FGA4060ADF_技术文档

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July 2015

FGA4060ADF

600 V, 40 A Field Stop Trench IGBT

Features

General Description

•

Maximum Junction Temperature : T_J= 175^oC

Positive Temperaure Co-efficient for Easy Parallel Operating

High Current Capability

This ADF IGBT series adopted Field Stop Trench 3rd genera-

tion IGBT which offer extreme low Vce(sat) and much faster

switching characteristics for outstanding efficiency. And this kind

of technology is fully optimized to variety PFC (Power Factor

Correction) topology ; Single boost, Multi channel interleaved

etc with over 20KHz switching performance. TO3P package

provide Super Low thermal resistance for much wider SOA for

system stability.

Low Saturation Voltage: V_CE(sat)= 1.8 V(Typ.) @ I_C= 40 A

100% of the Parts Tested for I_LM(1)

High Input Impedance

Fast Switching

Tighten Parameter Distribution

Applications

RoHS Compliant

•

PFC topology for Home appliance : Single Boost , Multi chan-

nel Interleaved etc.

C

G

C

TO-3PN

E

Absolute Maximum Ratings

T

= 25°C unless otherwise noted

C

Symbol

Description

FGA4060ADF

Unit

V

V_CES

Collector to Emitter Voltage

600

Gate to Emitter Voltage

 20

V

V_GES

Transient Gate to Emitter Voltage

Collector Current

 30

V

@ T_C= 25^oC

@ T_C= 100^oC

@ T_C= 25^oC

80

A

I_C

Collector Current

40

A

I_{LM (1)}

I_{CM (2)}

Pulsed Collector Current

Diode Forward Current

120

A

120

A

@ T_C= 25^oC

@ T_C= 100^oC

3

1.5

A

I_{F (3)}

Diode Forward Current

A

I_{FM (2)}

P_D

Pulsed Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

6

A

@ T_C= 25^oC

@ T_C= 100^oC

238

W

^oC

119

T_J

-55 to +175

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Notes:

1. V = 400 V, V = 15 V, I =120 A, R = 120  Inductive Load.

CC

GE

C

G

2. Repetitive rating: Pulse width limited by max. junction temperature.

3. The purpose of diode is protection for negative voltage.

FGA4060ADF Rev. 1.0

1

www.fairchildsemi.com

Thermal Characteristics

Symbol

Parameter

FGA4060ADF

Unit

^oC/W

R_JC(IGBT)

R_JC(Diode)

R_JA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

0.63

5

40

Package Marking and Ordering Information

Part Number

Top Mark

Package Packing Method Reel Size

Tape Width Qty per Tube

FGA4060ADF

TO-3PN

Tube

-

30

Electrical Characteristics of the IGBT

T

= 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Off Characteristics

BV_CES

Collector to Emitter Breakdown Voltage V_GE= 0V, I_C= 1 mA

Temperature Coefficient of Breakdown

600

-

V

BV_CES

T_J

/

V/^oC

I

_C= 1 mA, Reference to 25^oC

0.6

Voltage

I_CES

I_GES

Collector Cut-Off Current

G-E Leakage Current

V_CE= V_CES, V_GE= 0 V

V_GE= V_GES, V_CE= 0 V

-

250

A

±400

nA

On Characteristics

V_GE(th)

G-E Threshold Voltage

I_C= 40 mA, V_CE= V_GE

I_C= 40 A, V_GE= 15 V

I_C= 40 A, V_GE= 15 V,

4.1

-

5.6

1.8

7.6

2.3

V

V_CE(sat)

Collector to Emitter Saturation Voltage

-

2.31

-

V

T

_C= 175^oC

Dynamic Characteristics

C_ies

C_oes

C_res

Input Capacitance

-

1525

60

-

pF

V

_CE= 30 V V_GE= 0 V,

,

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

20

Switching Characteristics

t_d(on)Turn-On Delay Time

t_r

t_d(off)

t_f

-

16.8

34.4

54.4

10

-

ns

Rise Time

Turn-Off Delay Time

Fall Time

ns

V_CC= 400 V, I_C= 40 A,

R

_G= 6 , V_GE= 15 V,

ns

Inductive Load, T_C= 25^oC

E_on

E_off

E_ts

t_d(on)

t_r

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

1.37

0.25

1.62

16

mJ

ns

35.2

57.6

12.8

1.89

0.47

2.36

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

ns

V_CC= 400 V, I_C= 40 A,

R

_G= 6 , V_GE= 15 V,

ns

Inductive Load, T_C= 175^oC

E_on

E_off

E_ts

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

mJ

FGA4060ADF Rev. 1.0

2

www.fairchildsemi.com

Electrical Characteristics of the IGBT (Continued)

Symbol

Q_g

Parameter

Test Conditions

Min.

