FGH4L75T65MQDC50 [ONSEMI]
650V Field stop 4th generation mid speed IGBT with co-pack SiC diode ;型号: | FGH4L75T65MQDC50 |
厂家: | ONSEMI |
描述: | 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode 双极性晶体管 |
文件: | 总9页 (文件大小:310K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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IGBT - Power, Co-PAK
N-Channel, Field Stop IV, MQ
(Medium Speed), TO247-4L
650 V, 1.45 V, 75 A
BV
V
I
C
CES
CE(sat)
650 V
1.45 V
75 A
PIN CONNECTIONS
C
FGH4L75T65MQDC50
E1: Kelvin Emitter
E2: Power Emitter
Using the novel field stop 4th generation IGBT technology and
generation 1.5 SiC Schottky Diode technology in TO−247 4−lead
package, FGH4L75T65MQDC50 offers the optimum performance
with both low conduction and switching losses for high−efficiency
operations in various applications, especially totem pole bridgeless
PFC and Inverter.
G
E1
E2
Features
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 75 A
C
CE(Sat)
TO−247−4LD
CASE 340CJ
• No Reverse Recovery / No Forward Recovery
• Tight Parameter Distribution
• RoHS Compliant
MARKING DIAGRAM
Applications
• Charging Station (EVSE)
• UPS, ESS
• Solar Inverter
• PFC, Converters
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol Value
Unit
$Y&Z&3&K
G75T65
MQDC50
V
V
V
650
20
CES
GES
Transient Gate−to−Emitter Voltage
p
30
(t < 0.5 ms, D < 0.001)
Collector Current
I
A
W
A
T
= 25°C (Note 1)
110
75
C
C
T
= 100°C
= 25°C
C
Power Dissipation
P
D
T
385
192
300
300
60
C
T
C
= 100°C
$Y
= onsemi Logo
Pulsed Collector Current
Diode Forward Current
T
T
= 25°C (Note 2)
= 25°C (Note 3)
25°C (Note 1)
I
LM
C
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
I
C
CM
I
A
T
F
C =
G75T65MQDC50 = Specific Device Code
T
100°C
25°C
50
C =
Pulsed Diode Maximum
Forward Current
T
I
200
A
C =
FM
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T ,
STG
−55 to
°C
°C
J
T
+175
Device
Package
Shipping
Maximum Lead Temperature for Soldering
Purposes
T
L
260
FGH4L75T65MQDC50 TO−247 30 Units / Tube
−4LD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V = 400 V, V = 15 V, I = 300 A, Inductive Load, 100% tested
CC
GE
C
3. Repetitive rating: pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
FGH4L75T65MQDC50/D
October, 2022 − Rev. 0
FGH4L75T65MQDC50
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.39
0.74
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
°C/W
q
JC
R
q
JCD
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage,
Gate−emitter Short−circuited
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
−
0.5
V/°C
GE
C
DBV
CES
DT
J
Collector−emitter Cut−off Current,
Gate−emitter Short−circuited
V
= 0 V, V = 650 V
I
−
−
−
−
250
400
mA
GE
CE
CES
Gate Leakage Current, Collector−emitter
Short−circuited
V
= 20 V, V = 0 V
I
nA
GE
CE
GES
ON CHARACTERISTICS
Gate−emitter Threshold Voltage
Collector−emitter Saturation Voltage
V
= V , I = 75 mA
V
GE(th)
3.0
−
4.5
6.0
1.8
−
V
V
GE
CE
C
V
= 15 V, I = 75 A, T = 25°C
V
CE(sat)
1.45
1.65
GE
C
J
V
GE
= 15 V, I = 75 A, T = 175°C
−
C
J
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
4770
619
13
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Charge Total
C
res
V
CC
= 400 V, I = 75 A, V = 15 V
Q
146
26
C
GE
g
Gate−to−emitter Charge
Gate−to−collector Charge
Q
Q
ge
gc
34
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 25°C, V = 400 V,
t
d(on)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
16
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
CC
I
= 37.5 A, R = 10 W,
C
GE
G
t
r
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
t
192
16
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.31
0.49
0.81
29
mJ
ns
E
ts
T = 25°C, V = 400 V,
t
t
J
C
GE
CC
G
d(on)
I
= 75 A, R = 10 W,
t
r
27
V
= 15 V, Inductive Load
Turn−off Delay Time
Fall Time
187
18
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
E
0.72
0.96
1.68
mJ
on
off
E
E
ts
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2
FGH4L75T65MQDC50
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time
Rise Time
T = 175°C, V = 400 V,
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
I
CC
d(on)
= 37.5 A, R = 15 W,
C
GE
G
t
r
V
= 10 V, Inductive Load
Turn−off Delay Time
Fall Time
220
72
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
