FGH40T120SMDL4 [ONSEMI]
IGBT，1200V，25A，FS 沟槽;
| 型号： | FGH40T120SMDL4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，25A，FS 沟槽 局域网 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - FS, Trench
1200 V, 40 A
FGH40T120SMDL4
Description
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer
the optimum performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
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V
I
C
CES
Features
1200 V
40 A
• FS Trench Technology, Positive Temperature Coefficient
• Excellent Switching Performance due to Kelvin Emitter Pin
C
• Low Saturation Voltage: V
= 1.8 V @ I = 40 A
C
CE(sat)
• 100% of the Parts Tested for I
• High Input Impedance
LM
E1: Kelvin Emitter
E2: Power Emitter
G
• This Device is Pb−Free and is RoHS Compliant
E1
E2
Applications
• Solar Inverter, Welder, UPS and PFC Applications
C
E2
E1
G
TO−247−4LD
CASE 340CJ
MARKING DIAGRAM
$Y&Z&3&K
FGH40T120
SMDL4
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40T120SMDL4= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
December, 2019 − Rev. 2
FGH40T120SMDL4/D
FGH40T120SMDL4
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
FGH40T120SMDL4
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
1200
V
25
V
Transient Gate to Emitter Voltage
Collector Current
30
V
I
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
80
40
A
C
A
I
(Note 1)
(Note 2)
Clamped Inductive Load Current
Pulsed Collector Current
160
A
LM
I
160
A
CM
I
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
T
T
= 25°C
80
A
F
C
= 100°C
40
A
C
I
240
A
FM
P
T
T
= 25°C
555
W
W
°C
°C
°C
D
C
= 100°C
277
C
T
Operating Junction Temperature
Storage Temperature Range
−55 to +175
−55 to +175
300
J
T
STG
T
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 600 V, V = 15 V, I = 160 A, R = 20 W, Inductive Load.
CC
GE
C
G
2. Limited by Tjmax.
THERMAL CHARACTERISTICS
Symbol
Parameter
FGH75T65SQDT−F155
Unit
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.27
0.89
40
_C/W
_C/W
_C/W
q
JC
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FGH40T120SMDL4
FGH40T120SMDL4
TO−247−4LD
−
−
30
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2
FGH40T120SMDL4
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
Collector Cut−Off Current
V
GE
V
CE
V
GE
= 0 V, I = 250 mA
1200
−
−
−
−
V
CES
C
mA
nA
I
= V
= V
, V = 0 V
−
−
250
400
CES
CES
GE
I
G−E Leakage Current
, V = 0 V
CE
GES
GES
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
= 40 mA, V = V
GE
4.9
6.2
1.8
7.5
2.4
V
V
GE(th)
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V,
−
CE(sat)
C
T
GE
= 25 °C
C
−
2.0
−
V
I
= 40 A, V = 15 V,
GE
C
C
T
= 175°C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
4300
180
−
−
−
pF
pF
pF
CE
GE
ies
f = 1MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
100
res
SWITCHING CHARACTERISTICS
V
= 600 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
44
42
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
464
24
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
2.24
1.02
3.26
mJ
mJ
mJ
on
off
E
E
ts
V
= 600 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
42
48
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
518
24
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
3.11
2.01
5.12
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 600 V, I = 40 A,
Q
Total Gate Charge
−
−
−
370
23
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
210
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40T120SMDL4
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
−
Typ
3.8
Max
4.8
−
Unit
I = 40 A
F
T
= 25°C
V
V
FM
Diode Forward Voltage
C
C
T
= 175°C
−
2.7
V
= 600 V, I = 40 A
F
ns
A
T
Diode Reverse Recovery Time
R
−
65
−
rr
di /dt = 200 A/ms, T = 25°C
F
C
I
rr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
−
7.2
−
nC
ns
A
Q
−
234
200
18.0
1800
−
rr
V
R
= 600 V, I = 40 A
T
rr
F
−
−
di /dt = 200 A/ms, T = 175°C