Typ.

55.5

9.8

Max Unit

Total Gate Charge

-

nC

V

_CE= 400 V, I_C= 40 A,

_GE= 15 V

Q_ge

Gate to Emitter Charge

Gate to Collector Charge

Q_gc

21

Electrical Characteristics of the Diode

T = 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

Typ.

1.6

Max Unit

T

_C= 25^oC

_C= 175^oC

_C= 25^oC

_C= 175^oC

_C= 25^oC

-

2.3

V_FM

Diode Forward Voltage

I_F= 3 A

V

1.4

-

E_rec

t_rr

Reverse Recovery Energy

29.7

26

-

uJ

ns

Diode Reverse Recovery Time

I_F= 3 A, dI_F/dt = 200 A/s

T

153

35

Q_rr

Diode Reverse Recovery Charge

nC

T_C= 175^oC

305

FGA4060ADF Rev. 1.0

3

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. Typical Output Characteristics

Figure 2. Typical Output Characteristics

120

T_C= 25^oC

20V

T_C= 175^oC

20V

15V

12V

10V

90

60

30

0

15V

12V

10V

60

V_GE= 8V

30

0

1

2

3

4

5

0

1

2

3

4

5

Collector-Emitter Voltage, V_CE[V]

Figure 3. Typical Saturation Voltage

Characteristics

Figure 4. Saturation Voltage vs. Case

Temperature at Variant Current Level

4

3

2

1

120

Common Emitter

V_GE= 15V

Common Emitter

V_GE= 15V

T_C= 25^oC

T_C= 175^oC

90

80A

40A

60

30

0

I_C= 20A

-50

0

50

100

150

0

1

2

3

4

5

Case Temperature, T_C[^oC]

Collector-Emitter Voltage, V_CE[V]

Figure 5. Saturation Voltage vs. V

Figure 6. Saturation Voltage vs. V

GE

20

Common Emitter

T_C= 25^oC

Common Emitter

T_C= 175^oC

16

12

8

16

12

8

40A

80A

40A

80A

I_C= 20A

4

0

4

8

12

16

20

4

8

12

16

20

Gate-Emitter Voltage, V_GE[V]

FGA4060ADF Rev. 1.0

4

www.fairchildsemi.com

Typical Performance Characteristics

Figure 7. Capacitance Characteristics

Figure 8. Gate charge Characteristics

10000

15

Common Emitter

T_C= 25^oC

12

C_ies

300V

1000

V_CC= 200V

400V

9

6

3

0

C_oes

100

Common Emitter

V_GE= 0V, f = 1MHz

T_C= 25^oC

C_res

10

1

10

Collector-Emitter Voltage, V_CE[V]

0

10

20

30

40

50

60

30

50

Gate Charge, Q_g[nC]

Figure 9. Turn-on Characteristics vs.

Gate Resistance

Figure 10. Turn-off Characteristics vs.

Gate Resistance

1000

100

t_r

t_d(off)

100

t_f

t_d(on)

Common Emitter

V_CC= 400V, V_GE= 15V

Common Emitter

V_CC= 400V, V_GE= 15V

I_C= 40A

10

5

T_C= 25^oC

T_C= 175^oC

T_C= 25^oC

T_C= 175^oC

10

4

0

10

20

30

40

50

0

10

20

30

40

Gate Resistance, R_G[]

Figure 11. Switching Loss vs.

Figure 12. Turn-on Characteristics vs.

