FGHL50T65SQDT [ONSEMI]
IGBT, 650 V, 50 A Field Stop Trench;
| 型号： | FGHL50T65SQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 650 V, 50 A Field Stop Trench 双极性晶体管 |
| 文件： | 总9页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
650 V, 50 A
Product Preview
FGHL50T65SQDT
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
www.onsemi.com
50 A, 650 V
V
CESat
= 1.47 V (Typ.)
Features
• Maximum Junction Temperature : T = 175°C
J
C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
= 1.47 V (Typ.) @ I = 50 A
C
• 100% of the Parts tested for I (1)
CE(Sat)
G
LM
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
E
• This Device is Pb−Free and is RoHS Compliant
Typical Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Table 1. MAXIMUM RATING
TO−247−3LD
CASE 340CX
Symbol
Rating
Value
Unit
V
V
CES
GES
Collector to Emitter Voltage
650
MARKING DIAGRAM
V
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
20
30
V
I
C
Collector Current
@ T = 25°C
100
50
A
C
@ T = 100°C
C
I
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
200
200
A
A
A
LM
ON AYWWZZ
FGHL50T65
SQDT
I
CM
I
F
Diode Forward Current
@ T = 25°C
75
50
C
@ T = 100°C
C
I
Pulsed Diode Maximum Forward Current
300
A
FM
P
D
Maximum Power Dissipation @ T = 25°C
268
134
W
C
@ T = 100°C
C
T , T
Operating Junction / Storage Temperature −55 to +175
°C
°C
J
STG
Range
FGHL50T65SQDT = Specific Device Code
T
L
Maximum Lead Temp. for Soldering
265
A
Y
= Assembly Location
= Year
Purposes, 1/8” from case for 5 seconds
WW
ZZ
= Work Week
= Assembly Lot Number
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 W, Inductive Load, 100% Tested
2. Repetitive rating: pulse width limited by max. Junction temperature
ORDERING INFORMATION
Device
Package
Shipping
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
FGHL50T65SQDT
TO−247−3L
30 Units / Rail
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2020 − Rev. P0
FGHL50T65SQDT/D
FGHL50T65SQDT
THERMAL CHARACTERISTICS
Symbol
Rating
Value
0.56
0.65
40
Unit
°C/W
°C/W
°C/W
R
q
JC
R
q
JC
R
q
JA
Thermal Resistance, Junction to Case, for IGBT
Thermal Resistance, Junction to Case, Max for Diode
Thermal Resistance, Junction to Ambient, Max
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
V
= 0 V, I = 1 mA
650
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown Voltage
= 0 V, I = 1 mA
−
0.6
V/°C
DBVCES
DTj
GE
C
I
Collector−emitter cut−off current, gate−emitter
short−circuited
V
V
= 0 V, V = V
CES
−
−
−
−
250
400
mA
CES
GE
CE
I
Gate leakage current, collector−emitter
short−circuited
= V
, V = 0 V
CE
nA
GES
GE
GES
ON CHARACTERISTICS
V
Gate−emitter threshold voltage
V
= V , I = 50 mA
2.6
4.5
6.4
V
V
GE(th)
GE
CE
C
V
Collector−emitter saturation voltage
V
GE
V
GE
= 15 V, I = 50 A
−
−
1.47
1.7
2.1
−
CE(sat)
C
= 15 V, I = 50 A, T = 175°C
C
c
DYNAMIC CHARACTERISTICS
C
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
3081
136
−
−
−
pF
ns
ies
CE
GE
C
Output capacitance
oes
C
Reverse transfer capacitance
10.8
res
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
t
Turn−on delay time
Rise time
T
C
= 25°C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
22.8
5.20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
VCC = 400 V, IC = 12.5 A
t
r
Rg = 4.7 W
V
GE
= 15 V
t
Turn−off delay time
Fall time