F
C
I
rr
−
−
nC
Q
−
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS
300
250
200
150
100
50
300
TC = 25oC
TC = 175oC
17V
20V
20V
15V
17V
250
200
15V
12V
150
12V
100
VGE=10V
VGE=10V
50
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 1. Typical Output
Characteristics
Figure 2. Typical Output
Characteristics
160
120
80
40
0
4
3
2
1
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC
=
25oC
TC = 175oC −−−
80A
40A
IC=20A
0
1
2
3
4
5
25
50
75
100
125
150
175
Case Temperature TC[oC]
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
80A
80A
40A
12
40A
8
IC=20A
IC=20A
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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5
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
15
6000
5000
4000
3000
2000
1000
Common Emitter
V
T
= 0 V, f = 1Mhz
GE
= 25 ꢀ C
C
Cies
12
9
200V
400V
VCC = 600V
6
Coes
Crss
3
Common Emitter
TC = 25oC
0
1
10
0
50 100 150 200 250 300 350 400
Gate Charge, Qg [nC]
Collector−Emitter Voltage, VCE [V]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
300
10000
1000
100
10
tr
td(off)
100
td(on)
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
1
0
10
20
30
40
50
[W]
60
70
0
10
20
30
40
50
[W]
60
70
Gate Resistance, RG
Gate Resistance, RG
Figure 9. Turn−on Characteristics vs.
Figure 10. Turn−off Characteristics
Gate Resistance
vs. Gate Resistance
300
100
8
Eon
tr
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
Common Emitter
td(on)
VGE = 15V, RG = 10W
1
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
10
10
0.5
20
30
40
50
60
70
80
0
10
20
30
40
50
[W]
60
70
Gate Resistance, RG
Collector Current, IC [A]
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn−on Characteristics
vs. Collector Current
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6
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10
1000
100
10
Eon
td(off)
Eoff
1
tf
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VGE = 15V, RG = 10
W
W
TC = 25oC
TC = 25oC
TC = 175oC
TC = 175oC
0.1
10
1
10
20
30
40
50
60
70
80
20
30
40
50
60
70
80
Collector Current, I C [A]
Collector Current, IC [A]
Figure 13. Turn−off Characteristics
Figure 14. Switching Loss
vs. Collector Current
vs. Collector Current
200
160
120
80
VCC = 600V
IcMAX (Pulsed)
load Current : peak of square wave
100
10
10ms
100ms
1ms
10 ms
IcMAX (Continuous)
TC = 100oC
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25 ꢀ C
0.1
Duty cycle : 50%
TC = 100 oC
40
Curves must be derated
linearly with increase
in temperature
Power Dissipation = 277 W
0.01
0
1k
10k
100k
1M
0.1
1
10
100
1000
Collector−Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
21
18
15
12
9
TC = 25oC
TC = 175oC
ms
diF/dt = 200A/
100
10
1
ms
diF/dt = 100A/
ms
diF/dt = 200A/
diF/dt = 100A/
6
ms
TC = 25oC
TC = 175oC −−−
3
0
0
1
2
3
4
5
0
20
40
60
80
Forward Voltage, VF[V]
Forward Current, IF[A]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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7
FGH40T120SMDL4
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3000
360
300
240
180
120
60
TC = 25oC
C = 175oC ---
TC = 25oC
TC = 175oC ---
2500
2000
1500
1000
500
T
di/dt = 100A/
ms
di/dt = 100A/
ms
ms
di/dt = 200A/
ms
di/dt = 200A/
0
0
0
20
40
60
80
0
20
40
60
80
Forward Curren,t, I [A]
Forward Curren,t, I [A]
F
F
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
1
0.5
0.1
0.3
0.1
PDM
0.01
0.05
t1
t2
0.02
0.01
Duty Factor, D = t1/t2
single pulse
Peak T = Pdm x Zthjc + T
j
C
1E−3
1E−6
1E−5
1E−4
1E−3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.1
0.01
1E−3
0.05
0.02
0.01
PDM
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + T
j
C
1E−5
1E−4
1E−3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
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DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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