FGA30N120FTDTU [ONSEMI]
IGBT，1200V，30A，场截止沟槽;
| 型号： | FGA30N120FTDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，30A，场截止沟槽 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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April 2013
FGA30N120FTD
1200 V, 30 A Field Stop Trench IGBT
Features
•
•
•
•
Field Stop Trench Technology
General Description
High Speed Switching
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 30 A
High Input Impedance
Applications
•
Solar Inverter, UPS, Welder, PFC
C
G
TO-3P
E
G
C
E
Absolute Maximum Ratings
Symbol
Description
Ratings
1200
± 25
60
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
@ TC = 25oC
@ TC = 100oC
IC
Collector Current
30
@ TC = 25oC
ICM (1)
IF
Pulsed Collector Current
90
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
30
A
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
339
W
W
oC
oC
PD
132
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Typ.
Max.
0.38
1.2
Unit
oC/W
oC/W
-
-
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
1
www.fairchildsemi.com
RθJA
Thermal Resistance, Junction to Ambient
-
40
oC/W
Package Marking and Ordering Informa-
tion
Packaging
Type
Device Marking
Device
Package
Eco Status
Qty per Tube
FGA30N120FTD
FGA30N120FTDTU
TO-3PN
RoHS
Tube
30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA
1200
-
-
-
-
1
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
mA
nA
IGES
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
3.5
-
6
7.5
2
V
V
1.6
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 30A, VGE = 15V,
TC = 125oC
-
2.0
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
5140
150
95
-
-
-
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31
101
198
259
0.54
1.16
1.70
40
-
ns
ns
Rise Time
-
Turn-Off Delay Time
Fall Time
-
ns
V
CC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
-
ns
Resistive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
-
mJ
mJ
mJ
ns
1.51
-
-
-
-
-
-
-
-
-
-
-
127
211
364
0.74
1.63
2.37
208
41
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
ns
V
CC = 600V, IC = 30A,
RG = 10Ω, VGE = 15V,
ns
Resistive Load, TC = 125oC
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
V
CE = 600V, IC = 30A,
Qge
Qgc
VGE = 15V
97
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
2
www.fairchildsemi.com
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.3
Max
Unit
TC = 25oC
-
-
-
-
-
-
-
-
1.7
VFM
Diode Forward Voltage
IF = 30A
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
1.3
-
-
-
-
-
-
-
730
775
43
trr
Diode Reverse Recovery Time
ns
A
IF =30A,
di/dt = 200A/μs
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
47
5.9
Qrr
μC
18.2
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
TC = 25oC
20V
TC = 125oC
20V
150
150
15V
17V
17V
15V
120
90
60
30
0
120
12V
90
60
30
0
12V
10V
10V
9V
9V
VGE = 8V
VGE = 8V
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
100
TC = 125oC
80
80
60
40
20
0
60
40
20
0
0
2
4
6
0
5
10
15
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
60A
30A
60A
4
IC = 10A
30A
IC = 15A
0
25
50
75
100
125
0
4
8
12
16
20
o
Collector-EmitterCase Temperature, TC [ C]
Gate-Emitter Voltage, VGE [V]
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
8000
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
16
12
8
6000
4000
2000
0
Coes
60A
12
4
30A
Cres
IC = 15A
0
0
4
8
16
20
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
200
100
Common Emitter
TC = 25oC
10μs
12
100μs
1ms
600V
VCC = 200V
10
400V
10 ms
9
DC
1
0.1
6
3
0
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
50
100
150
200
250
1
10
100
1000 3000
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
500
2000
1000
td(off)
100
tr
tf
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
VCC = 600V, VGE = 15V
td(on)
IC = 30A
IC = 30A
100
50
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
1000
1200
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VGE = 15V, RG = 10Ω
1000
TC = 25oC
TC = 25oC
TC = 125oC
TC = 125oC
tr
tf
100
td(on)
10
td(off)
100
10
10
20
30
40
50
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
10
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Eoff
Eoff
1
1
Eon
Common Emitter
VCC = 600V, VGE = 15V
Eon
IC = 30A
TC = 25oC
TC = 125oC
0.1
10
0.1
20
30
40
50
0
20
40
60
80
100
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
100
10
TJ = 125oC
10
TJ = 25oC
1
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 125oC
0.1
0.0
1
0.5
1.0
1.5
2000
1000
1
10
100
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Current
Figure 20. Stored Charge
20
50
18
16
200A/μs
40
200A/μs
14
di/dt = 100A/μs
12
10
8
30
di/dt = 100A/μs
6
10
20
10
20
30
40
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
1000
di/dt = 100A/μs
800
200A/μs
600
400
10
20
30
40
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
PDM
t1
t2
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
7
www.fairchildsemi.com
Mechanical Dimensions
TO-3PN
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
8
www.fairchildsemi.com
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Sync-Lock™
®*
®
®
®
®
PowerTrench
PowerXS™
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™
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®
®
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
FGH30N120FTD Rev. C0
9
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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