FGH40T120SMD-F155 [ONSEMI]
IGBT，1200V，40A，场截止沟槽;
| 型号： | FGH40T120SMD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，40A，场截止沟槽 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
1200 V, 40 A
FGH40T120SMD,
FGH40T120SMD-F155
Description
www.onsemi.com
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
C
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
G
• Low Saturation Voltage: V
= 1.8 V @ I = 40 A
C
E
E
CE(sat)
• 100% of the Parts tested for I (1)
LM
• High Input Impedance
C
G
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC applications
TO−247−3LD
CASE 340CH
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40T120
SMD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40T120SMD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
July, 2021 − Rev. 5
FGH40T120SMD/D
FGH40T120SMD, FGH40T120SMD−F155
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
V
CES
V
GES
1200
25
V
30
V
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
I
80
40
A
C
Collector Current
A
Clamped Inductive Load Current
Pulsed Collector Current
I
(Note 1)
(Note 2)
160
A
LM
I
160
A
CM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
T
T
= 25°C
I
80
A
C
F
= 100°C
40
A
C
I
240
A
FM
T
T
= 25°C
P
555
W
W
°C
°C
°C
C
D
Maximum Power Dissipation
= 100°C
277
C
Operating Junction Temperature
Storage Temperature Range
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Vcc = 600 V,V = 15 V, I = 160 A, R = 10 W , Inductive Load
GE
C
G
2. Limited by Tjmax
THERMAL CHARACTERISTICS
Parameter
Symbol
(IGBT)
Typ
−
Max
0.27
0.89
40
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
R
R
ꢀ
JC
(Diode)
−
ꢀ
JC
Thermal Resistance, Junction to Ambient
R
−
ꢀ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH40T120SMD
FGH40T120SMD
TO−247−3
(PB−Free)
−
−
30
FGH40T120SMD
FGH40T120SMD−F155
TO−247−3
(Pb−Free)
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
GE
V
CE
V
GE
= 0 V, I = 250 ꢁ A
1200
−
−
−
−
V
CES
C
Collector Cut−Off Current
G−E Leakage Current
I
= V
, V = 0 V
−
−
250
400
ꢁ A
nA
CES
CES
GES
GE
I
= V
, V = 0 V
CE
GES
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 40 mA, V = V
GE
4.9
−
6.2
1.8
2.0
7.5
2.4
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V, T = 25°C
GE C
CE(sat)
= 40 A, V = 15 V, T = 175°C
−
GE
C
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2
FGH40T120SMD, FGH40T120SMD−F155
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
4300
180
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
100
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 600 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
40
47
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 10 ꢂ ꢃ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
475
10
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
2.7
1.1
3.8
40
mJ
mJ
mJ
ns
E
ts
t
t
V
= 600 V, I = 40 A,
= 10 ꢂ ꢃ V = 15 V,
GE
d(on)
CC C
R
G
tr
55
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
520
50
ns
d(off)
t
f
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
3.4
2.5
5.9
370
23
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 600 V, I = 40 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
210
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Diode Forward Voltage
Symbol
Test Conditions
I = 40 A, T = 25°C
Min
−
Typ
3.8
Max
4.8
−
Unit
V
V
FM
F
C
I = 40 A, T = 175°C
−
2.7
V
F
C
Diode Reverse Recovery Time
t
V
= 600 V, I = 40 A,
−
65
−
ns
A
rr
R
F
F
di /dt = 200 A/ꢁ s, T = 25°C
C
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
I
rr
−
7.2
−
Q
−
234
200
18.0
1800
−
nC
ns
A
rr
t
rr
I
rr
V
R
= 600 V, I = 40 A,
−
−
F
di /dt = 200 A/ꢁ s, T = 175°C
F
C
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
−
−
Q
−
−
nC
rr
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3
FGH40T120SMD, FGH40T120SMD−F155
TYPICAL PERFORMANCE CHARACTERISTICS
