FGAF20N60SMD [ONSEMI]
IGBT，600V，20A，场截止;
| 型号： | FGAF20N60SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，20A，场截止 局域网 电动机控制 栅 双极性晶体管 |
| 文件： | 总12页 (文件大小：1058K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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March 2014
FGAF20N60SMD
600 V, 20 A Field Stop IGBT
Features
General Description
o
•
•
•
•
•
•
•
•
Maximum Junction Temperature : T = 175 C
Using novel field stop IGBT technology, Fairchild’s new series of
J
nd
field stop 2 generation IGBTs offer the optimum performance
Positive Temperaure Co-efficient for easy Parallel Operating
High Current Capability
for solar inverter, UPS, welder and PFC applications where low
conduction and switching losses are essential.
Low Saturation Voltage: V
High Input Impedance
= 1.7 V(Typ.) @ I = 20 A
C
CE(sat)
Fast Swiching: E
= 7 uJ/A
OFF
Tightened Parameter Distribution
RoHS Compliant
Applications
•
Sewing Machine, CNC
•
Home Appliances, Motor-Control
C
G
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
V
V
Collector to Emitter Voltage
Gate to Emitter Voltage
600
CES
GES
20
V
o
Collector Current
@ T = 25 C
40
A
C
I
C
o
Collector Current
@ T = 100 C
20
A
C
I
I
Pulsed Collector Current
Diode Forward Current
60
A
CM (1)
o
@ T = 25 C
20
10
A
C
F
o
Diode Forward Current
@ T = 100 C
A
C
I
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
60
A
FM (1)
o
@ T = 25 C
75
W
W
C
P
D
o
@ T = 100 C
37.5
C
o
T
-55 to +175
-55 to +175
C
J
o
T
C
stg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
T
300
C
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
1
www.fairchildsemi.com
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
2.0
Unit
o
R
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
-
C/W
θJC
θJC
θJA
o
4.0
C/W
o
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGAF20N60SMD
FGAF20N60SMD
TO-3PF
-
-
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
Collector to Emitter Breakdown Voltage
V
V
= 0V, I = 250µA
600
-
-
-
-
V
CES
GE
GE
C
∆BV
∆T
Temperature Coefficient of Breakdown
Voltage
CES
o
= 0V, I = 250µA
0.62
V/ C
C
J
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
-
-
-
-
250
µA
CES
GES
CE
GE
CES
GE
, V = 0V
±400
nA
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 250µA, V = V
GE
3.5
-
4.7
1.7
6.0
2.5
V
V
GE(th)
C
C
C
CE
= 20A
,
V
= 15V
= 15V,
GE
V
Collector to Emitter Saturation Voltage
CE(sat)
= 20A
= 175 C
,
V
GE
-
1.9
-
V
o
T
C
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
925
89
-
-
-
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
30
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
22
-
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
-
r
Turn-Off Delay Time
Fall Time
91
-
d(off)
f
V
R
= 400V, I = 20A,
CC C
= 10Ω, V = 15V,
G
GE
21
27
o
Inductive Load, T = 25 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
452
141
593
12
-
on
187
off
-
-
-
-
-
-
-
-
ts
t
t
t
t
d(on)
r
19
Turn-Off Delay Time
Fall Time
93
d(off)
f
V
R
= 400V, I = 20A,
CC C
= 10Ω, V = 15V,
G
GE
16
o
Inductive Load, T = 175 C
C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
667
317
984
on
off
ts
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
2
www.fairchildsemi.com
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions
Min.
Typ.