Gate Resistance

Collector Current

150

3

100

E_on

t_r

1

t_d(on)

E_off

Common Emitter

V_CC= 400V, V_GE= 15V

Common Emitter

V_GE= 15V, R_G= 6

T_C= 25^oC

T_C= 175^oC

I_C= 40A

10

T_C= 25^oC

T_C= 175^oC

5

20

0.1

30

40

50

60

70

80

0

10

20

30

40

Gate Resistance, R_G[]

Collector Current, I_C[A]

FGA4060ADF Rev. 1.0

5

www.fairchildsemi.com

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs.

Collector Current

Figure 14. Switching Loss vs.

Collector Current

10

100

t_d(off)

E_on

1

E_off

t_f

Common Emitter

10

V_GE= 15V, R_G= 6

T_C= 25^oC

T_C= 175^oC

V_GE= 15V, R_G= 6

T_C= 25^oC

T_C= 175^oC

0.1

0.05

4

20

30

40

50

60

70

80

30

40

50

60

70

80

Collector Current, I_C[A]

Figure 15. Load Current Vs. Frequency

Figure 16. SOA Characteristic s

200

Square Wave

T_J<= 175^oC, D = 0.5, V_CE= 400V

100

10s

V_GE= 15/0V, R_G= 6

100s

1ms

10 ms

DC

10

1

T_C= 25^oC

100

T_C= 75^oC

*Notes:

T_C= 100^oC

1. T_C= 25^oC

2. T_J= 175^oC

3. Single Pulse

0.1

0

1k

1

10

100

1000

10k

100k

1M

Collector-Emitter Voltage, V_CE[V]

Switching Frequency, f[Hz]

Figure 17. Forward Characteristics

Figure 18. Reverse Recovery Current

5

20

T_C= 25^oC

10

di/dt = 200A/s

T_C= 175^oC ---

4

di/dt = 200A/s

T_C= 25^oC

T_C= 75^oC

3

T_C= 175^oC

1

di/dt = 100A/s

T_C= 25^oC

T_C= 75^oC

T_C= 175^oC

2

di/dt = 100A/s

1

0.1

0

2

4

6

8

10

0

1

2

3

Forward Voltage, V_F[V]

Forward Current, I_F[A]

FGA4060ADF Rev. 1.0

6

www.fairchildsemi.com

Typical Performance Characteristics

Figure 19. Reverse Recovery Time

Figure 20. Stored Charge

600

400

T_C= 25^oC

T_C= 175^oC - - -

500

T_C= 175^oC - - -

300

400

300

200

di/dt = 200A/s

200

100

0

di/dt = 200A/s

di/dt = 100A/s

100

0

2

4

6

8

10

0

2

4

6

8

10

Forward Current, I_F[A]

Figure 21.Transient Thermal Impedance of IGBT

0.7

0.1

0.5

0.2

0.1

0.05

P_DM

0.02

0.01

t₁

t₂

single pulse

Duty Factor, D = t1/t2

0.01

Peak T_j= Pdm x Zthjc + T_C

0.005

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

Rectangular Pulse Duration [sec]

Figure 22.Transient Thermal Impedance of Diode

6

1

0.5

0.2

0.1

0.05

P_DM

0.02

t₁

0.01

t₂

Duty Factor, D = t1/t2

Peak T_j= Pdm x Zthjc + T_C

0.1

single pulse

0.05

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

Rectangular Pulse Duration [sec]

FGA4060ADF Rev. 1.0

7

www.fairchildsemi.com

5.00

4.60

13.80

13.40

1.65

1.45

3.30

3.10

16.20

15.40

5.20

4.80

R0.50

3°

16.96

16.56

20.10

19.70

18.90

18.50

7.20

6.80

3°

4°

1

3

2.00

1.60

3.70

3.30

1.85

2.60

2.20

20.30

19.70

2.20

1.80

3.20

2.80

1.20

0.80

M

0.55

0.75

0.55

5.45

NOTES: UNLESS OTHERW ISE SPECIFIED

A) THIS PACKAGE CONFORMS TO EIAJ

SC-65 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSION AND TOLERANCING PER

ASME14.5-2009.

D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSSIONS.

E) DRAW ING FILE NAME: TO3PN03AREV2.

F) FAIRCHILD SEMICONDUCTOR.

R0.50

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FGA4060ADF
厂家：	ONSEMI
描述：	IGBT，600 V，40 A 场截止沟槽局域网通用开关双极性晶体管
文件：	总10页 (文件大小：515K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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