FGHL50T65MQD [ONSEMI]
IGBT - 650 V 50 A FS4 medium switching speed IGBT;
| 型号： | FGHL50T65MQD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 50 A FS4 medium switching speed IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Field Stop Trench IGBT
650 V, 50 A
FGHL50T65MQD
Field stop 4th generation mid speed IGBT technology and full
current rated copak Diode technology.
Features
www.onsemi.com
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
BV
V
TYP
I MAX
C
CES
CE(sat)
650 V
1.45 V
50 A
• Low Saturation Voltage: V
= 1.45 V (Typ.) @ I = 50 A
C
CE(sat)
• 100% of the Parts are Tested for I (Note 2)
LM
C
E
• Smooth & Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
G
Typical Applications
• Solar Inverter
• UPS, ESS
• PFC, Converters
MAXIMUM RATINGS
Parameter
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Symbol
Value
650
20
Unit
V
G
V
CES
V
GES
V
GES
C
E
V
TO−247 LONG LEADS
Transient Gate−to−Emitter Voltage
Collector Current (Note 1)
30
V
CASE 340CX
T
C
= 25°C
I
C
80
A
T
C
= 100°C
50
MARKING DIAGRAM
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
I
200
200
55
A
A
A
LM
I
CM
T
T
= 25°C
= 65°C
I
F
C
&Z&3&K
FGHL
50T65MQD
40
C
Pulsed Diode Maximum Forward Current
I
200
A
A
FM
Non−Repetitive Forward Surge Current
I
F,SM
(Half−Sine Pulse, t = 8.3 ms, T = 25°C)
135
120
p
C
(Half−Sine Pulse, t = 8.3 ms, T = 150°C)
p
C
Maximum Power Dissipation
T
= 25°C
P
268
134
W
C
D
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
T
C
= 100°C
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
°C
stg
FGHL50T65MQD = Specific Device Code
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 5 s)
T
300
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
Device
Package
Shipping
FGHL50T65MQD TO−247−3L
30 Units / Rail
2. V = 400 V, V = 15 V, I = 200 A, R = 14 W, Inductive Load, 100% Tested
CC
GE
C
G
3. Repetitive rating: Pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2020 − Rev. 1
FGHL50T65MQD/D
FGHL50T65MQD
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.56
1.07
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
θJC
R
θJC
R
θJA
°C/W
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
0.6
−
−
V
V/°C
mA
GE
C
Temperature Coefficient of
Breakdown Voltage
= 0 V, I = 1 mA
DBV
/
−
GE
C
CES
J
DT
Collector−emitter cut−off current,
gate−emitter short−circuited
V
GE
= 0 V, V = 650 V
I
−
250
400
CE
CES
Gate leakage current, collector−emit-
ter short−circuited
V
GE
= 20 V, V = 0 V
I
−
−
nA
CE
GES
ON CHARACTERISTIC
Gate−emitter threshold voltage
Collector−emitter saturation voltage
V
= V , I = 50 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
= 15 V, I = 50 A
V
CE(sat)
−
−
1.45
1.77
1.8
−
GE
C
V
GE
= 15 V, I = 50 A, T = 175°C
C
J
DYNAMIC CHARACTERISTIC
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
3226
85
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
10
res
V
CE
= 400 V, I = 50 A, V = 15 V
Q
94
C
GE
g
Gate−to−Emitter charge
Gate−to−Collector charge
Q
Q
17
ge
gc
22
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
= 25°C
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
15
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V, I = 25 A
CC
C
Rise time
t
r
R
= 10 W
G
V
GE
= 15 V
Turn−off delay time
Fall time
t
128
50
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.41
0.31
0.72
23
mJ
ns
E
ts
T
C
= 25°C
t
t
d(on)
V
CC
= 400 V, I = 50 A
C
t
r
34
R
= 10 W
G
V
GE
= 15 V
Turn−off delay time
Fall time
120
46
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
1.05
0.70
1.75
mJ
E
ts
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2
FGHL50T65MQD
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
= 175°C
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
20
17
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
= 400 V, I = 25 A
CC
C
Rise time
t
r
R
V
= 10 W
GE
G
= 15 V
Turn−off delay time
Fall time
146
75
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
0.75
0.53
1.28
22
mJ
ns
E
ts
T
C
= 175°C
t
t
d(on)
V
CC
= 400 V, I = 50 A
C
t
r
36
R
V
= 10 W
GE
G
= 15 V
Turn−off delay time
Fall time
130
58
d(off)
Inductive Load
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTIC
Diode Forward Voltage
