FGD2040G3-F085 [ONSEMI]
IGBT, EcoSPARK® 3 200mJ, 400V, N-Channel Ignition;
| 型号： | FGD2040G3-F085 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, EcoSPARK® 3 200mJ, 400V, N-Channel Ignition 双极性晶体管 |
| 文件： | 总6页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
EcoSPARKꢀ 3 Ignition IGBT
200 mJ, 400 V, N-Channel Ignition
IGBT
200 mJ, 400 V
CE(on) = 1.6 V
@ IC = 6 A, VGE = 4 V
V
Product Preview
COLLECTOR
FGD2040G3-F085
Features
R
1
• SCIS Energy = 200 mJ at T = 25°C
J
GATE
• Low Saturation Voltage
R
2
• Logic Level Gate Drive
• AEC−Q101 Qualified and PPAP Capable
EMITTER
• RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits
• High Current Ignition System
• Coil on Plug Applications
4
2
1
3
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
DPAK (SINGLE GAUGE)
CASE 369C
Symbol
Parameter
Value
Units
BV
Collector−to−Emitter Breakdown
Voltage (I = 1 mA)
400
V
CER
C
BV
Emitter−to−Collector Voltage − Reverse
28
V
mJ
mJ
A
ECS
MARKING DIAGRAM
Battery Condition (I = 10 mA)
C
E
ISCIS = 11.5 A, L = 3.0 mHy,
200
125
23.6
13.6
SCIS25
AYWW
FGD
2040G3
R
= 1 KW, T = 25°C (Note 1)
GE
C
E
ISCIS = 9.1 A, L = 3.0 mHy,
= 1 KW, T = 150°C (Note 2)
SCIS150
R
GE
C
I
Collector Current Continuous
A
Y
WW
= Assembly Location
= Year
= Work Week
C25
at V = 5.0 V, T = 25°C
GE
C
I
Collector Current Continuous
at V = 5.0 V, T = 110°C
A
C110
FGD2040G3 = Device Code
GE
C
V
Gate−to−Emitter Voltage Continuous
Power Dissipation Total, T = 25°C
10
125
V
W
GEM
P
D
C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
Power Dissipation Derating, T > 25°C
0.83
W/°C
°C
C
T , T
Operating Junction and Storage
Temperature Range
−55 to 175
J
STG
T
L
Lead Temperature for Soldering
Purposes (1/8″ from case for 10 s)
300
°C
T
Reflow soldering according to JESD020C
260
4
°C
PKG
ESD
HBM − Electrostatic Discharge Voltage
at 100 pF, 1500 W
kV
2
kV
CDM − Electrostatic Discharge Voltage
at 1 W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self Clamped inductive Switching Energy (ESCIS25) of 200 mJ is based on
the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 11.5 A, V
J
CC
= 100 V during inductor charging and V = 0 V during time in clamp.
CC
2. Self Clamped inductive Switching Energy (ESCIS150) of 125 mJ is based on
This document contains information on a product under
development. onsemi reserves the right to change or
discontinue this product without notice.
the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 9.1 A, V
=
J
CC
100 V during inductor charging and V = 0 V during time in clamp.
CC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. P0
FGD2040G3−F085/D
FGD2040G3−F085
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction−to−Case – Steady State (Drain)
R
1.2
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
BV
BV
Collector−to−Emitter Breakdown Voltage
Collector−to−Emitter Breakdown Voltage
Emitter−to−Collector Breakdown Voltage
I
= 2 mA, V = 0 V,
370
390
28
−
−
−
430
450
−
V
V
V
CER
CES
ECS
GES
CE
GE
R
= 1 kW, T = −40 to 150°C
GE
J
I
= 10 mA, V = 0 V,
GE
CE
R
= 0, T = −40 to 150°C
GE
J
I
= −75 mA, V = 0 V,
GE
CE
T = 25°C
J
BV
I
Gate−to−Emitter Breakdown Voltage
Collector−to−Emitter Leakage Current
I
=
2 mA
T = 25°C
12
−
14
−
−
25
1
V
GES
V
= 250 V
= 1 kW
mA
mA
mA
CER
CE
GE
J
R
T = 150°C
J
−
−
I
Emitter−to−Collector Leakage Current
V
EC
= 24 V
T = 25°C
J
−
−
1
ECS
T = 150°C
J
−
−
40
−
R
R
Series Gate Resistance
Series Gate Resistance
−
144
−
W
W
1
2
10K
26K
ON CHARACTERISTICS
V
V
Collector−to−Emitter Saturation Voltage
Collector−to−Emitter Saturation Voltage
I
= 6 A, V = 4 V, T = 25°C
−
−
1.34
1.86
1.6
2.1
V
V
CE(SAT)
CE(SAT)
CE
GE
J
I
= 10 A, V = 4.5 V, T = 150°C
GE J
CE
DYNAMIC CHARACTERISTICS
Q
Gate Charge
I
= 10 A, V = 12 V, V = 5 V
−
1.3
0.75
−
14.9
1.6
1.2
4.3
−
2.2
1.8
−
nC
V
G(ON)
CE
CE
GE
V
