FGB3236-F085 [ONSEMI]
IGBT,360V,27A,1.32V,320mJ,EcoSPARK® II,N 沟道点火;型号: | FGB3236-F085 |
厂家: | ONSEMI |
描述: | IGBT,360V,27A,1.32V,320mJ,EcoSPARK® II,N 沟道点火 汽车点火 栅 双极性晶体管 |
文件: | 总10页 (文件大小:514K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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EcoSPARKꢀ Ignition IGBT
20 mJ, 360 V, N−Channel Ignition IGBT
FGB3236-F085,
FGI3236-F085
2
D PAK−3
I2PAK (TO−262 3 LD)
CASE 418AJ
CASE 418AV
Features
2
• Industry Standard D PAK Package
MARKING DIAGRAM
• SCIS Energy = 330 mJ at T = 25°C
J
1 Gate
2 Collector
3 Emitter
• Logic Level Gate Drive
AYWW
XXX
XXXXXG
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
4 Collector
Applications
A
Y
WW
XXXX
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
• Automotive Ignition Coil Driver Circuits
• Coil On Plug Applications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Collector (Flange)
Symbol
Parameter
Value
Units
BV
Collector to Emitter Breakdown Voltage
C
360
V
CER
(I = 1 mA)
$Y&Z&3&K
FGI
3236
BV
Emitter to Collector Voltage − Reverse
24
320
160
44
V
mJ
mJ
A
ECS
Battery Condition (I = 10 mA)
C
E
Self Clamping Inductive Switching Energy
SCIS25
(I
SCIS
= 14.7 A, L = 3.0 mHy, T = 25°C)
J
Gate
Emitter
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
E
Self Clamping Inductive Switching Energy
(I = 10.4 A, L = 3.0 mHy, T = 150°C)
SCIS150
SCIS
J
$Y
&Z
&3
&K
I
Collector Current Continuous
at V = 4.0 V, T = 25°C
C25
GE
C
I
Collector Current Continuous
at V = 4.0 V, T = 110°C
27
A
C110
FGI3236 = Specific Device Code
GE
C
V
Gate to Emitter Voltage Continuous
10
187
V
W
GEM
P
Power Dissipation Total, at T = 25°C
D
C
SYMBOL
Power Dissipation Derating, for T > 25°C
1.25
W/°C
°C
C
COLLECTOR
T
J
Operating Junction Temperature Range
Storage Junction Temperature Range
−40 to +175
−40 to +175
300
T
T
°C
STG
R
1
T
L
Max. Lead Temperature for Soldering
(Leads at 1.6 mm from case for 10 s)
°C
GATE
R
2
Max. Lead Temperature for Soldering
(Package Body for 10 s)
260
4
°C
PKG
ESD
Electrostatic Discharge Voltage
at 100 pF, 1500 W
kV
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 3
of this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
July, 2022 − Rev. 2
FGB3236−F085/D
FGB3236−F085, FGI3236−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF STATE CHARACTERISTICS
BV
BV
BV
Collector to Emitter Breakdown
Voltage
I
= 2 mA, V = 0 V,
GE
330
363
390
V
CER
CE
GE
R
= 1 kW, see Figure 15
T = −40 to 150°C
J
Collector to Emitter Breakdown
Voltage
I
= 10 mA, V = 0 V,
350
30
378
410
V
V
CES
CE
GE
R
= 0,
GE
T = −40 to 150°C
J
Emitter to Collector Breakdown
Voltage
I
= −75 mA, V = 0 V,
−
−
ECS
CE
GE
T = 25°C
J
BV
I
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
=
2 mA
12
−
14
−
−
25
1
V
GES
GES
V
= 250 V,
T = 25°C
J
mA
mA
mA
CES
CES
see Figure 11
T = 150°C
J
−
−
I
Emitter to Collector Leakage Current
V
= 24 V,
T = 25°C
J
−
−
1
ECS
EC
see Figure 11
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
−
120
−
W
W
1
2
Gate to Emitter Resistance
10K
30K
ON STATE CHARACTERISTICS
V
V
V
Collector to Emitter Saturation
Voltage
I
= 6 A, V = 4 V, T = 25°C,
−
−
1.14
1.32
1.61
−
1.4
1.7
2.05
−
V
V
V
A
CE(SAT)
CE(SAT)
CE(SAT)
CE(ON)
CE
GE
C
see Figure 3
I = 10 A, V = 4.5 V, T = 150°C,
CE
Collector to Emitter Saturation
Voltage
GE
C
see Figure 4
Collector to Emitter Saturation
Voltage
I
= 15 A, V = 4.5 V, T = 150°C
−
CE
GE
C
I
Collector to Emitter On State Current
V
= 5 V, V = 5 V
50
GE
CE
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
= 10 A, V = 12 V, V = 5 V,
−
20
−
nC
V
G(ON)
CE
CE
GE
see Figure 14
V
Gate to Emitter Threshold Voltage
I
= 1 mA,
T
T
= 25°C
1.3
0.75
−
1.6
1.1
2.6
2.2
1.8
−
GE(TH)
CE
C
V
= V
,
CE
GE
= 150°C
see Figure 10
C
V
Gate to Emitter Plateau Voltage
V
= 12 V, I = 10 A
V
GEP
CE
CE
SWITCHING CHARACTERISTICS
t
Current Turn−On Delay
Time−Resistive
V
V
J
= 14 V, R = 1 W,
−
0.65
4
ms
d(ON)R
CE
GE
L
= 5 V, R = 1 kW,
G
T = 25°C, see Figure 12
t
rR
Current Rise Time−Resistive
−
−
1.7
5.4
7
t
Current Turn−Off Delay
Time−Inductive
V
CE
V
GE
= 300 V, L = 500 mHy,
15
d(OFF)L
= 5 V, R = 1 kW,
G
T = 25°C, see Figure 12
J
t
fL
Current Fall Time−Inductive
−
−
1.64
15
