FDS8984 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，7A，23mΩ;
| 型号： | FDS8984 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，7A，23mΩ PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
30 V
23 mW @ V = 10 V
7.0 A
6.0 A
GS
30 V, 7 A, 23 mW
30 mW @ V = 4.5 V
GS
FDS8984, FDS8984-F40
D2
D2
D1
D1
General Description
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of dc−dc converters using either
synchronous or conventional switching PWM controllers. It has been
G2
S2
G1
S1
Pin 1
optimized for low gate charge, low R
and fast switching speed.
DS(ON)
SOIC8
CASE 751EB
Features
• Max R
• Max R
= 23 mW @ V = 10 V, I = 7 A
GS D
DS(ON)
= 30 mW @ V = 4.5 V, I = 6 A
DS(ON)
GS
D
MARKING DIAGRAM
• Low Gate Charge
• 100% R Tested
• This Device is Pb−Free and Halogen Free
G
FDS8984
ALYW
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
Unit
V
FDS8984
A
L
YW
= Specific Device Code
= Assembly Site
= Wafer Lot Number
= Assembly Start Week
V
DS
V
GS
30
20
V
I
D
Drain Current
− Continuous (Note 1a)
− Pulsed
7
A
30
E
Single Pulse Avalache Energy (Note 2)
Power Dissipation for Single Operation
Derate Above 25°C
32
1.6
mJ
W
AS
PIN ASSIGNMENT
P
D
13
mW/°C
°C
5
6
7
8
4
3
2
1
T , T
Operating and Storage Temperature
−55 to +150
J
STG
Q2
Q1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
N−Channel MOSFET
RqJA
Thermal Resistance, Junction−to−Ambient
78
°C/W
(Note 1a)
RqJC
Thermal Resistance, Junction−to−Case
(Note 1)
40
°C/W
ORDERING INFORMATION
†
Device
Package
Shipping
FDS8984
SOIC8
2500 /
(Pb−Free)
Tape & Reel
FDS8984−F40
SOIC8
2500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2022 − Rev. 3
FDS8984/D
FDS8984, FDS8984−F40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
23
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
= 24 V, V = 0 V
−
−
−
−
1
250
mA
DSS
GS
= 24 V, V = 0 V, T = 125°C
GS
J
I
Gate to Source Leakage Current
V
GS
=
20 V, V = 0 V
−
−
100
nA
GSS
DS
ON CHARACTERISTICS (Note 3)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.2
1.7
2.5
V
GS(th)
DS
GS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−4.3
−
mV/°C
DVGS(th)
DTJ
D
R
Drain to Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 7 A
−
−
−
19
24
26
23
30
32
mW
DS(on)
D
= 4.5 V, I = 6 A
D
= 10 V, I = 7 A, T = 125°C
D
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V,
−
−
−
−
475
100
65
635
135
100
1.6
pF
pF
pF
W
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1.0 MHz
0.9
G
SWITCHING CHARACTERISTICS (Note 3)
t
Turn–On Delay Time
Rise Time
V
V
= 15 V, I = 7 A,
−
−
−
−
−
−
−
−
5
10
18
68
34
13
7
ns
ns
d(on)
DD
GS
D
= 10 V, R = 33 W
GS
t
r
9
t
Turn–Off Delay Time
Fall Time
42
21
9.2
5.0
1.5
2.0
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
= 15 V, V = 10 V, I = 7 A
nC
nC
nC
nC
g
g
DS
GS
D
= 15 V, V = 5 V, I = 7 A
DS
GS
D
Q
−
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
= 7 A
−
−
−
−
0.9
0.8
−
1.25
1.0
33
V
V
SD
SD
= 2.1 A
SD
t
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I = 7 A, d / = 100 A/ms
F
ns
nC
rr
i dt
Q
−
20
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 78°C/W when
mounted on a 0.5 in
pad of 2 oz copper
b. 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
c. 135°C/W when
mounted on
a minimum pad.
2
2
Scale 1 : 1 on letter size paper
2. Starting T = 25°C, L = 1 mH, I = 8 A, V = 27 V, V = 10 V.
J
AS
DD
GS
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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2
FDS8984, FDS8984−F40
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
3.0
30
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
V
= 10.0 V
= 5.0 V
GS
V
= 3.5 V
= 3.0 V
GS
V
= 3.0 V
GS
GS
2.5
2.0
1.5
V
= 4.5 V
V
= 4.5 V
= 10 V
GS
GS
V
= 3.5 V
GS
V
= 4.0 V
GS
V
GS
V
V
= 4.0 V
= 5.0 V
GS
10
0
1.0
0.5
V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
5
10
15
20
25
30
0.0
0.5
1.0
1.5 2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. On−Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
60
55
50
45
40
35
30
25
20
15
I
V
= 7 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 7 A
D
= 10 V
GS
1.2
1.0
0.8
0.6
T = 125°C
J
T = 25°C
J
−80
−40
0
40
80
120
160
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
30
10
30
25
20
15
10
5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DD
= 5 V
T = 150°C
J
1
0.1
T = 25°C
J
T = 25°C
J
T = 150°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Forward Voltage
vs. Source Current
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3
FDS8984, FDS8984−F40
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
700
10
8
V
= 10 V
DD
600
500
400
300
200
100
0
C
ISS
f = 1 MHz
= 0 V
V
GS
6
V
= 15 V
DD
4
C
OSS
V
DD
= 20 V
2
C
RSS
0
0
2
4
6
8
10
0.1
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source
Voltage
20
10
8
7
6
5
4
3
2
1
0
V
GS
= 10 V
STARTING T = 25°C
J
V
GS
= 4.5 V
STARTING T = 125°C
J
1
0.01
0.1
1
10 20
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , AMBIENT TEMPERATURE (°C)
A
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Ambient Temperature
100
10
3000
1000
T
A
= 25°C
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
10 ms
100 ms
150 * TA
Ǹ
100
10
1
I + I25ƪ ƫ
1 ms
1
125
V
= 10 V
GS
10 ms
100 ms
1 s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
0.1
0.01
DC
SINGLE PULSE
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25°C
0.1
1
10
100
−5
−4
−3
−2
−1
0
1
2
3
10
10
10
10
10
10
10
10
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDS8984, FDS8984−F40
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
t
1
t
2
SINGLE PULSE
1E−3
DUTY FACTOR: D = t /t
1
2
PEAK T = P
× Z
× R + T
q
JA JA A
q
J
DM
1E−4
−5
−4
−3
−2
−1
0
1
2
3
10
10
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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