FGAF30S65AQ [ONSEMI]
IGBT, 650 V,30A Field Stop Trench;
| 型号： | FGAF30S65AQ |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 650 V,30A Field Stop Trench 双极性晶体管 |
| 文件： | 总9页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT,
30 A, 650 V
FGAF30S65AQ
Using novel field stop IGBT technology, ON Semiconductor’s new
th
series of field stop 4 generation of RC IGBTs offer the optimum
performance for PFC applications and welder where low conduction
and switching losses are essential.
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Features
30 A, 650 V
CE(sat) = 1.4 V (Typ.)
• Maximum Junction Temperature: T = 175°C
J
V
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
C
• Low Saturation Voltage: V
= 1.4 V (Typ.) @ I = 30 A
C
CE(Sat)
• 100% of the Parts Tested for I (Note 1)
LM
• High Input Impedance
G
• Fast Switching
E
• Tighten Parameter Distribution
• IGBT with Monolithic Reverse Conducting Diode
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• PFC, Welder
MAXIMUM RATINGS
TO−3PF
CASE 340AH
Rating
Symbol
Value
Unit
V
Collector to Emitter Voltage
V
CES
V
GES
650
MARKING DIAGRAM
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
Collector Current
@T = 25°C
C
I
C
60
30
A
C
@T = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
I
90
90
A
A
A
LM
I
CM
&Y
Diode Forward Current
@T = 25°C
I
F
30
15
C
FGAF30S65
AQ&E&3&K
@ T = 100°C
C
Pulsed Diode Maximum Forward Current
I
90
A
FM
Maximum Power Dissipation@T = 25°C
P
D
83
42
W
C
@ T = 100°C
C
G
C
E
Operating Junction / Storage Temperature T , T
−55 to
°C
°C
J
STG
Range
+175
&Y
&E
&3
&K
= ON Semiconductor Logo
= Designate space on marking
= 3−Digit Data Code
Maximum Lead Temp. for Soldering Pur-
poses, 1/8″ from case for 5 seconds
T
L
260
= 2−Digit Lot Traceability Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FGAF30S65AQ = Specific Device Code
1. V = 400 V, V = 15 V, I = 90 A, R = 13 W, Inductive Load, 100% Tested
CC
GE
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature
ORDERING INFORMATION
Device
Package
Shipping
FGAF30S65AQ
TO−3PF−3L
30 Units / Rail
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2020 − Rev. 2
FGAF30S65AQ/D
FGAF30S65AQ
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.8
Unit
Thermal Resistance, Junction−to−Case, for IGBT
Thermal Resistance, Junction−to−Case, for Diode
Thermal Resistance, Junction−to−Ambient
R
_C/W
_C/W
_C/W
q
JC
R
2.3
q
JC
R
40
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
V
= 0 V, I = 1 mA
BV
650
−
−
0.5
−
−
V
V/°C
mA
GE
C
CES
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
DBV
/
−
GE
C
CES
J
DT
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V = 650 V
I
−
250
400
CE
CES
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V = 0 V
I
−
−
nA
CE
GES
ON CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 30 mA
V
GE(th)
2.6
5.3
6.6
V
V
GE
CE
C
V
= 15 V, I = 30 A
V
CE(sat)
−
−
1.4
1.7
2.1
−
GE
C
V
GE
= 15 V, I = 30 A, T = 175°C
C
J
DYNAMIC CHARACTERISTIC
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
1959
29
8
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
res
V
CE
= 400 V, I = 30 A, V = 15 V
Q
58
13
17
C
GE
g
Gate to emitter charge
Gate to collector charge
Q
Q
ge
gc
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T = 25°C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17.6
6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V, I = 7.5 A
CC
C
Rise time
t
r
R = 13 W
g
Turn−off delay time
Fall time
t
97
d(off)
V
GE
= 15 V
