FGB3056-F085 [ONSEMI]
IGBT，EcoSPARK® 300mJ，560V，N 沟道点火;
| 型号： | FGB3056-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，EcoSPARK® 300mJ，560V，N 沟道点火 双极性晶体管 |
| 文件： | 总8页 (文件大小：2955K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGB3056-F085
®
EcoSPARK 300mJ, 560V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive
Coil On Plug Applications
Package
JEDEC TO-263AB
2
D -Pak
GATE
COLLECTOR
(FLANGE)
EMITTER
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
560
20
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = -20mA)
V
ESCIS25 ISCIS = 14.2A, L = 3.0mHy, RGE = 1KΩ
ESCIS150 ISCIS = 10.8A, L = 3.0mHy, RGE = 1KΩ
TC = 25°C
300
mJ
mJ
A
TC = 150°C
170
IC25
Collector Current Continuous, at VGE = 5V, TC = 25°C
Collector Current Continuous, at VGE = 5V, TC = 110°C
Gate to Emitter Voltage Continuous
29
IC110
VGEM
24
A
±10
V
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TC = 25°C
TC > 25°C
200
W
PD
1.33
-40 to +175
-40 to +175
300
W/oC
oC
oC
oC
oC
kV
TJ
Operating Junction Temperature Range
TSTG
TL
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Reflow soldering according to JESD020C
TPKG
ESD
260
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
4
@2016 Semiconductor Components Industries, LLC.
Publication Order Number:
August-2017, Rev. 2
FGB3056-F085/D
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
0.75
oC/W
Electrical Characteristics of the IGBT TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
V
GE = 0V,ICE = 2mA,
BVCER Collector to Emitter Breakdown Voltage RGE = 1KΩ,
TJ = -40 to 150oC
VGE = 0V, ICE = 10mA,
530 560 600
V
BVCES Collector to Emitter Breakdown Voltage RGE = 0Ω,
-
595
26
-
-
V
V
TJ = -40 to 150oC
VGE = 0V, ICE = -75mA,
TJ = 25°C
BVECS Emitter to Collector Breakdown Voltage
BVGES Gate to Emitter Breakdown Voltage
20
IGES = ±5mA
±12 ±14
-
40
1
V
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
-
-
-
μA
mA
V
CE = 250V, RGE = 1KΩ
ICER
Collector to Emitter Leakage Current
-
-
-
-
1
V
EC = 20V
IECS
R1
Emitter to Collector Leakage Current
Series Gate Resistance
mA
-
-
40
-
100
Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage VGE = 5V, ICE = 2A
VCE(SAT) Collector to Emitter Saturation Voltage VGE = 5V, ICE = 8A
TJ = 2 5 oC
TJ = 150oC
-
-
1 . 0
1 . 1
V
V
1.3 1.55
Dynamic Characteristics
QG(ON) Gate Charge
VGE = 5V, VCE = 12V, ICE = 10A
-
15.6
1.6
20
2.2
-
nC
V
TJ = 25oC
1.3
VGE(TH) Gate to Emitter Threshold Voltage
ICE = 1mA, VCE = VGE,
VCE = 12V, ICE = 1 0 A
TJ = 150oC
-
-
1.1
2 . 8
VGEP
Gate to Emitter Plateau Voltage
-
V
Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive
-
-
-
-
0.8
1.3
μs
μs
μs
μs
VCE = 14V, RL = 1Ω
V
GE = 5V, RG = 1KΩ
VCE = 300V, L = 1mH,
GE = 5V, RG = 1KΩ
trR
Current Rise Time-Resistive
1.48 2.4
td(OFF)L Current Turn-Off Delay Time-Inductive
5.1
1.1
8.2
1.8
V
tfL
Current Fall Time-Inductive
Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGB3056
FGB3056-F085
TO-263AB
330mm
24mm
800units
www.onsemi.com
2
Typical Performance Curves
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
www.onsemi.com
3
(Continued)
Typical Performance Curves
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
www.onsemi.com
4
(Continued)
Typical Performance Curves
Figure 13. Capacitance vs. Collector to Emitter
Voltage
Figure 14. Gate Charge
Figure 15. Break down Voltage vs. Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
www.onsemi.com
5
Typical Performance Curves
Figure 17. Forward Safe Operating Area
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FGB30N6S2T
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明