FGA30S120P [ONSEMI]
1300V, 30A,短路阳极 IGBT;型号: | FGA30S120P |
厂家: | ONSEMI |
描述: | 1300V, 30A,短路阳极 IGBT 局域网 PC 栅 双极性晶体管 功率控制 |
文件: | 总9页 (文件大小:375K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2016 年 5 月
FGA30S120P
1300 V、 30 A 阳极短路 IGBT
特性
概述
•
•
•
•
高速开关
飞兆半导体的阳极短路沟道 IGBT 采用先进的场截止沟道和阳极
短路技术,为软开关应用提供卓越的导通和开关性能。该器件可
并联配置,具有极佳的雪崩能力。该器件为感应加热和微波炉而
设计。
低饱和电压:VCE(sat) =1.75 V @ IC=30 A
高输入阻抗
符合 RoHS 标准
应用
•
感应加热,微波炉
C
G
TO-3PN
E
G
C
E
绝对最大额定值
T
= 25°C 除非另有说明
C
符号
说明
额定值
1300
±25
单位
VCES
VGES
V
V
A
A
集电极 - 发射极之间电压
栅极-发射极间电压
集电极电流
@ TC = 25°C
@ TC = 100°C
60
IC
30
集电极电流
ICM (1)
集电极脉冲电流
150
60
A
A
IF
IF
二极管正向连续电流
@ TC = 25°C
30
348
A
二极管正向连续电流
最大功耗
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
W
W
°C
°C
PD
174
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
Tstg
存储温度范围
用于焊接
TL
300
°C
的最大引脚温度,距离外壳 1/8",持续 5 秒
热性能
符号
RJC(IGBT)
RJA
参数
结点 - 壳体的热阻
典型值
最大值
0.43
单位
°C/W
°C/W
--
--
40
结至环境热阻
注意:
1: 受限于最大结温
©2011 飞兆半导体公司
1
www.fairchildsemi.com
FGA30S120P Rev. 1.10
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGA30S120P
FGA30S120P
TO-3P
30
塑料管
不适用
不适用
IGBT 电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
1300
-
-
-
-
V
BVCES
TJ
/
V/oC
VGE = 0 V, IC = 1mA
1.3
Voltage
ICES
IGES
VCE = 1300, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
1
mA
nA
集电极切断电流
±500
G-E 漏电流
导通特性
VGE(th)
IC = 30 mA, VCE = VGE
4.5
-
6.0
7.5
2.3
V
V
G-E 阈值电压
IC = 30 A, VGE = 15 V
TC = 25°C
1.75
VCE(sat)
集电极 - 发射极间饱和电压
IC = 30 A, VGE = 15 V,
-
-
1.85
1.9
-
V
V
T
C = 125°C
C = 30 A, VGE = 15 V,
C = 175°C
I
T
-
IF = 30 A, TC = 25°C
IF = 30 A, TC = 175°C
-
-
1.7
2.1
2.2
-
V
V
VFM
二极管正向电压
动态特性
Cies
-
-
-
3345
75
-
-
-
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
60
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
39
360
620
160
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
ns
关断延迟时间
下降时间
VCC = 600 V, IC = 30 A,
R
G = 10 , VGE = 15 V,
ns
感性负载 , TC =25°C
Eon
Eoff
Ets
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
1.22
2.52
38
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
375
635
270
1.59
1.78
3.37
78
ns
ns
关断延迟时间
下降时间
VCC = 600 V, IC = 30 A,
R
G = 10 , VGE = 15 V,
ns
电阻性负载, TC =175°C
Eon
Eoff
Ets
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
V
V
CE = 600 V, IC = 30 A,
GE = 15 V
Qge
Qgc
4.2
栅极-发射极间电荷
栅极-集电极间电荷
33.3
©2011 飞兆半导体公司
2
www.fairchildsemi.com
FGA30S120P Rev. 1.10
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
200
200
TC = 175oC
TC = 25oC
20V
20V 15V
12V
15V
12V
160
160
VGE = 17V
VGE = 17V
10V
9V
120
80
40
0
120
80
40
0
10V
9V
8V
7V
8V
7V
0.0
2.0
4.0
6.0
8.0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 传输特性