Turn−on Delay Time
Rise Time
E
on
E
off
0.41
0.82
1.23
27
mJ
ns
E
ts
T = 175°C, V = 400 V,
t
t
J
CC
G
d(on)
I
= 75 A, R = 15 W,
C
t
r
34
V
= 10 V, Inductive Load
GE
Turn−off Delay Time
Fall Time
202
54
d(off)
t
f
Turn−on Switching Loss
Turn−off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
0.91
1.30
2.20
mJ
E
ts
I = 50 A, T = 25°C
V
F
−
−
−
−
1.46
1.83
210
202
1.7
−
V
F
J
I = 50 A, T = 175°C
F
J
Total Capacitance
V
V
= 400 V, f = 1 MHz, T = 25°C
C
−
pF
R
J
= 600 V, f = 1 MHz, T = 25°C
−
R
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH4L75T65MQDC50
TYPICAL CHARACTERISTICS
300
300
240
T = 25°C
T = 175°C
J
20 V
J
10 V
20 V
V
GE
= 8 V
240
180
120
60
15 V
12 V
10 V
15 V
12 V
V
GE
= 8 V
180
120
60
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
240
180
120
60
150
100
50
T = 25°C
J
Common Emitter
= 20 V
V
GE
= 15 V
T = 175°C
J
V
CE
T = 25°C
J
T = 175°C
J
0
0
0
1
2
3
4
5
0
2
4
6
8
10
12
14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
2.5
10000
1000
100
Common Emitter
C
iss
V
GE
= 15 V
I
= 150 A
C
2.0
1.5
1.0
C
oss
I
I
= 75 A
= 40 A
C
C
rss
10
1
C
V
GE
= 0 V
f = 1 MHz
−100
−50
0
50
100
150
200
0.1
1
10
30
T , COLLECTOR−EMITTER JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Junction
Temperature at Various Current Level
Figure 6. Capacitance Variation
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4
FGH4L75T65MQDC50
TYPICAL CHARACTERISTICS
15
12
1000
Common Emitter
= 75 A
I
C
100
V
CC
= 200 V
10 ms
100 ms
9
6
3
0
10
V
= 400 V
= 300 V
CC
V
CC
10 ms
1 ms
*Notes:
1. T = 25°C
1
C
2. T = 175°C
J
DC
3. Single Pulse
0.1
1
0
0
10
100
1000
0
20
40
60
80
100
Q , GATE CHARGE (nC)
V
, COLLECTOR−EMITTER VOLTAGE (V)
G
CE
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
100
1000
t
Common Emitter
d(on)
Common Emitter
V
V
I
= 400 V
= 15 V
= 75 A
V
V
I
= 400 V
= 15 V
= 75 A
CC
CC
GE
GE
C
C
T = 25°C
J
t
d(off)
T = 175°C
J
t
100
10
r
t
f
T = 25°C
J
T = 175°C
J
10
0
10
20
30
40
50
10
20
30
40
50
R , GATE RESISTANCE (W)
G
R , GATE RESISTANCE (W)
G
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
1000
100
1000
Common Emitter
Common Emitter
V
V
= 400 V
= 15 V
= 10 W
V
V
= 400 V
= 15 V
CC
CC
GE
GE
R
R
= 10 W
G
G
t
d(off)
T = 25°C
J
100
10
t
r
T = 175°C
J
t
f
10
1
t
d(on)
T = 25°C
J
T = 175°C
J
0
30
60
90
120
150
30
60
90
120
150
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−on Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
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5
FGH4L75T65MQDC50
TYPICAL CHARACTERISTICS
10
10
Common Emitter
Common Emitter
E
off
E
off
V
CC
V
GE
= 400 V
= 15 V
V
V
= 400 V
= 15 V
CC
GE
I
C
= 75 A
I = 75 A
C
R
= 10 W
G
1
1
E
on
E
on
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
0.1
0.1
0
10
20
30
40
50
0
30
60
90
120
150
R , GATE RESISTANCE (W)
G
I , COLLECTOR CURRENT (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
200
175
150
125
100
75
10,000
1000
T = 25°C
J
100
10
T = 175°C
J
50
25
0
0
1
10
100
650
0
0.5
1
1.5
2
2.5
3
3.5
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 15. Forward Diode Characteristics
Figure 16. (Diode) Output Capacitance (Coes)
vs. Reverse Voltage
50
40
30
20
10
0
0
100
200
300
400
500
600
V , REVERSE VOLTAGE (V)
R
Figure 17. Output Capacitance Stored Energy
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6
FGH4L75T65MQDC50
TYPICAL CHARACTERISTICS
1
0.1
0.5 Duty Cycle
0.2
0.1
Duty Factor, D = t /t
1
2
0.05
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
0.02
0.01
R
R
2
1
t
1
0.01
t
2
C = t / R
C = t / R
2 2 2
1
1
1
0.001
0.0001
Single Pulse
1
2
3
4
ri [K/W]: 0.0138
T [s]:
0.0729
0.0634
0.0945
2.2E−05 9.26E−05 5.85E−04 3.34E−3
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 18. Transient Thermal Impedance of IGBT
1
0.5 Duty Cycle
0.2
0.1
0.1
Duty Factor, D = t /t
1
2
0.05
0.02
P
i:
DM
Peak T = P
x Z
+ T
q
J
DM
JC C
R
R
2
1
t
1
0.01
t
2
0.01
Single Pulse
C = t / R
C = t / R
2 2 2
1
1
1
1
2
3
4
ri [K/W]: 0.0329
T [s]: 9.5206
0.1042
0.1443
0.1303
1.39E−04 4.82E−04 2.16E−03
0.001
−6
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
RECTANGULAR PULSE DURATION (sec)
Figure 19. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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