FGY40T120SMD [ONSEMI]
IGBT，1200V，40A，场截止沟槽;
| 型号： | FGY40T120SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，40A，场截止沟槽 CD 双极性晶体管 |
| 文件： | 总10页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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March 2016
FGY40T120SMD
1200 V, 40 A Field Stop Trench IGBT
Features
General Description
•
•
•
•
•
•
FS Trench Technology, Positive Temperature Coefficient
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
High Speed Switching
Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A
100% of the Parts tested for ILM(1)
High Input Impedance
Applications
RoHS Compliant
•
Solar Inverter, Welder, UPS & PFC applications.
C
G
Power TO247
(TO-247H03)
G
C
E
E
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Description
FGY40T120SMD
Unit
VCES
Collector to Emitter Voltage
1200
±25
V
V
V
A
A
A
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
VGES
±30
@ TC = 25oC
@ TC = 100oC
80
40
IC
Collector Current
@ TC = 25oC
ILM (1)
Clamped Inductive Load Current
Pulsed Collector Current
160
ICM (2)
160
80
A
A
A
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
IF
40
IFM
PD
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
240
882
A
@ TC = 25oC
@ TC = 100oC
W
W
oC
oC
441
TJ
-55 to +175
-55 to +175
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.17
0.55
40
Unit
oC/W
oC/W
oC/W
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
--
--
--
Notes:
1. Vcc = 600 V,V = 15 V, I = 160 A, R = 10 Ω, Inductive Load
GE
C
G
2. Limited by Tjmax
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGY40T120SMD
FGY40T120SMD
TP-247
-
-
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA
1200
-
-
-
-
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
250
±400
uA
nA
IGES
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 40 mA, VCE = VGE
4.9
-
6.2
1.8
7.5
2.4
V
V
I
C = 40 A, VGE = 15 V
TC = 25oC
VCE(sat)
Collector to Emitter Saturation Voltage
I
T
C = 40 A, VGE = 15 V,
C = 175oC
-
2.0
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
4300
180
-
-
-
pF
pF
pF
VCE = 30 V, VGE = 0 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
100
Switching Characcteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
47
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
Turn-Off Delay Time
Fall Time
475
10
ns
V
CC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2.7
1.1
3.8
40
mJ
mJ
mJ
ns
55
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
520
50
ns
V
CC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
ns
Inductive Load, TC = 175oC
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
3.4
2.5
5.9
370
23
mJ
mJ
mJ
nC
nC
nC
V
CE = 600 V, IC = 40 A,
Qge
Qgc
VGE = 15 V
210
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
2
www.fairchildsemi.com
Electrical Characteristics of the DIODE
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IF = 40 A, TC = 25oC
-
3.8
4.8
V
VFM
Diode Forward Voltage
IF = 40 A, TC = 175oC
-
-
-
-
-
-
2.7
65
-
-
-
-
-
-
V
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
VR = 600 V, IF = 40 A,
ns
nC
uJ
ns
nC
diF/dt = 200 A/us, TC = 25oC
Qrr
Erec
trr
234
97
VR = 600 V, IF = 40 A,
diF/dt = 200 A/us, TC = 175oC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
200
1800
Qrr
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
300
TC = 175oC
TC = 25oC
20V
17V
20V
15V
17V
250
200
150
100
50
250
200
150
100
50
15V
12V
12V
VGE=10V
VGE=10V
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
3
2
1
160
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC
TC = 175oC ---
=
25oC
120
80
40
0
80A
40A
IC=20A
0
1
2
3
4
5
25
50
75
100
125
150
GE
175
Case Temperature TC [oC]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
20
20
Common Emitter
Common Emitter
TC = 25oC
TC = 175oC
16
16
80A
80A
12
12
40A
40A
8
8
IC=20A
IC=20A
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Load Current vs. Frequency
300
6000
VCC = 600 V
Common Emitter
VGE = 0V , f = 1MHz
TC = 25oC
Load Current: peak of square wave
250
5000
4000
3000
2000
1000
Ciss
200
TC = 100oC
150
100
Coss
Crss
Duty Cycle: 50%
50
TC = 100oC
Power Dissipation = 441 W
0
1
10
1k
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
1000
tr
td(off)
100
100
td(on)
tf
Common Emitter
10
VCC = 600V, VGE = 15V
10
IC = 40A
Common Emitter
VCC = 600V, VGE = 15V, IC = 40A
TC = 25oC
TC = 175oC
TC = 25oC
,
TC = 175oC
1
1
0
10
20
30
40
50 60
70
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Swithcing Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
tr
10
Eon
100
Eoff
td(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
IC = 40A
TC = 25oC
TC = 175oC
10
0.1
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Collector Current, IC [A]
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Swithcing Loss vs.
Collector Current
30
1000
td(off)
10
Eon
100
Eoff
1
tf
Common Emitter
VGE = 15V, RG = 10Ω
10
TC = 25oC
TC = 175oC
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
,
TC = 175oC
0.1
1
10
20
30
40
50
60
70
80
20
40
60
80
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Gate Charge Characteristics
Figure 16. SOA Characteristics
500
15
IcMAX (Pulsed)
100
10μs
12
200V
400V
100μs
1ms
10ms
DC
IcMAX (Continuous)
VCC = 600V
10
1
9
6
3
0
Single Nonrepetitive
Pulse TC = 25oC
0.1
0.01
Curves must be derated
linearly with increase
in temperature
Common Emitter
TC = 25oC
1
10
100
1000
0
50 100 150 200 250 300 350 400
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
21
TC = 25oC
TC = 175oC
18
100
diF/dt = 200A/μs
15
12
diF/dt = 100A/μs
9
10
diF/dt = 200A/μs
6
diF/dt = 100A/μs
TC = 25oC
3
TC = 175oC ---
0
1
0
1
2
3
4
5
0
20
40
60
80
Forward Voltage, VF [V]
Forward Current, IF [A]
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
360
3000
TC = 25oC
TC = 25oC
TC = 175oC ---
TC = 175oC ---
2500
300
240
180
2000
1500
di/dt = 100A/μs
di/dt = 200A/μs
di/dt = 100A/μs
120
60
0
1000
di/dt = 200A/μs
500
0
0
20
40
60
80
0
20
40
60
80
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21. Transient Thermal Impedance of IGBT
0.3
0.1
0.5
0.3
0.1
0.05
0.02
0.01
P
DM
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
0.8
0.1
0.5
0.3
0.1
0.05
PDM
0.02
t1
0.01
t2
Duty Factor, D = t1/t2
0.01
single pulse
Peak Tj = Pdm x Zthjc + TC
0.005
1E-5
1E-4
1E-3
0.01
0.1 1
Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FGY40T120SMD Rev. 1.2
7
www.fairchildsemi.com
15.87
15.37
4.82
4.58
B
A
13.80
13.40
1.35
0.51
12.25
11.75
5.58
5.34
2.20
1.80
4.52
4.12
17.03
16.63
20.82
20.32
3.93
3.69
2.39
2.10
2.66
2.29
1.75
20.10
19.90
3.20
2.87
1.30
1.10
0.71
0.51
2X 5.45
M
M
B A
0.254
FRONT VIEW
SIDE VIEW
BOTTOM VIEW
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY STANDARDS.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
E. DRAWING FILE NAME: TO247H03REV1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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