300
250
200
150
100
50
300
TC = 25oC
20V
TC = 175oC
17V
20V
15V
17V
250
200
15V
12V
150
12V
100
VGE
=10V
VGE=10V
50
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
4
160
Common Emitter
VGE = 15V
Common Emitter
GE = 15V
V
TC
25oC
TC = 175oC −−−
=
120
80
40
0
3
80A
40A
2
IC=20A
1
25
50
75
100
125
150
175
012345
Collector−Emitter Voltage, VCE [V]
Case Temperature TC [ oC]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 3. Typical Saturation Voltage
Characteristics
20
16
12
8
20
16
12
Common Emitter
T
Common Emitter
C = 175 o
C
= 25 oC
TC
80A
80A
40A
40A
8
IC=20A
IC=20A
4
4
0
0
8
12
16
GE[V]
20
0
4
8
12
16
20
0
4
Gate−Emitter Voltage, V
Gate−Emitter Voltage, VGE[V]
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs VGE
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4
FGH40T120SMD, FGH40T120SMD−F155
TYPICAL PERFORMANCE CHARACTERISTICS
200
6000
5000
4000
3000
2000
1000
VCC = 600V
load Current : peak of square wave
Common Emitter
VGE = 0V , f = 1MHz
TC = 25oC
Ciss
160
120
80
40
0
TC = 100oC
Coss
Crss
Duty cycle : 50%
TC = 100oC
Powe Dissipation = 277 W
1k
10k
100k
1M
1
10
Collector−Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
Figure 8. Load Current vs. Frequency
Figure 7. Capacitance Characteristics
1000
1000
tr
t
100
10
1
d(off)
100
10
1
td(on)
t
f
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
Common Emitter
VCC = 600V, VGE = 15V, IC = 40A
TC
oC
= 175o
,
TC
C
= 25
0
10
20
30
40
50
30
40
50
60
70
0
10
20
Gate Resistance, RG [W]
Gate Resistance, RG [W]
Figure 10. Turn−Off Characteristics vs.
Figure 9. Turn−On Characteristics vs. Gate
Collector Current
Resistance
tr
10
Eon
100
Eoff
td(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10W
TC = 25oC
TC = 175oC
IC
= 40A
TC = 25oC
TC = 175oC
10
0.1
10 20 30 40 50 60 70 80
Collector Current, IC [A]
0
10
20
30
40
50
60
70
Gate Resistance , RG [W]
Figure 12. Turn−On Characteristics vs.
Figure 11. Switching Loss vs. Gate Resistance
Collector Current
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5
FGH40T120SMD, FGH40T120SMD−F155
TYPICAL PERFORMANCE CHARACTERISTICS
1000
100
10
30
10
td(off)
Eon
Eoff
1
tf
Common Emitter
VGE = 15V, RG = 10
W
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V, RG = 10 W
TC = 25oC
,
TC = 175oC
1
0.1
10 20 30 40 50 60 70 80
[A]
20
40
60
80
Collector Current, IC
Collector Current, IC
[ ]
A
Figure 13. Turn−Off Characteristics vs.
Figure 14. Switching Loss vs. Collector
Current
Collector Current
15
12
9
IcMAX (Pulsed)
100
10 s
ꢁ
200V
400V
IcMAX (Continuous)
s
100ꢁ
1ms
10 ms
VCC = 600V
10
1
DC Operation
6
Single Nonrepetitive
Pulse Tc = 25 oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
3
Common Emitter
TC = 25oC
0
0
50 100 150 200 250 300 350 400
Gate Charge, Qg [nC]
0.1
1
10
100
1000
Collector−Emitter Voltage, VCE [V]
Figure 16. SOA Characteristics
Figure 15. Gate Charge Characteristics
10
di
di
/dt = 200 A/ s
ꢁ
F
100
s
ꢁ
/dt = 100 A/
F
10
1
TC = 25oC
TC = 175oC −−−
VR = 600 V, IF
= 40 A
TC = 25o
C
0
1
2
3
4
5
[A]
Foward Current, I
F
Forward Voltage, VF [V]
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
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6
FGH40T120SMD, FGH40T120SMD−F155
TYPICAL PERFORMANCE CHARACTERISTICS
100
90
80
70
60
50
400
VR = 600 V, IF = 40 A
TC = 25oC
300
di /dt = 200 A/
s
ꢁ
F
200
di /dt = 100 A/ s
ꢁ
di /dt = 100 A/
s
ꢁ
F
F
100
0
s
diF/dt = 200 A/ꢁ
VR = 600 V, IF = 40 A
TC = 25o
C
0
10
20
30
40
50
60
70
80
0
10
20 30
40
50 60
[A]
70
80
Forwad Current, I F
Forward Current, IF [A]
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
1
0.5
0.1
0.3
0.1
PDM
0.01
0.05
t1
t2
0.02
0.01
Duty Factor, D = t1/t2
single pulse
1E−5
Peak T = Pdm x Zthjc + TC
j
1E−3
1E−6
1E−4
1E−3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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