64
Max Unit
Q
Q
Q
Total Gate Charge
-
-
-
-
-
-
nC
nC
nC
g
V
V
= 400V, I = 20A,
C
= 15V
CE
GE
Gate to Emitter Charge
Gate to Collector Charge
6.2
ge
gc
32
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
2.3
Max Unit
o
T
T
T
T
= 25 C
-
-
-
-
-
-
-
-
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 10A
F
V
FM
rec
o
= 175 C
1.67
13.8
26.7
88.2
42
-
o
E
t
Reverse Recovery Energy
= 175 C
-
-
-
-
-
uJ
ns
o
= 25 C
Diode Reverse Recovery Time
I =10A, dI /dt = 200A/µs
rr
F
F
o
T
T
T
= 175 C
o
= 25 C
Q
Diode Reverse Recovery Charge
nC
rr
o
= 175 C
245
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
65
65
TC = 25oC
20V
15V
12V
20V
15V
TC = 175oC
12V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
10V
VGE = 8V
VGE = 8V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
50
50
TC = 175oC
40
40
30
20
10
0
30
20
10
0
0
2
4
6
8
10
12
0.0
1.0
2.0
3.0
4.0
Gate-Emitter Voltage,VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
40A
15
10
5
20A
20A
40A
IC = 10A
IC = 10A
0
25
50
75
100
125
150
175
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
20
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
8
15
10
20A
IC = 20A
40A
IC = 10A
40A
10A
5
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
2000
Common Emitter
TC = 25oC
Cies
1000
12
VCC = 200V
400V
300V
9
6
3
0
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
30
20
0
20
40
60
80
5
10
15
20
25
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
10µs
100
1ms
10ms
µs
tr
10
1
td(on)
DC
10
Common Emitter
VCC = 400V, VGE = 15V
*Notes:
1. TC = 25oC
2. TJ = 175oC
0.1
0.01
IC = 20A
TC = 25oC
TC = 175oC
3. Single Pulse
1
1
10
100
1000
0
10
20
30
40
50
Gate Resistance, RG
[Ω]
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
100
1000
tr
td(off)
100
10
td(on)
tf
Common Emitter
10
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
30
VCC = 400V, VGE = 15V
IC = 20A
Ω
TC = 25oC
TC = 175oC
1
10
1
0
10
20
30
40
50
20
40
Gate Resistance, RG
[Ω]
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs.
Gate Resistance
1000
1000
Eon
Common Emitter
VGE = 15V, RG = 10
Ω
TC = 25oC
Eoff
TC = 175oC
100
100
td(off)
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
tf
TC = 175oC
10
10
10
20
30
40
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG
[Ω]
Figure 17. Switching Loss vs.
Collector Current
10000
Figure 18. Turn off Switching
SOA Characteristics
100
10
1
Eon
1000
100
Eoff
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
Ω
10
Safe Operating Area
VGE = 15V, TC = 175oC
TC = 175oC
1
10
20
30
40
1
10
100
1000
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Current Derating
Figure 20. Power Dissipation
70
Common Emitter
Common Emitter
VGE = 15V
20
VGE = 15V
60
50
40
30
20
10
0
15
10
5
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Case Temperature, TC [oC]
Case Temperature, TC [oC]
Figure 21. Load Current Vs. Frequency
Figure 22. Forward Characteristics
60
100
VCC = 400V
load Current : peak of square wave
50
40
TC = 100oC
TC = 175oC
30
10
TC = 25oC
20
Duty cycle : 50%
10
TC = 100o
C
Powe Dissipation = 37.5 W
10k
0
1k
1
100k
1M
0
1
2
3
4
Forward Voltage, VF [V]
Switching Frequency, f [Hz]
Figure 23. Reverse Current
Figure 24. Stored Charge
1000
75
100
10
TJ = 175oC
di/dt = 200A/
µs
50
1
TJ = 100oC
25
di/dt = 100A/
µs
0.1
TJ = 25oC
Tc = 25oC
0.01
0
50
200
400
600
5
10
15
20
Reverse Voltage, VR [V]
Forward Current, IF [A]
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
7
www.fairchildsemi.com
Typical Performance Characteristics
Figure 25. Reverse Recovery Time
40
35
30
25
20
di/dt = 100A/
µ
s
di/dt = 200A/
µ
s
Tc = 25oC
5
10
15
20
Forward Current, IF [A]
Figure 26.Transient Thermal Impedance of IGBT
3
1
0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
Figure 27.Transient Thermal Impedance of Diode
5
1
0.5
0.2
0.1
0.05
0.02
0.1
PDM
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10 100
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
8
www.fairchildsemi.com
Mechanical Dimensions
Figure 28. TO3PF,MOLDED,3LD,FULLPACK (AG)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO3PF-003
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
9
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2012 Fairchild Semiconductor Corporation
FGAF20N60SMD Rev. C4
10
www.fairchildsemi.com
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