FGA5065ADF [ONSEMI]
IGBT,650 V,50A,场截止沟槽;型号: | FGA5065ADF |
厂家: | ONSEMI |
描述: | IGBT,650 V,50A,场截止沟槽 局域网 通用开关 双极性晶体管 |
文件: | 总10页 (文件大小:503K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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August 2015
FGA5065ADF
650 V, 50 A Field Stop Trench IGBT
Features
General Description
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175oC
Positive Temperaure Co-efficient for Easy Parallel Operating
High Current Capability
This ADF IGBT series adopted field stop trench 3rd generation
IGBT which offer extreme low VCE(sat) and much faster switch-
ing characteristics for outstanding efficiency. And this kind of
technology is fully optimized to variety PFC (Power Factor Cor-
rection) topology; Single Boost, Multi Channel Interleaved etc
with over 20KHz switching performance. TO3P package provide
super low thermal resistance for much wider SOA for system
stability.
Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
Applications
RoHS Compliant
•
PFC topology for home applicnce: Single Boost, Multi Chan-
nel Interleaved etc.
C
G
G
C
TO-3PN
E
E
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Description
FGA5065ADF
Unit
V
VCES
Collector to Emitter Voltage
650
20
Gate to Emitter Voltage
V
VGES
Transient Gate to Emitter Voltage
Collector Current
30
V
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
100
A
IC
Collector Current
50
A
ILM (1)
ICM (2)
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
150
A
150
A
@ TC = 25oC
@ TC = 100oC
40
A
IF (3)
Diode Forward Current
20
A
IFM (2)
PD
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
120
A
@ TC = 25oC
@ TC = 100oC
268
W
W
oC
oC
134
TJ
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1. V = 400 V, V = 15 V, I =150 A, R = 55.9 Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. The purpose of diode is protection for negative voltage.
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
FGA5065ADF
Unit
oC/W
oC/W
oC/W
RJC(IGBT)
RJC(Diode)
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.56
1.71
40
Package Marking and Ordering Information
Part Number
Top Mark
Package Packaging Method Reel Size Tape Width
Quantity
FGA5065ADF
FGA5065ADF
TO-3PN
Tube
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA
Temperature Coefficient of Breakdown
650
-
-
-
-
V
BVCES
TJ
C = 1 mA, Reference to 25oC
/
V/oC
I
0.58
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
-
-
250
A
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 50 mA, VCE = VGE
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V,
4.1
-
5.6
1.7
7.6
2.2
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.28
-
V
T
C = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
1995
70
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
23
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20.8
41.6
62.4
11.2
1350
309
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Rise Time
Turn-Off Delay Time
Fall Time
VCC = 400 V, IC = 50 A,
R
G = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1659
19.2
38.4
67.2
12.8
1820
558
td(off)
tf
Turn-Off Delay Time
Fall Time
VCC = 400 V, IC = 50 A,
R
G = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
2378
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol
Qg
Parameter
Test Conditions
Min.
Typ.
72.2
13.5
28.5
Max Unit
Total Gate Charge
-
-
-
-
-
-
nC
nC
nC
V
V
CE = 400 V, IC = 50 A,
GE = 15 V
Qge
Gate to Emitter Charge
Gate to Collector Charge
Qgc
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
2.1
Max Unit
T
T
T
T
C = 25oC
C = 175oC
C = 175oC
C = 25oC
C = 175oC
C = 25oC
-
-
-
-
-
-
-
2.6
VFM
Diode Forward Voltage
IF = 20 A
V
1.94
50
-
Erec
trr
Reverse Recovery Energy
-
-
-
-
-
uJ
ns
31.8
192
50.6
699
Diode Reverse Recovery Time
IF =20 A, dIF/dt = 200 A/s
T
T
Qrr
Diode Reverse Recovery Charge
nC
TC = 175oC
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
150
TC = 175oC
TC = 25oC
20V
20V
15V
12V
10V
15V
10V
12V
120
90
90
60
30
0
VGE = 8V
60
VGE = 8V
30
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
150
Common Emitter
VGE = 15V
TC = 25oC
120
TC = 175oC
90
60
30
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
16
12
8
20
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
8
50A
50A
IC = 25A
100A
100A
IC = 25A
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
15
10000
Common Emitter
TC = 25oC
Cies
12
300V
VCC = 200V
1000
400V
9
6
3
0
Coes
100
Common Emitter
Cres
VGE = 0V, f = 1MHz
TC = 25oC
10
0
20
40
60
80
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
tr
100
tf
td(on)
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
IC = 50A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
10
4
8
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
500
4
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
Eon
tr
1
100
Eoff
Common Emitter
VCC = 400V, VGE = 15V
td(on)
IC = 50A
TC = 25oC
TC = 175oC
10
0.1
0
30
60
90
120
150
0
10
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
10
200
100
td(off)
Eon
1
tf
Common Emitter
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
Eoff
VGE = 15V, RG = 6
TC = 25oC
10
TC = 175oC
TC = 175oC
0.1
4
0
30
60
90
120
150
0
30
60
90
120
150
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristic s
200
250
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
100
10s
200
150
100
50
VGE = 15/0V, RG = 6
100s
TC = 25oC
1ms
10 ms
10
1
DC
TC = 75oC
TC = 100oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
0
1k
1
10
100
1000
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f[Hz]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
10
80
TC = 25oC
TC = 175oC
8
di/dt = 200A/s
TJ = 175oC
TJ = 25oC
6
10
di/dt = 100A/s
TJ = 75oC
4
di/dt = 200A/s
TC = 25oC
di/dt = 100A/s
2
TC = 75oC
TC = 175oC
4
0
1
0
10
20
30
40
0
1
2
3
5
Forward Current, IF [A]
Forward Voltage, VF [V]
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
300
1000
TC = 25oC
TC = 25oC
250 TC = 175oC
TC = 175oC
800
200
150
600
400
di/dt = 200A/s
di/dt = 100A/s
100
50
0
di/dt = 200A/s
di/dt = 100A/s
200
0
0
10
20
30
40
0
10
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21.Transient Thermal Impedance of IGBT
0.6
0.1
0.5
0.2
0.1
0.05
0.02
PDM
t1
t2
0.01
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
single pulse
0.005
10-5
10-4
10-3
10-2
10-1 100
Rectangular Pulse Duration [sec]
Figure 22.Transient Thermal Impedance of Diode
2
1
0.5
0.2
0.1
0.05
0.1
PDM
0.02
t1
0.01
t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FGA5065ADF Rev. 1.0
7
www.fairchildsemi.com
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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