Gate−to−Emitter Threshold Voltage
I
V
= 1 mA
T = 25°C
J
GE(TH)
CE
= V
CE
GE
T = 150°C
J
V
Gate−to−Emitter Plateau Voltage
V
CE
= 12 V, I = 10 A
V
GEP
CE
SWITCHING CHARACTERISTICS
td
Current Turn−On Delay Time−Resistive
Current Rise Time−Resistive
V
= 14 V, R = 1 W, V = 5 V,
−
−
−
−
0.4
1.6
2.9
3.7
1
3
6
8
ms
(ON)R
CE
L
GE
R
= 470 W, T = 25°C
G
J
t
rR
td
(OFF)L
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
V
= 300 V, L = 1 mH, V = 5 V,
CE GE
R
= 470 W, I = 6.5 A, T = 25°C
G
CE
J
t
fL
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DEVICE ORDERING INFORMATION
†
Device
Package
Shipping
FGD2040G3−F085
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FGD2040G3−F085
TYPICAL CHARACTERISTICS
100
25
SCIS Curves valid for V
Voltages of < 430 V
SCIS Curves valid for V
Voltages of < 430 V
clamp
clamp
R
= 1 KW, V = 5 V, V = 100 V
R = 1 KW, V = 5 V, V = 100 V
G GE CE
G
GE
CE
20
15
10
T = 25°C
J
T = 150°C
J
10
T = 25°C
J
T = 150°C
J
5
0
1
1
10
100
1000
0
3
6
9
12
15
t , TIME IN CLAMP (ms)
CLP
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.75
1.55
1.35
1.15
2.85
2.65
2.45
2.25
2.05
1.85
1.65
1.45
1.25
V
= 3.7 V
GE
V
= 3.7 V
4.5 V
GE
4.0 V
4.5 V
5.0 V
6.0 V
8.0 V
5.0 V
6.0 V
8.0 V
0.95
0.75
I
= 6 A
CE
1.05
0.85
I
= 10 A
CE
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Collector−to−Emitter On−State
Figure 4. Collector−to−Emitter On−State
Voltage vs. Junction Temperature
Voltage vs. Junction Temperature
30
25
20
15
10
30
25
20
15
10
V
GE
= 8.0 V
V
GE
= 8.0 V
5.0 V
4.5 V
5.0 V
4.5 V
4.0 V
3.7 V
4.0 V
3.7 V
5
0
5
0
T = −40°C
T = 25°C
J
J
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. Collector−to−Emitter On−State
Figure 6. Collector−to−Emitter On−State
Voltage vs. Collector Current
Voltage vs. Collector Current
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3
FGD2040G3−F085
TYPICAL CHARACTERISTICS
30
25
20
15
10
30
V
GE
= 8.0 V
T
= −40°C
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
= 5 V
A
25
20
15
10
V
CE
T
A
= 25°C
5.0 V
4.5 V
4.0 V
T
A
= 175°C
3.7 V
5
0
5
0
T = 175°C
J
0
1
2
3
4
5
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5 5.0
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
GE
, GATE−TO−SOURCE VOLTAGE (V)
Figure 7. Collector−to−Emitter On−State
Figure 8. Transfer Characteristics
Voltage vs. Collector Current
25
20
15
10
8
I
= 10 A
V
GE
= 5.0 V
CE
T = 25°C
J
6
V
CE
= 6 V
V
CE
= 12 V
10
4
5
0
2
0
25
50
75
100
125
150
175
0
4
8
Q , GATE CHARGE (nC)
12
16
T , CASE TEMPERATURE (°C)
C
G
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
2.0
1.8
1.6
1.4
100
10
1
I
V
= 1 mA
CE
= V
CE
GE
V
= 300 V
CES
V
= 250 V
CES
0.1
0.01
1.2
1.0
V
= 24 V
0
CES
0.001
−50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
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4
FGD2040G3−F085
TYPICAL CHARACTERISTICS
10
8
1500
f = 1 MHz
Resistive t
ON
OFF
OFF
1250
1000
Inductive t
Resistive t
6
C
C
IES
750
500
4
OES
2
0
250
0
C
RES
25
50
75
100
125
150
175
0
5
10
15
20
25
10,000
1
T , JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR−TO−EMITTER (V)
J
Figure 13. Switching Time vs. Junction
Temperature
Figure 14. Capacitance vs.
Collector−to−Emitter Voltage
420
I
= 10 mA
CER
410
400
T
= −40°C
A
390
380
T
= 25°C
A
T
A
= 175°C
10
100
1000
R , SERIES GATE RESISTANCE (W)
G
Figure 15. Break Down Voltage vs. Series Resistance
2
1
0.5 Duty Cycle
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction−to−Case
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5
FGD2040G3−F085
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
D
E
C
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
b2 0.028 0.045
b3 0.180 0.215
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 90ꢁ CW
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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