FGH75T65SHDT-F155 [ONSEMI]
IGBT，650V，75A 场截止沟槽;
| 型号： | FGH75T65SHDT-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，75A 场截止沟槽 双极性晶体管 |
| 文件： | 总9页 (文件大小：2192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65SHDT
Description
Using novel field stop IGBT technology, onsemi’s new series of
field stop 3 generation IGBTs offer the optimum performance for
solar inverter, UPS, welder, telecom, ESS and PFC applications where
low conduction and switching losses are essential.
rd
E
C
G
Features
• Maximum Junction Temperature: T =175°C
J
TO−247−3LD
CASE 340CH
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
= 1.6 V(Typ.) @ I = 75 A
C
• 100% of the Parts Tested for I (Note 1)
CE(sat)
MARKING DIAGRAMS
LM
• High Input Impedance
• Fast Switching
$Y&Z&3&K
FGH75T65
SHDT
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
$Y
= onsemi Logo
&Z
= Assembly Plant Code
&3
&K
= Numeric Date Code
= Lot Code
FGH75T65SHDT
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
Spetember, 2021 − Rev. 4
FGH75T65SHDT/D
FGH75T65SHDT
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
C
Parameter
Collector to Emitter Voltage
Symbol
FGH75T65SHDT−F155
Unit
V
V
CES
V
GES
650
20
Gate to Emitter Voltage
V
Transient Gate to Emitter Voltage
30
V
Collector Current
T
T
T
= 25°C
= 100°C
= 25°C
I
150
A
C
C
C
C
Collector Current
75
A
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
Diode Forward Current
I
225
A
LM
I
225
A
CM
T
T
= 25°C
I
125
A
C
F
Diode Forward Current
= 100°C
75
A
C
Pulsed Diode Maximum Forward Current (Note 2)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
I
225
A
FM
T
T
= 25°C
P
455
W
W
°C
°C
°C
C
D
= 100°C
227
C
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 225 A, R = 20 ꢀ, Inductive Load
CC
GE
C
G
2. Repetitive Rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Symbol FGH75T65SHDT−F155
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case, Max. (IGBT)
Thermal Resistance, Junction to Case, Max. (Diode)
Thermal Resistance, Junction to Ambient, Max.
R
ꢁ
JC
R
ꢁ
JC
R
ꢁ
JA
0.33
0.65
40
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH75T65SHDT−F155
FGH75T65SHDT
TO−247−3LD
Tube
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
GE
= 0 V, I = 1 mA
650
−
−
V
CES
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/ꢂ T
I = 1 mA, Reference to 25°C
C
0.6
V/°C
CES
J
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
ꢃ
A
CES
CE
CES
GE
I
, V = 0 V
400
nA
GES
GE
GES
CE
ON CHARACTERISTICS
G−E Threshold Voltage
V
I
C
I
C
I
C
= 75 mA, V = V
GE
4.0
−
5.5
1.6
7.5
2.1
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 75 A, V = 15 V
GE
CE(sat)
= 75 A, V = 15 V, T = 175°C
−
2.28
GE
C
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2
FGH75T65SHDT
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
3680
179
43
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 75 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
28
61
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
G
C
R
= 3 ꢀ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
86
ns
d(off)
t
f
16
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
3
mJ
mJ
mJ
ns
0.75
3.75
27
E
ts
t
t
V
= 400 V, I = 75 A,
= 3 ꢀ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
62
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
93
ns
d(off)
t
f
16
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
4.7
1.03
5.73
123
22.6
44.9
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
= 400 V, I = 75 A, V = 15 V
g
CE C GE
Q
ge
gc
Q
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Parameter
Diode Forward Voltage
Symbol
Test Conditions
Min
−
Typ
1.8
Max
2.1
−
Unit
V
FM
I = 75 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
V
F
= 175°C
= 175°C
= 25°C
−
1.7
Reverse Recovery Energy
E
rec
I = 75 A,
−
160
76
−
ꢃ
J
F
dI /dt = 200 A/ꢃ s
F
Diode Reverse Recovery Time
t
rr
−
−
ns
= 175°C
= 25°C
−
270
206
2199
−
Diode Reverse Recovery Charge
Q
−
−
nC
rr
= 175°C
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH75T65SHDT
TYPICAL PERFORMANCE CHARACTERISTICS
225
200
225
200
150
100
50
150
100
50
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
4
3
2
1
225
200
150
100
50
0
5
0
0
1
2
3
4
−50
50
100
150
V
CE
, Collector−Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
20
16
16
12
8
12
8
4
4
0
0
20
20
4
8
12
16
4
8
12
16
V
GE
, Gate−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs VGE
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4
FGH75T65SHDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
15
12
9
10000
1000
100
6
3
0
10
30
0
25
125
1
10
50
75
100
V
CE
, Collector−Emitter Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
200
100
1000
100
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (ꢀ)
G
R , Gate Resistance (ꢀ)
G
Figure 9. Turn−On Characteristics
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
vs. Gate Resistance
100
10
10
5
1
0.5
15
30
45
60
75
0
10
20
30
40
50
I , Collector Current (A)
C
R , Gate Resistance (ꢀ)
G
Figure 12. Turn−On Characteristics
Figure 11. Switching Loss vs. Gate
Resistance
vs. Collector Current
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5
FGH75T65SHDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
200
100
6
1
10
1
0.1
0.05
15
45
60
75
15
30
45
60
75
30
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 14. Switching Loss vs. Collector
Current
Figure 13. Turn−Off Characteristics
vs. Collector Current
300
375
300
225
150
75
100
10
1
0.1
0
1M
1
100
, Collector−Emitter Voltage (V)
1000
1k
10k
100k
10
V
CE
f, Switching Frequency (Hz)
Figure 16. SOA Characteristics
Figure 15. Load Current vs. Frequency
200
24
18
12
6
100
10
1
0
2
3
0
1
0
10 20 30 40 50 60 70 80
V , Forward Voltage (V)
F
I , Forward Current (A)
F
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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6
FGH75T65SHDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
400
300
3000
2500
2000
1500
1000
500
0
200
100
0
0
10 20 30 40 50 60 70 80
0
10 20 30 40 50 60 70 80
I , Forward Current (A)
I , Forward Current (A)
F
F
Figure 20. Stored Charge
Figure 19. Reverse Recovery Time
0.6
0.1
0.01
1E−3
−2
−1
0
−5
−4
−3
10
Rectangular Pulse Duration (sec)
10
10
10
10
10
Figure 21. Transient Thermal Impedance of IGBT
1
0.1
0.01
0.005
−2
−1
0
−5
−4
−3
10
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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