FFSB10120A-F085 [ONSEMI]
汽车碳化硅 (SiC) 肖特基二极管，1200V;
| 型号： | FFSB10120A-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 汽车碳化硅 (SiC) 肖特基二极管，1200V 功效 测试 光电二极管 肖特基二极管 |
| 文件： | 总6页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 1200 V, D1, D2PAK-2L
Cathode
Anode
Schottky Diode
FFSB10120A-F085
Cathode
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Cathode
Anode
2
D PAK2 (TO−263−2L)
CASE 418BK
MARKING DIAGRAM
Features
AYWWZZ
FFSB
10120A
Max Junction Temperature 175C
Avalanche Rated 100 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AEC−Q101 qualified
A
YWW
ZZ
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
Applications
FFSB10120A = Specific Device Code
Automotive HEV−EV Onboard Chargers
Automotive HEV−EV DC−DC Converters
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
February, 2023 − Rev. 3
FFSB10120A−F085/D
FFSB10120A−F085
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Ratings
Unit
V
V
RRM
1200
Peak Repetitive Reverse Voltage
mJ
A
E
100
Single Pulse Avalanche Energy (Note 1)
AS
I
10
Continuous Rectified Forward Current @ T < 164C
F
C
21
Continuous Rectified Forward Current @ T < 135C
C
A
T
T
= 25C, 10 ms
= 150C, 10 ms
I
850
Non−Repetitive Peak Forward Surge Current
C
F, Max
800
C
A
A
Half−Sine Pulse, tp = 8.3 ms
Half−Sine Pulse, tp = 8.3 ms
I
90
Non−Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
F, SM
I
35
283
F, RM
W
T
= 25C
Ptot
C
C
W
T
= 150C
47
C
Ncm
T , T
−55 to +175
60
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 100 mJ is based on starting T = 25C, L = 0.5 mH, I = 20 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
C/W
R
0.53
Thermal Resistance, Junction to Case, Max
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Conditions
I = 10 A, T = 25C
Min
−
Typ.
1.45
1.7
2
Max.
1.75
2
Unit
V
F
V
F
C
I = 10 A, T = 125C
−
F
C
I = 10 A, T = 175C
−
2.4
200
300
400
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25C
−
−
mA
C
= 1200 V, T = 125C
−
−
C
= 1200 V, T = 175C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
62
612
58
47
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Mark
Package
D PAK2 (TO−263−2L)
Shipping
2
FFSB10120A−F085
FFSB10120A
800 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FFSB10120A−F085
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
C
1
10
8
10
T = −55C
J
T
J
T
J
= 25C
= 75C
0
10
6
4
−1
10
10
10
T
J
= 175C
T
T
= 125C
= 175C
J
J
T
J
= 75C
T
J
= 125C
−2
−3
2
0
T
J
= 25C
T = −55C
J
0
1
F
2
3
4
200
400
600
800
1000
1200
V , FORWARD VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
160
300
280
D = 0.1
120
80
240
120
60
D = 0.2
D = 0.3
D = 0.5
40
D = 0.7
D = 1
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
Figure 3. Current Derating
T , CASE TEMPERATURE (5C)
Figure 4. Power Derating
C
C
5000
1000
80
60
40
20
100
10
0
0
200
400
600
800
1000
0.1
1
10
100
1000
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitive Charge vs. Reverse Voltage
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3
FFSB10120A−F085
TYPICAL CHARACTERISTICS (T = 25C UNLESS OTHERWISE NOTED)
C
(CONTINUED)
30
20
10
0
0
200
400
600
800
1000
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE − DESCENDING ORDER
P
DM
0.1
0.5
0.2
0.1
t
1
0.0
1
t
0.05
2
0.02
0.01
NOTES:
(t) = r(t) R
Z
R
q
q
JC
JC
0.001
= 0.53C/W
q
JC
PEAK T = P
Duty cycle, D = t /t
Z
(t) + T
JC C
q
J
DM
SINGLE PULSE
1
2
0.0001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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