Inductive Load
t
f
44
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
295
82
mJ
E
ts
377
18
T = 25°C
t
t
ns
J
d(on)
V
= 400 V, I = 15 A
CC
C
t
r
11
R = 13 W
g
Turn−off delay time
Fall time
92
d(off)
V
GE
= 15 V
Inductive Load
t
f
24
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
515
140
655
mJ
E
ts
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2
FGAF30S65AQ
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T = 175°C
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17.6
6.4
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V, I = 7.5 A
CC
C
Rise time
t
r
R = 13 W
g
Turn−off delay time
Fall time
110
56
d(off)
V
GE
= 15 V
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
442
145
587
18
mJ
E
ts
T = 175°C
t
t
ns
J
d(on)
V
= 400 V, I = 15 A
CC
C
t
r
12
R = 13 W
g
Turn−off delay time
Fall time
104
48
d(off)
V
GE
= 15 V
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTIC
Forward Voltage
E
on
E
off
741
274
1015
mJ
E
ts
I = 15 A
V
F
−
−
1.3
1.3
1.6
−
V
F
I = 15 A, T = 175°C
F
J
Reverse Recovery Energy
I = 15 A, dl /dt = 200 A/ms
E
rec
−
−
239
−
−
mJ
F
F
Diode Reverse Recovery Time
I = 15 A, dl /dt = 200 A/ms
T
rr
267
347
nS
F
F
I =15 A, dl /dt = 200 A/ms, T = 175°C
F
F
J
Diode Reverse Recovery Charge
I = 15 A, dl /dt = 200 A/ms
Q
rr
−
1135
1873
−
nC
F
F
I = 15 A, dl /dt = 200 A/ms, T = 175°C
F
F
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGAF30S65AQ
TYPICAL CHARACTERISTICS
120
90
120
20 V
10 V
12 V
20 V
15 V
12 V
10 V
15 V
90
60
V
GE
= 8 V
V
GE
= 8 V
60
30
0
30
0
T = 25°C
T = 175°C
J
J
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
160
120
80
3.0
2.5
2.0
Common Emitter
Common Emitter
V
= 15 V
V
= 15 V
GE
GE
T = 175°C
T = 25°C
J
J
I
= 60 A
C
I
I
= 30 A
= 15 A
C
40
0
1.5
1.0
C
1
2
3
4
5
−100
−50
0
50
100
150
200
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
T , COLLECTOR−EMITTER CASE TEMPERATURE (°C)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
16
Common Emitter
T = 25°C
Common Emitter
T = 175°C
J
J
12
8
I
C
= 60 A
I
= 60 A
C
I
= 15 A
4
C
4
0
4
0
I
C
= 30 A
12
I
C
= 30 A
I
= 15 A
C
4
8
16
20
0
8
12
16
20
V
GE
, GATE−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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4
FGAF30S65AQ
TYPICAL CHARACTERISTICS
15
Common Emitter
T = 25°C
Common Emitter
= 0 V, f = 1 MHz
10K
1K
V
J
GE
V
= 400 V
= 300 V
CC
12
9
T = 25°C
J
C
ies
V
CC
= 200 V
V
100
CC
6
C
oes
10
1
3
0
C
res
1
0
0
10
, COLLECTOR−EMITTER VOLTAGE (V)
30
50
50
0
15
30
45
60
75
90
V
Q , GATE CHARGE (nC)
g
CE
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge
200
100
1000
100
t , T = 25°C
r
J
t
, T = 175°C
J
d(off)
t , T = 175°C
t
, T = 25°C
J
r
J
d(off)
t
, T = 25°C
J
d(on)
t , T = 25°C
t
, T = 175°C
f
J
d(on)
J
10
1
10
1
Common Emitter
= 400 V, V = 15 V
Common Emitter
V = 400 V, V = 15 V
CC
I = 30 A
V
CC
GE
GE
t , T = 175°C
f
J
I
C
= 30 A
C
10
20
30
40
10
20
30
40
50
R , GATE RESISTANCE (W)
g
R , GATE RESISTANCE (W)
g
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
5000
1000
1000
100
Common Emitter
Common Emitter
V
I
= 400 V, V = 15 V
= 30 A
V
CC
= 400 V, V = 15 V
= 13 W
CC
GE
GE
E
, T = 175°C
on
J
R
C
G
t , T = 175°C
r
J
E
on
, T = 25°C
J
t , T = 25°C
r
J
E
off
, T = 175°C
J
t
, T = 25°C
J
d(on)
E
off
, T = 25°C
J
10
1
t
, T = 175°C
d(on) J
100
10
20
30
40
0
10
20
30
40
50
60
70
80
90
R , GATE RESISTANCE (W)
g
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. Gate Resistance
Figure 12. Turn−On Characteristics vs.
