FGB30N6S2T [ROCHESTER]
45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3;
| 型号： | FGB30N6S2T |
| 厂家： | 
Rochester Electronics |
| 描述： | 45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：858K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125 C
• Low Gate Charge . . . . . . . . . 23nC at V = 15V
GE
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Formerly Developmental Type TA49367.
Symbol
Package
C
TO-247
E
C
E
TO-220AB
C
G
G
TO-263AB
G
G
E
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
BV
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T = 25°C
Ratings
Units
600
45
V
A
A
A
V
V
CES
I
C25
C
I
Collector Current Continuous, T = 110°C
20
C110
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
108
CM
V
±20
GES
GEM
V
±30
SSOA
Switching Safe Operating Area at T = 150°C, Figure 2
60A at 600V
150
J
E
Pulsed Avalanche Energy, I = 20A, L = 1.3mH, V = 50V
mJ
W
AS
CE
DD
P
Power Dissipation Total T = 25°C
167
D
C
Power Dissipation Derating T > 25°C
1.33
W/°C
°C
C
T
Operating Junction Temperature Range
Storage Junction Temperature Range
-55 to 150
-55 to 150
J
T
°C
STG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1
Package Marking and Ordering Information
Device Marking
30N6S2
Device
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30 Units
50 Units
50 Units
800 Units
FGH30N6S2
FGP30N6S2
FGB30N6S2
FGB30N6S2T
30N6S2
TO-220AB
TO-263AB
TO-263AB
Tube
N/A
30N6S2
Tube
N/A
30N6S2
330mm
24mm
Electrical Characteristics T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
BV
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
I
I
= 250µA, V = 0
600
-
-
-
-
-
-
-
V
V
CES
ECS
C
GE
= -10mA, V = 0
20
-
C
GE
I
V
= 600V
T = 25°C
100
2
µA
mA
nA
CES
CE
GE
J
T = 125°C
-
J
I
Gate to Emitter Leakage Current
V
= ± 20V
-
±250
GES
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 12A,
T = 25°C
-
-
2.0
1.7
2.5
2.0
V
V
CE(SAT)
C
J
= 15V
GE
T = 125°C
J
Dynamic Characteristics
Q
Gate Charge
I
V
= 12A,
V
V
= 15V
= 20V
-
-
23
26
29
33
nC
nC
V
G(ON)
C
GE
= 300V
CE
GE
V
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
I
= 250µA, V = 600V
3.5
-
4.3
6.5
5.0
8.0
GE(TH)
C
C
CE
V
= 12A, V = 300V
V
GEP
CE
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 10Ω, VGE
15V, L = 100µH, VCE = 600V
=
60
-
-
A
t
Current Turn-On Delay Time
Current Rise Time
IGBT and Diode at T = 25°C,
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6
-
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
d(ON)I
J
I
= 12A,
t
CE
10
-
rI
d(OFF)I
V
V
= 390V,
= 15V,
CE
t
Current Turn-Off Delay Time
Current Fall Time
40
-
GE
t
53
-
-
fI
R
= 10Ω
G
E
E
E
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
55
ON1
ON2
OFF
L = 200µH
Test Circuit - Figure 20
110
100
11
-
150
-
t
IGBT and Diode at T = 125°C
J
d(ON)I
I
= 12A,
t
CE
17
-
rI
d(OFF)I
V
V
= 390V,
= 15V,
CE
t
Current Turn-Off Delay Time
Current Fall Time
73
100
100
-
GE
t
90
fI
R
= 10Ω
G
E
E
E
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
55
ON1
ON2
OFF
L = 200µH
Test Circuit - Figure 20
160
250
200
350
Thermal Characteristics
R
Thermal Resistance Junction-Case
-
-
0.75
°C/W
θJC
NOTE:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
ON1
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
ON2
as the IGBT. The diode type is specified in figure 20.
