FGA30N65SMD [ONSEMI]
IGBT，650V，30A，场截止;
| 型号： | FGA30N65SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，30A，场截止 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2013 年 12 月
FGA30N65SMD
650 V、 30 A 场截止 IGBT
特性
概述
•
•
•
•
•
•
•
•
最大结温：TJ =175oC
正温度系数，易于并联运行
高电流能力
飞兆半导体的新型场截止第二代 IGBT 系列产品采用创新型场截
止 IGBT 技术，为光伏逆变器、UPS、焊 机 和 PFC 等低导通和开
关损耗至关重要的应用提供最佳性能。
低饱和电压：VCE(sat) =1.98 V(Typ.)@ IC = 30 A
高输入阻抗
快速开关
紧密的参数分布
符合 RoHS 标准
应用
•
太阳能逆变器
•
UPS、电焊机、 SMPS
C
G
TO-3P
G C E
E
绝对最大额定值
符号
说明
额定值
单位
V
VCES
VGES
650
集电极－发射极之间电压
20
V
栅极－发射极间电压
集电极电流
@ TC = 25oC
@ TC = 100oC
60
A
IC
30
A
集电极电流
ICM (1)
IF
IFM (1)
PD
90
40
A
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25oC
@ TC = 100oC
A
20
A
120
A
@ TC = 25oC
@ TC = 100oC
300
W
W
oC
oC
oC
150
最大功耗
TJ
-55 至 +175
-55 至 +175
300
工作结温
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
注意：
1: 重复额定值：脉宽受最大结温限制
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
热性能
符号
RJC(IGBT)
RJC(Diode)
RJA
参数
最大值
0.5
单位
oC/W
oC/W
oC/W
结至外壳热阻最大值
结至外壳热阻最大值
结至环境热阻最大值
1.5
40
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGA30N65SMD
FGA30N65SMD
TO-3P
塑料管
不适用
不适用
30
IGBT 电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 250 A
GE = 0 V, IC = 250 A
650
-
-
-
-
V
集电极－发射极击穿电压
击穿温度系数电压
BVCES
TJ
V/oC
V
0.29
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
A
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 A, VCE = VGE
3.5
-
4.8
6.0
2.5
V
V
G-E 阈值电压
I
C = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V,
C = 175oC
1.98
VCE(sat)
集电极－发射极间饱和电压
-
2.29
-
V
T
动态特性
Cies
-
-
-
1350
130
45
-
-
-
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
导通延迟时间
上升时间
td(off)
tf
102
10
关断延迟时间
下降时间
VCC = 400 V, IC = 30 A,
R
G = 6 , VGE = 15 V,
感性负载， TC = 25oC
Eon
Eoff
Ets
716
208
924
13
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
td(on)
tr
td(off)
tf
28
108
17
关断延迟时间
下降时间
VCC = 400 V, IC = 30 A,
R
G = 6 , VGE = 15 V,
感性负载， TC = 175oC
Eon
Eoff
Ets
1125
572
1697
导通开关损耗
关断开关损耗
总开关损耗
©2013 飞兆半导体公司
2
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FGA30N65SMD Rev. C2
IGBT 电气特性（续）
符号 参数
测试条件
最小值 典型值 最大值 单位
Qg
-
-
-
87
9.1
45
-
-
-
nC
nC
nC
总栅极电荷
VCE = 400 V, IC = 30 A,
GE = 15 V
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
V
二极管电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25oC
TC = 175oC
-
-
-
-
-
-
-
2.1
1.83
55
2.7
VFM
IF = 20 A
V
二极管正向电压
-
-
-
-
-
-
Erec
trr
T
C = 175oC
C = 25oC
uJ
ns
反向恢复电能
T
35
二极管反向恢复时间
IF =20 A, diF/dt = 200 A/s
TC = 175oC
TC = 25oC
TC = 175oC
182
59
Qrr
nC
二极管反向恢复电荷
587
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
90
90
20V
15V
TC = 175oC
TC = 25oC
20V
15V
12V
12V
75
60
45
30
15
0
75
60
45
30
15
0
10V
10V
VGE = 8V
VGE = 8V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 饱和电压与可变电流强度下壳温的关系
4.0
90
Common Emitter
Common Emitter
VGE = 15V
VGE = 15V
TC = 25oC
3.5
75
60A
TC = 175oC
3.0
60
2.5
45
30
15
0
30A
2.0
IC = 15A
1.5
1.0
25
50
75
100
125
150
175
0.0
1.0
2.0
3.0
4.0
5.0
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
20
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
8
15
30A
IC = 30A
60A
60A
IC = 15A
10
5
15A
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
15
10000
Common Emitter
TC = 25oC
12
200V
Cies
VCC = 100V
300V
1000
100
9
6
3
0
Coes
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
20
0
25
50
75
100
5
10
15
20
25
30
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
图 9. 关断特性与栅极电阻的关系
图 10. 导通特性与栅极电阻的关系
1000
100
td(off)
tr
100
tf
td(on)
Common Emitter
10
Common Emitter
VCC = 400V, VGE = 15V
10
3
VCC = 400V, VGE = 15V
IC = 30A
IC = 30A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
1
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
500
10000
Eon
100
tr
1000
td(on)
Eoff
Common Emitter
VCC = 400V, VGE = 15V
10
100
10
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
IC = 30A
TC = 25oC
TC = 175oC
1
10
20
30
40
50
60
70
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG []
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
500
10000
Eon
td(off)
100
1000
Eoff
tf
100
10
Common Emitter
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
10
1
1
10
20
30
40
50
60
70
80
10
20
30
40
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
100
350
10s
VCC = 400V
load Current : peak of square wave
300
250
200
150
100
50
100s
10
1
1ms
10ms
DC
TC = 75oC
TC = 25oC
TC = 100oC
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
Duty cycle : 50%
TC = 100oC
3. Single Pulse
0.01
Powe Dissipation = 149 W
0
1k
1
10
100
1000
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. 正向特性
图 18. 反向电流
8
60
TJ = 175oC
TJ = 25oC
6
10
1
di/dt = 200A/s
TJ = 100oC
4
2
0
di/dt = 100A/s
TC = 25oC
TC = 175oC
0.1
5
10
15
20
25
30
35
40
0
1
2
3
4
Forward Current, IF [A]
Forward Voltage, VF [V]
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
典型性能特征
图 19. 反射恢复时间
图 20. 存储电荷
300
800
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
250
600
200
150
400
di/dt =200A/s
di/dt =100A/s
100
50
0
di/dt = 200A/s
di/dt = 100A/s
200
0
5
10
15
20
25
30
35
40
5
10
15
20
25
30
35
40
Forward Current, IF [A]
Forwad Current, IF [A]
图 21. IGBT 的瞬态热阻
1
0.5
0.2
0.1
0.1
0.05
0.02
PDM
t1
t2
0.01
0.01
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.003
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
2
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2013 飞兆半导体公司
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FGA30N65SMD Rev. C2
机械尺寸
图 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
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FGA30N65SMD Rev. C2
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66
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FGA30N65SMD Rev. C2
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