Collector Current
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5
FGAF30S65AQ
TYPICAL CHARACTERISTICS
1000
100
10K
E
on
, T = 25°C
J
E
on
, T = 175°C
J
t
, T = 175°C
J
d(off)
1K
t
, T = 25°C
d(off) J
E
off
, T = 175°C
J
t , T = 25°C
f
J
E
off
, T = 25°C
J
10
1
100
10
t , T = 175°C
Common Emitter
= 400 V, V = 15 V
f
J
Common Emitter
= 400 V, V = 15 V
V
CC
V
CC
GE
GE
R
= 13 W
R
= 13 W
G
G
0
10
20
30
40
50
60
70
80
90
1M
5
0
1
0
10
20
30
40
50
60
70
80 90
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 13. Turn−Off Characteristics vs.
Figure 14. Switching Loss vs. Collector
Current
Collector Current
100
90
80
70
60
50
40
30
20
300
100
Square Wave
= 400 V, V = 15/0 V
T = 25°C
J
V
CC
GE
T ≤ 175°C, D = 0.5 V
J
10 ms
R
= 13 W
T = 75°C
J
G
10
100 ms
T = 100°C
J
1 ms
1
T = 25°C
T = 175°C
Single Pulse
J
10 ms
DC
J
10
0
0.1
1K
10K
100K
10
100
1000
SWITCHING FREQUENCY (fHz)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics (FBSOA)
16
14
12
10
8
80
10
T = 175°C
J
T = 25°C
J
T = 175°C, di/dt = 200 A/ms
J
T = 75°C
J
T = 25°C, di/dt = 200 A/ms
J
T = 175°C, di/dt = 100 A/ms
J
6
T = 25°C, di/dt = 100 A/ms
J
4
2
0
1
0
1
2
3
4
10
20
30
40
V , FORWARD VOLTAGE (V)
F
I , FORWARD CURRENT (A)
F
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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6
FGAF30S65AQ
TYPICAL CHARACTERISTICS
600
500
400
300
200
2500
T = 175°C, di/dt = 200 A/ms
T = 175°C, di/dt = 100 A/ms
J
T = 175°C, di/dt = 100 A/ms
J
J
2000
1500
1000
T = 175°C, di/dt = 200 A/ms
J
T = 25°C, di/dt = 200 A/ms
J
T = 25°C, di/dt = 100 A/ms
J
500
0
100
0
T = 25°C, di/dt = 100 A/ms
J
T = 25°C, di/dt = 200 A/ms
J
0
10
20
30
40
0
10
20
30
40
I , FORWARD CURRENT (A)
F
I , FORWARD CURRENT (A)
F
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
P
DM
Notes:
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
q
J
DM
1%
t
1
2
1
t
2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (sec)
Figure 21. Transient Thermal Impedance of IGBT
5
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
P
DM
Notes:
Peak T = P
Duty Cycle, D = t /t
Single Pulse
0.00001
x Z
(t) + T
JC C
q
J
DM
t
1
2
1
t
2
0.01
0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (sec)
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3PF−3L
CASE 340AH
ISSUE A
DATE 09 JAN 2015
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES).
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20.
SEATING
PLANE
P
A
E
A1
Q
H1
MILLIMETERS
DIM MIN
MAX
5.70
3.20
3.50
2.20
0.95
2.15
4.20
1.10
24.70
25.30
3.70
15.70
5.55
10.20
19.50
5.20
2.20
3.80
4.70
A
A1
A2
A3
b
5.30
2.80
3.10
1.80
0.65
1.90
3.80
0.80
24.30
D
b2
b3
c
D2
D
L2
D3
D2 24.70
L1
D3
E
3.30
15.30
5.35
9.80
19.10
4.80
1.90
3.40
4.30
e
H1
L
L1
L2
P
NOTE 3
L
Q
1
2
3
c
3X b
3X b2
A3
A2
b3
e
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79755E
TO−3PF−3L
PAGE 1 OF 1
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