70
d(off)
Inductive Load
t
27.20
223
f
E
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
mJ
on
Eo
91.13
314.13
23.60
10.40
66.40
10.20
515.60
133
ff
E
ts
t
t
T
C
= 25°C
ns
d(on)
VCC = 400 V, IC = 25 A
t
r
Rg = 4.7 W
V
GE
= 15 V
Turn−off delay time
Fall time
d(off)
Inductive Load
t
f
E
E
Turn−on switching loss
Turn−off switching loss
Total switching loss
mJ
on
off
E
648.60
ts
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2
FGHL50T65SQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
t
t
Turn−on delay time
Rise time
T
= 175°C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
23.60
7.20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
d(on)
C
VCC = 400 V, IC = 12.5 A
t
r
Rg = 4.7 W
V
= 15 V
GE
Turn−off delay time
Fall time
87
d(off)
Inductive Load
t
f
72
E
on
E
off
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
259.20
221
mJ
E
ts
480.20
25.60
14.80
78
t
t
T
C
= 175°C
ns
d(on)
VCC = 400 V, IC = 25 A
t
r
Rg = 4.7 W
V
= 15 V
GE
Turn−off delay time
Fall time
d(off)
Inductive Load
t
f
42
E
on
E
off
Turn−on switching loss
Turn−off switching loss
Total switching loss
Total Gate Charge
Gate to Emitter Charge
Gate to collector Charge
578.90
406.80
985.70
99.7
mJ
E
ts
Qg
VCE = 400 V, IC = 50 A,
VGE = 15 V
nC
nC
nC
Qge
Qgc
18.3
25.90
DIODE CHARACTERISTICS
V
F
Forward voltage
I = 50 A, T = 25°C
−
−
2
1.6
2.6
−
V
F
c
I = 50 A, T = 175°C
F
c
Erec
Trr
Reverse Recovery Energy
Diode Reverse Recovery Time
I = 50 A, dl /dt = 200 A/ms,
−
80.14
−
mJ
nS
F
F
Tc=175°C
IF = 50 A, dl /dt = 200 A/ms
−
35.60
201
−
F
IF = 50 A, dl /dt = 200 A/ms,
F
Tc = 175°C
Qrr
Diode Reverse Recovery Charge
IF = 50 A, dl /dt = 200 A/ms
−
66.22
1135.65
−
nC
F
IF = 50 A, dl /dt = 200 A/ms,
F
Tc = 175°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGHL50T65SQDT
TYPICAL CHARACTERISTICS
200
200
150
20 V
15 V
12 V
10 V
20 V
15 V
12 V
10 V
150
100
50
V
= 8 V
GE
V
GE
= 8 V
100
50
0
T = 25°C
J
T = 175°C
J
0
0
1
2
3
4
5
0
1
2
3
4
CE
5
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
200
3
Common Emitter
Common Emitter
V
GE
= 15 V
V
GE
= 15 V
T = 25°C
T = 175°C
J
J
2,5
2
150
100
50
100 A
50 A
1,5
I
C
= 25 A
0
1
0
1
2
3
4
5
−100 −50
0
50
100 150 200
Collector−Emitter Voltage, V [V]
Collector−Emitter Case Temperature, T [°C]
CE
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
Common Emitter
T = 175°C
J
Common Emitter
T = 25°C
J
16
12
8
16
I
C
= 25 A
12
8
100 A
50 A
I
= 25 A
C
100 A
50 A
4
4
0
0
0
8
12
16
20
0
4
8
12
16
20
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
(TJ = 255C)
(TJ = 1755C)
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4
FGHL50T65SQDT
TYPICAL CHARACTERISTICS (continued)
15
10000
1000
100
10
Common Emitter
T = 25°C
C
ies
J
12
9
V
CC
= 200 V
C
oes
400 V
300 V
6
C
res
Common Emitter
= 0 V, f = 1 MHz
3
V
GE
T = 25°C
J
1
0
1
10
Collector−Emitter Voltage, V [V]
30
50
50
0
20
40
60
80
100
Gate Charge, Q [nC]
CE
g
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristic
1000
100
Common Emitter
= 400 V, V = 15 V
= 50 A
T = 25°C
T = 175°C
V
CC
GE
I
C
t
t
r
d(off)
J
J
t
d(on)
100
10
t
r
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 50 A
T = 25°C
J
T = 175°C
J
10
0
10
20
30
40
10
20
30
40
50
Gate Resistance, R [W]
Gate Resistance, R [W]
g
g
Figure 9. Turn−on Characteristics vs.
