FFSB0665B [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L;型号: | FFSB0665B |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L 二极管 |
文件: | 总6页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
6ꢀA, 650 V, D2, D2PAK-2L
V
I
F
RRM
650 V
6.0 A
FFSB0665B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1., 3. Cathode
2. Anode
Schottky Diode
3
1
2
Features
2
D PAK2 (TO−263−2L)
• Max Junction Temperature 175°C
• Avalanche Rated 24.5 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
CASE 418BK
MARKING DIAGRAM
• No Reverse Recovery / No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
FFSB
0665B
AYWWZZ
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
FFSB0665B
A
= Specific Device Code
= Assembly Site
YWW
ZZ
= Date Code (Year & Week)
= Lot Code
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
650
Unit
V
Peak Repetitive Reverse Voltage
V
RRM
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Single Pulse Avalanche Energy (T = 25°C,
L(pk)
E
AS
24.5
mJ
J
I
= 9.9 A, L = 0.5 mH, V = 50 V)
Continuous Rectified Forward
Current
@ T < 150
I
6.0
8.0
523
A
A
C
F
@ T < 135
C
Non−Repetitive Peak Forward
Surge Current
T
P
= 25°C
= 10 ms
I
FM
C
t
T
= 150°C
= 10 ms
467
45
C
P
t
Non−Repetitive Forward Surge
Current (Half−Sine Pulse)
T
= 25°C
I
A
C
FSM
t
P
= 8.3 ms
Power Dissipation
T
= 25°C
P
tot
61
10
W
C
T
C
= 150°C
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 2
FFSB0665B/D
FFSB0665B
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case, Max.
Symbol
Value
Unit
R
2.46
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
ON CHARACTERISTICS
Forward Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
V
F
I = 6.0 A, T = 25°C
1.38
1.53
1.67
0.5
1.7
2.0
2.4
40
V
F
J
I = 6.0 A, T = 125°C
F
J
I = 6.0 A, T = 175°C
F
J
Reverse Current
I
R
V
= 650 V, T = 25°C
mA
R
J
V
= 650 V, T = 125°C
1.0
80
R
R
J
V
= 650 V, T = 175°C
2.0
160
J
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Capacitive Charge
Q
V
= 400 V
16
259
29
nC
pF
C
C
C
V = 1 V, f = 100 kHz
R
tot
V
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
R
V
22
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
2
D PAK2
†
FFSB0665B
FFSB0665B
Tape & Reel
330 mm
24 mm
800 Units
(TO−263−2L)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FFSB0665B
TYPICAL CHARACTERISTICS
10−6
12
9
T = −55oC
J
T = 25o C
J
T = 75o C
J
T = 175oC
10−7
10−8
10−9
J
T = 125oC
J
T = 175oC
J
6
T = 125oC
J
T = 75o C
J
3
T = 25oC
J
T = −55oC
J
0
0.0
0
100
200
300
400
500
600 650
0.5
1.0
1.5
2.0
2.5
3.0
V , FORWARD VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
80
60
40
20
0
80
60
40
20
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
C)
175
T , CASE TEMPERATURE ( oC)
T , CASE TEMPERATURE (o
C
C
Figure 3. Current Derating
Figure 4. Power Derating
25
20
15
10
5
1000
100
10
0
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V
, REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSB0665B
TYPICAL CHARACTERISTICS
6
4
2
0
0
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
0.1
0.01
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
SINGLE PULSE
0.001
10−6
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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