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
OFF
the input pulse and ending at the point where the collector current equals zero (I = 0A). All devices were tested per
CE
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Typical Performance Curves
70
60
50
40
30
20
10
0
50
TJ = 150oC, RG = 10
Ω, VGE = 15V, L = 100µH
40
30
20
10
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TC, CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
1000
12
10
8
350
300
250
200
150
100
o
V
= 390V, R = 10Ω, T = 125 C
G J
TC
CE
75oC
VGE = 10V
VGE = 15V
I
SC
t
fMAX1 = 0.05 / (td(OFF)I + td(ON)I
)
SC
100
f
MAX2 = (PD - PC) / (EON2 + EOFF
)
6
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
ØJC = 0.49oC/W, SEE NOTES
R
4
TJ = 125oC, RG = 3
Ω, L = 200µH, VCE = 390V
2
9
10
11
12
13
14
15
16
10
20
30
1
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
GE
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
18
18
DUTY CYCLE < 0.5%, VGE = 10V
16
DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250
16
14
12
10
8
PULSE DURATION = 250µs
µs
14
12
10
8
6
6
TJ = 150oC
TJ = 125oC
TJ = 125oC
TJ = 150oC
4
4
TJ = 25oC
1.75
TJ = 25oC
1.75
2
2
0
0.50
0
.5
.75
1
1.25
1.50
2.0
2.25
0.75
1.00
1.25
1.50
2.00
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Typical Performance Curves (Continued)
600
500
400
300
200
100
0
400
R
G = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
350
300
250
200
150
100
50
TJ = 125oC, VGE = 10V, VGE = 15V
TJ = 125oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
0
0
5
10
15
20
25
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
16
40
RG = 10
Ω
, L = 500
µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
14
12
10
8
35
30
25
20
15
10
5
TJ = 25oC, TJ = 125oC, VGE = 10V
TJ = 125oC, VGE = 15V, VGE = 10V
6
4
TJ = 25oC, VGE = 10V, VGE =15V
TJ = 25oC, TJ = 125oC, VGE = 15V
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
90
120
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
70
60
50
40
30
20
100
80
TJ = 125oC, VGE = 10V OR 15V
60
TJ = 25oC, VGE = 10V OR 15V
40
0
5
10
15
20
25
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Typical Performance Curves (Continued)
16
14
12
10
8
175
o
I
= 1mA, R = 25Ω, T = 25 C
DUTY CYCLE < 0.5%, V = 10V
CE
G(REF)
L
J
PULSE DURATION = 250µs
150
125
V
= 600V
CE
TJ = 25oC
100
75
50
6
V
= 400V
CE
4
V
= 200V
CE
6
TJ = 125o
C
7
25
0
2
TJ = -55oC
0
0
2
4
8
10 12 14 16 18 20 22 24
, GATE CHARGE (nC)
5
6
8
9
10
11
12
13
14
15
16
Q
VGE , GATE TO EMITTER VOLTAGE (V)
G
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
10
1.2
1.0
0.8
0.6
0.4
0.2
0
o
R
= 10Ω, L = 500µH, V = 390V, V = 15V
CE GE
T
= 125 C, L = 500µH, V = 390V, V = 15V
G
J
CE
GE
E
= E
+ E
TOTAL
ON2 OFF
E
= E
+ E
ON2 OFF
TOTAL
I
= 24A
CE
ICE = 24A
1
I
= 12A
= 6A
CE
I
= 12A
CE
I
CE
I
= 6A
CE
0.1
1.0
10
100
, GATE RESISTANCE (Ω)
1000
150
25
50
75
100
125
o
R
T
, CASE TEMPERATURE ( C)
G
C
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
3.5
1.4
DUTY CYCLE < 0.5%, V = 10V
CE
FREQUENCY = 1MHz
PULSE DURATION = 250µs
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
CIES
ICE = 24A
ICE = 12A
ICE = 6A
COES
CRES
10
0
20
30
40
50
60
70
80
90
100
6
7
8
9
10
11
12
13
14
15
16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Typical Performance Curves (Continued)
0
10
0.50
0.20
0.10
t
1
P
D
-1
10
t
2
0.05
DUTY FACTOR, D = t / t
1
2
0.02
0.01
PEAK T = (P X Z
X R ) + T
J
D
θ
JC
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGP30N6S2D
DIODE TA49390
90%
OFF
10%
V
GE
E
ON2
E
L = 200mH
V
CE
RG = 10
Ω
90%
10%
+
-
I
CE
t
t
FGP30N6S2
d(OFF)I
VDD = 390V
rI
t
fI
t
d(ON)I
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
Handling Precautions for IGBTs
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM. td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
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QFET
SuperSOT™-6
SuperSOT™-8
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MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
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OPTOPLANAR™
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FASTr™
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DOME™
EcoSPARK™
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EnSignaTM
FACT™
QS™
QT Optoelectronics™ TINYOPTO™
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RapidConfigure™
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CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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