Figure 10. Turn−Off Characteristics vs.
Gate Resistance
Gate Resistance
200
5000
Common Emitter
V
CC
= 400 V, V = 15 V
= 4.7 W
T = 25°C
T = 175°C
GE
R
G
tr
Eon
100
J
J
1000
E
off
Common Emitter
V
CC
= 400 V, V = 15 V
GE
t
d(on)
I
C
= 50 A
T
T
= 25°C
= 175°C
J
J
10
100
0
30
60
90
120
150
0
10
20
30
40
Collector Current, I [A]
Gate Resistance, R [W]
C
g
Figure 11. Switching Loss vs Gate Resistance
Figure 12. Turn−On Characteristics vs.
Collector Current
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5
FGHL50T65SQDT
TYPICAL CHARACTERISTICS (continued)
10000
1000
500
100
Eon
tr
t
d(off)
E
off
Common Emitter
10
1
Common Emitter
100
10
V
CC
= 400 V, V = 15 V
V
CC
= 400 V, V = 15 V
GE
GE
R
= 4.7 W
R
= 4.7 W
G
G
T = 25°C
T = 25°C
J
J
T = 175°C
J
T = 175°C
J
0
25
50
75
100 125 150
C
0
25
50
75
100 125 150
C
Collector Current, I [A]
Collector Current, I [A]
Figure 13. Turn−Off Characteristics vs.
Figure 14. Switching Loss vs. Collector
Current
Collector Current
300
250
Square Wave
TJ ≤ 175C, D = 0.5,
T = 25°C
J
10 ms
100
V
CE
= 400 V
= 15/0 V
= 4.7 W
200
150
100
50
V
GE
100 ms
R
G
T = 75°C
J
1 ms
10 ms
10
DC
T = 100°C
J
*Notes:
1. T = 25°C
1
J
2. T = 175°C
J
3. Single Pulse
0,1
0
1
10
100
1000
1 000
10 000
100 000
1 000 000
Switching Frequency, f [Hz]
Collector − Emitter Voltage, V [V]
CE
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics (FBSOA)
300
100
16
T = 25°C
T = 175°C
J
J
di/dt = 200 A/ms
di/dt = 100 A/ms
T = 175°C
J
T = 25°C
J
12
8
10
T = 75°C
J
di/dt = 200 A/ms
di/dt = 100 A/ms
4
T = 25°C
J
T = 75°C
J
T = 175°C
J
1
0
0
1
2
3
4
5
0
30
60
90
120
150
Forward Voltage, V [V]
Forward Voltage, I [A]
F
F
Figure 17. Forward Characteristics
Figure 18. Reverse Recover Current
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6
FGHL50T65SQDT
TYPICAL CHARACTERISTICS (continued)
1500
350
280
210
140
70
T
J
T
J
= 25°C
= 175°C
T = 25°C
T = 175°C
J
J
1200
900
600
300
0
di/dt = 100 A/ms di/dt = 200 A/ms
di/dt = 200 A/ms di/dt = 100 A/ms
0
0
30
60
90
120
150
0
30
60
90
120
150
Forward Voltage, I [A]
Forward Current, I [A]
F
F
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
0,6
0.5
0.2
0,1
0.1
0.05
PDM
0.02
0.01
t1
t2
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
j
c
Single Pulse
0,01
10−5
10−4
10−3
10−2
10−1
100
101
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
0,8
0.1
0.5
0.2
0.1
0.05
0.02
0.01
0,01
PDM
t1
t2
Single Pulse
Duty Factor, D = t1 / t2
Peak T = Pdm x Zthjc + T
j
c
0,001
10−5
10−4
10−3
10−2
10−1
100
101
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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