FFSH30120A [ONSEMI]
SiC 二极管，1200V，30A，TO-247-2;
| 型号： | FFSH30120A |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，1200V，30A，TO-247-2 局域网 功效 测试 光电二极管 |
| 文件： | 总7页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
30 A, 1200 V, D1, TO-247-2L
1. Cathode
2. Anode
Schottky Diode
FFSH30120A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
TO−247−2LD
CASE 340CL
MARKING DIAGRAM
Features
• Max Junction Temperature 175°C
• Avalanche Rated 361 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
AYWWZZ
FFSH
30120A
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
A
YWW
ZZ
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Code
FFSH30120A
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
January, 2023 − Rev. 3
FFSH30120A/D
FFSH30120A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
1200
361
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 155°C
E
AS
mJ
A
I
F
30
C
Continuous Rectified Forward Current @ T < 135°C
46
C
I
Non-Repetitive Peak Forward Surge Current
1500
1400
230
A
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half-Sine Pulse, t = 8.3 ms
A
F,SM
p
I
Half-Sine Pulse, t = 8.3 ms
80
A
F,RM
p
Ptot
T
= 25°C
500
W
C
C
T
= 150°C
83
W
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
Ncm
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 361 mJ is based on starting T = 25°C, L = 0.5 mH, I = 38 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.3
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 30 A, T = 25°C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 30 A, T = 125°C
−
F
C
I = 30 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25°C
−
mA
C
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
175
1740
159
130
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSH30120A
FFSH30120A
TO−247−2LD
(Pb-Free)
30 Units / Tube
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2
FFSH30120A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
−4
10
30
25
T
J
= −55°C
J
−5
10
T
T
= 25°C
= 75°C
T
= 175°C
J
20
15
10
J
T
= 125°C
J
−6
T
= 175°C
J
10
10
T
= 75°C
J
T
= 125°C
J
T
= 25°C
J
−7
−8
10
10
T
= −55°C
J
5
0
−9
0.0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
800
1000
1200
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
400
300
600
500
400
300
200
D = 0.1
D = 0.2
D = 0.3
D = 0.5
200
100
0
D = 0.7
100
0
D = 1
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
C
T , CASE TEMPERATURE (5C)
C
Figure 3. Current Derating
Figure 4. Power Derating
10000
200
160
120
80
1000
100
10
40
0
0.1
1
10
100
800
0
200
400
600
800
V , REVERSE VOLTAGE (V)
R
VR, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
www.onsemi.com
3
FFSH30120A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
60
50
40
30
20
10
0
0
200
400
600
800
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE − DESCENDING ORDER
−1
−2
−3
10
10
10
10
P
DM
D=0.5
t
1
D=0.2
D=0.1
D=0.05
D=0.02
t
2
NOTES
(t) = r(t) x R
Z
R
q
q
JC
JC
D=0.01
= 0.3 °C/W
q
JC
Peak T = P
Duty cycle, D = t
x Z (t) + T
qJC
C
SINGLE
PULSE
J
DM
t
1 /
2
−4
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction-to-Case Transient Thermal Response Curve
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4
FFSH30120A
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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