E
on
E
off
1.63
0.94
2.57
mJ
E
ts
I = 50 A, T = 25°C
I = 50 A, T = 175°C
V
−
−
2.45
2.2
2.75
−
V
F
C
C
FM
F
Reverse Recovery Energy
I = 50 A, dl /dt = 200 A/ms, T = 175°C
E
−
−
57
−
−
mJ
F
F
C
rec
Diode Reverse Recovery Time
I = 50 A, dl /dt = 200 A/ms, T = 25°C
T
rr
32
202
ns
F
F
C
I = 50 A, dl /dt = 200 A/ms, T = 175°C
F
F
C
Diode Reverse Recovery Charge
I = 50 A, dl /dt = 200 A/ms, T = 25°C
Q
rr
−
46
814
−
nC
F
F
C
I = 50 A, dl /dt = 200 A/ms, T = 175°C
F
F
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL50T65MQD
TYPICAL CHARACTERISTICS
200
150
100
200
20V
15V
20V
15V
T
C = 255C
TC
= 1755C
12V
10V
12V
10V
150
100
VGE = 8V
VGE = 8V
50
0
50
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, VCE [V]
[V]
Collector−Emitter Voltage, VCE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
3
2
200
150
100
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC
TC
= 25°C
= 175°C
100A
50A
50
0
IC = 25A
1
−100
−50
0
50
100
150
200
0
1
2
3
4
5
Collector−Emitter Voltage, V [V]
CE
Collector−Emitter Case Temperature, T [°C]
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
16
12
8
20
Common Emitter
TC = 25°C
Common Emitter
TC = 175°C
16
12
IC = 25A
50A
IC = 25A
8
50A
100A
4
0
100A
4
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE (TJ = 255C)
Figure 6. Saturation Voltage vs. VGE (TJ = 1755C)
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4
FGHL50T65MQD
TYPICAL CHARACTERISTICS (continued)
15
10000
1000
100
Common Emitter
TC
= 25°C
VCC = 200V
Cies
12
9
300V
400V
Coes
6
Cres
10
1
3
0
Common Emitter
VGE = 0V, f = 1Mhz
TC
= 25°C
1
10
Collector−Emitter Voltage, VCE [V]
0
20
40
60
80
100
30
Gate Charge, Qg [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
100
1000
td(off)
tr
100
tf
td(on)
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V,
IC = 50A
VCC = 400V, VGE = 15V
IC = 50A
TC
TC
T C
T C
= 25°C
= 175°C
= 25°C
= 175°C
10
10
50
5
15
25
35
45
10
20
30
Gate Resistance, Rg
40
[W]
50
Gate Resistance, Rg [ W]
Figure 9. Turn−On Characteristics
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
vs. Gate Resistance
500
100
Common Emitter
VCC = 400V, VGE = 15V,
RG = 10 W
TC = 25°C
TC = 175°C
td(off)
tr
100
tf
td(on)
10
1
Common Emitter
VCC = 400V, VGE = 15V,
RG = 10 W
TC
TC
= 25°C
= 175°C
10
25
50
75
100
125
150
25
50
75
100
125
150
Collector Current, IC [A]
[A]
Collector Current, IC
Figure 11. Turn−On Characteristics
Figure 12. Turn−Off Characteristics
vs. Collector Current
vs. Collector Current
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5
FGHL50T65MQD
TYPICAL CHARACTERISTICS (continued)
10
10000
Eon
Eon
1
1000
Eoff
Common Emitter
Common Emitter
Eoff
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
IC = 50A
RG = 10W
T
C = 25°C
TC
TC
= 25°C
= 175°C
TC = 175°C
0.1
100
25
50
75
100
125
150
10
20
30
Gate Resistance, R g
40
50
[ W]
[A]
Collector Current, IC
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
150
100
10
8
TC
= 25°C
TC = 175°C
di/dt = 200A/uS
TC=175°C
6
di/dt = 100A/uS
10
TC =75°C
4
di/dt = 200A/uS
di/dt = 100A/uS
TC =25°C
Common Emitter
TC
TC
TC
= 25°C
= 75°C
= 175°C
2
1
0
0
1
2
3
4
5
0
20
40
60
80
100
Forward Voltage, VF [V]
Forward Current, VF [V]
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
1200
900
350
TC
TC
= 25°C
= 25°C
TC= 175°C
TC= 175°C
280
210
140
600
300
0
di/dt = 200A/uS
di/dt = 100A/uS
di/dt = 200A/uS
di/dt = 100A/uS
70
0
0
30
60
90
0
30
60
90
Forward Current, VF [V]
Forward Current, V [V]
F
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
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6
FGHL50T65MQD
TYPICAL CHARACTERISTICS (continued)
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
0.01
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
Single Pulse
10−4
0.01
10−5
10−3
10−2
10 −1
10 0
10 1
Rectangular Pulse Duration [sec]
Figure 19. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.02
0.1
PDM
0.01
0.01
t1
Single Pulse
t2
Duty Factor, D = t1/t2
Peak T = Pdm x Zthjc + Tc
j
0.001
10−5
10−4
10−3
10−2
10−1
100
101
Rectangular Pulse Duration [sec]
Figure 20. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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