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0 mHy, I = 14.7 A,
−
320
mJ
J
CE
V
GE
= 5 V, R = 1 kW,
G
see Figures 1 & 2
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case All Packages
R
−
−
0.8
°C/W
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGB3236−F085, FGI3236−F085
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Marking
FGB3236
FGB3236
FGI3236
Package
Shipping
2
FGB3236−F085
FGB3236−F085C
FGI3236−F085
D PAK (Pb−Free)
800 units / Tape & Reel
800 units / Tape & Reel
400 units / Tube
2
D PAK (Pb−Free)
I2PAK (TO−262 3 LD) (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
FGB3236−F085, FGI3236−F085
TYPICAL PERFORMANCE CHARACTERISTICS
35
35
30
25
20
15
10
5
RG = 1KW, VGE = 5V
RG = 1K W , VGE = 5V
30
25
20
T
J = 25oC
T
J = 25o
C
15
10
5
TJ = 150 o
C
TJ = 150 o
C
Voltages of <410V
SCIS Curves valid for V
clamp
Voltages of <410V
SCIS Curves valid for V
clamp
0
0
0
20
40
60
80
, TIME IN CLAMP ( S)
100 120 140 160
0
2
4
6
8
10
L, INDUCTANCE (mHy)
tCLP
m
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.25
1.45
ICE = 10A
ICE = 6A
1.20
1.15
1.10
1.05
1.00
1.40
1.35
1.30
1.25
1.20
V
GE = 3.7V
V
GE = 3.7V
VGE = 4.0V
V
GE = 4.0V
VGE = 8V
VGE = 4.5V
V
GE = 5V
V
GE = 5V
VGE = 4.5V
V
GE = 8V
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
J, JUNCTION TEMPERTURE (oC)
J, JUNCTION TEMPERTURE (oC)
T
T
Figure 3. Collector to Emitter On−State Voltage
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
vs. Junction Temperature
50
50
VGE = 8.0V
VGE = 8.0V
VGE = 5.0V
VGE = 5.0V
40
30
20
10
0
40
30
20
10
0
V
GE = 4.5V
VGE = 4.0V
GE = 3.7V
V
GE = 4.5V
VGE = 4.0V
GE = 3.7V
V
V
TJ = −40oC
TJ = 25 oC
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On−State Voltage
Figure 6. Collector to Emitter On−State Voltage
vs. Collector Current
vs. Collector Current
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4
FGB3236−F085, FGI3236−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
50
40
30
20
10
0
50
VGE = 8.0V
VGE = 5.0V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
V
GE = 4.5V
VCE = 5V
VGE = 4.0V
VGE = 3.7V
T
J = 175 o
C
T
J = 25 o
C
TJ = −40oC
TJ = 175 oC
0
1
2
3
4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On−State Voltage
Figure 8. Transfer Characteristics
vs. Collector Current
50
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGE = 4.0V
= VGE
VCE
CE = 1mA
I
40
30
20
10
0
25
50
75
100
125
150
175
−50 −25
0
25 50
75
100 125 150 175
C, CASE TEMPERATURE(oC)
T
J, JUNCTION TEMPERATURE(oC)
T
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
50000
14
ICE = 6.5A, V GE = 5V, R G = 1KΩ
10000
1000
100
10
12
10
8
VECS = 24V
Resistive t OFF
Inductive t
OFF
6
VCES = 300V
4
Resistive t ON
1
2
VCES = 250V
0.1
−50 −25
0
25
0
25
50
75 100 125 150 175
50
75
100
125
150
175
J, JUNCTION TEMPERATURE (oC)
J, JUNCTION TEMPERATURE (oC)
T
T
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
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5
FGB3236−F085, FGI3236−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2000
1600
1200
800
400
0
10
ICE = 10A, T J = 25o
C
f = 1MHz
V
GE = 0V
8
6
4
2
0
VCE = 6V
CIES
VCE = 12V
CRES
COES
0
5
10
15
20
25
0
10
20
30
40
50
DS, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE CHARGE(nC)
Qg
Figure 13. Capacitance vs. Collector to Emitter
Voltage
Figure 14. Gate Charge
380
I
CER = 10mA
370
360
350
TJ = −40oC
TJ = 25o
C
T
J = 175 o
C
6000
10
100
, SERIES GATE RESISTANCE (
1000
)
RG
W
Figure 15. Break Down Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.1
P
DM
0.01
t
1
0.01
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T = P
x Z
x R
+ T
qJC
qJC
J
DM
C
SINGLE PULSE
1E−3
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
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6
FGB3236−F085, FGI3236−F085
TEST CIRCUIT AND WAVEFORMS
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
I2PAK (TO−262 3 LD)
CASE 418AV
ISSUE A
DATE 30 AUG 2022
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXXX
XXXXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13814G
I2PAK (TO−262 3 LD)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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