200
200
Common Emitter
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
VCE = 20V
TC = 25oC
TC = 175oC
160
120
80
160
120
80
40
0
40
0
0.0
3.0
6.0
9.0
12.0
15.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与壳温的关系 (不同电流强度下)
图 6. 饱和电压与 VGE 的关系
3.5
20
Common Emitter
Common Emitter
TC = 25oC
VGE = 15V
3.0
16
12
60A
2.5
30A
2.0
8
60A
IC = 15A
30A
4
1.5
IC = 15A
0
1.0
25
50
75
100
125
150
175
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2011 飞兆半导体公司
3
www.fairchildsemi.com
FGA30S120P Rev. 1.10
典型性能特征
图 7. 饱和电压与 VGE 的关系
图 8. 电容特性
20
10000
Common Emitter
o
C
ies
T
= 175 C
C
16
12
1000
100
C
8
oes
30A
C
res
60A
Common Emitter
4
V
= 0V, f = 1MHz
o
GE
I
C
= 15A
T
= 25 C
C
0
10
30
4
8
12
16
20
1
10
Collector-Emitter Voltage, VCE [V]
20
Gate-Emitter Voltage, VGE [V]
图 9. 栅极电荷特性
图 10. SOA 特性
15
Common Emitter
TC = 25oC
100
400V
10s
600V
12
100s
1ms
10ms
DC
VCC = 200V
10
1
9
6
3
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0
0
0.01
0.1
1
10
100
1000
30
60
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻的关系
10000
500
Common Emitter
VCC = 600V, VGE = 15V
IC = 30A
t
r
TC = 25oC
TC = 175oC
td(off)
100
1000
Common Emitter
V
= 600V, V = 15V
GE
CC
I
= 30A
t
C
d(on)
tf
o
T
= 25 C
C
o
T
C
= 175 C
20
100
0
10
20
30
40
50
60
70
10
20
30
40
50
60
70
Gate Resistance, RG []
Gate Resistance, RG []
©2011 飞兆半导体公司
4
www.fairchildsemi.com
FGA30S120P Rev. 1.10
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
2500
2500
Common Emitter
Common Emitter
V
= 15V, R = 10
V
= 15V, R = 10
GE
G
GE
G
1000
100
10
o
o
T
= 25 C
T
= 25 C
t
C
C
r
o
o
1000
T
= 175 C
T
= 175 C
C
C
t
d(off)
t
f
t
d(on)
100
20
40
60
20
40
60
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
图 16. 开关损耗与集电极电流的关系
10
30k
Common Emitter
Common Emitter
VCC = 600V, VGE = 15V
V
T
T
= 15V, R = 10
GE
G
o
10k
IC = 30A
= 25 C
C
C
TC = 25oC
TC = 175oC
o
= 175 C
1k
E
Eoff
}
on
E
off
{
{
1
E
on
{
100
0.5
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
80
Collector Current, IC [A]
Gate Resistance, RG []
图 17. 关断开关 SOA 特性
图 18. 正向特性
80
100
TJ = 25oC
10
10
TJ = 175oC
Safe Operating Area
VGE = 15V, TC = 175oC
TC = 25oC
1
TC = 175oC
1
0.5
0
1
10
100
1000
1
2
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2011 飞兆半导体公司
5
www.fairchildsemi.com
FGA30S120P Rev. 1.10
图 19.IGBT 的瞬态热阻抗
1
0.1
0.5
0.2
0.1
0.05
0.02
PDM
0.01
single pulse
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2011 飞兆半导体公司
6
www.fairchildsemi.com
FGA30S120P Rev. 1.10
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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