FSA4476UCX [ONSEMI]

带保护功能的模拟音频开关,USB Type-C;
FSA4476UCX
型号: FSA4476UCX
厂家: ONSEMI    ONSEMI
描述:

带保护功能的模拟音频开关,USB Type-C

开关
文件: 总14页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
USB Type-C Analog Audio  
Switch with Protection  
Function  
WLCSP25, 2.03x2.03x0.586  
CASE 567UP  
FSA4476  
MARKING DIAGRAM  
Description  
FSA4476 is a high performance USB Type−C port multimedia  
switch which supports analog audio headsets. FSA4476 allows the  
sharing of a common USB Type−C port to pass USB2.0 signal, analog  
audio, sideband use wires and analog microphone signal. FSA4476  
also supports high voltage on CC port, SBU port and USB port on  
USB Type−C receptacle side. In addition, FSA4476 supports USB  
Type−C dead battery application and dual power supply with VBAT  
rail and VBUS rail.  
GR&K  
&2&Z  
GR = Device Code  
&K = 2−Digits Lo Run Traceability Code  
&2 = 2−Digit Date Code  
&Z = Assembly Plant Code  
Features  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 12 of  
this data sheet.  
Power Management  
Primary Power Supply: VBAT, 2.7 V to 5.5 V  
Second Power Supply VBUS, 4.0 V to 20 V  
USB High Speed (480 Mbps) Switch:  
−3 dB Bandwidth: 1 GHz  
3 R Typical  
ON  
Audio Switch  
Negative Rail Capability: −3 V to +3 V  
THD+N = −110 dB; 1 V , f = 20 Hz~20 kHz, 32 Load  
RMS  
0.6 R Typical  
ON  
High Voltage Protection  
20 V DC Protection on CC Port and SBU Port  
16 V DC Protection on DP/R and DN/L Port  
Over Voltage Protection:  
5.8 V (Typ) on CC Port  
4.5 V (Typ) on SBU Port  
4.5 V (Typ) on DP/R and DN/L Port  
OMTP and CTIA Pinout Support  
Support Audio Sense Path  
Support Dead Battery  
25−ball WLCSP Package (2.03 mm x 2.03 mm)  
This is a Pb−Free Device  
Applications  
Mobile Phone, Tablet, Notebook PC, Media Player  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2022 − Rev. 4  
FSA4476/D  
FSA4476  
VBAT  
VBUS  
CC1  
CC1_H  
CC1  
CC2  
CC  
Logic  
CC2_H  
CC2  
USB Type−C  
Receptacle  
GND  
GND  
FSA4476  
SSRXp1  
SSRXn1  
VBUS  
SBU2  
DN  
SSTXp1  
SSTXn1  
VBUS  
CC1  
L
DN/L  
DP/R  
HPL  
HPR  
DN  
R
Audio Codec  
DP  
DP  
DP  
DN  
SENSE  
CC2  
SBU1  
VBUS  
SSRXn2  
MIC  
MIC  
VBUS  
SSTXn2  
SSTXp2  
GND  
SBU2  
SBU1  
SSRXp2  
GND  
GND_M  
DN  
DP  
EN1  
EN2  
GPIO1  
GPIO2  
INT1  
INT1  
SBU2_H  
AP  
SBU2  
SBU1  
CTL  
SBU1_H  
EN  
INT  
INT  
GND  
Figure 1. Application Block Diagram  
PIN CONFIGURATION  
A
VBUS  
VBAT  
SBU1_H  
INT1  
INT  
NC  
CC2_H  
CC1_H  
CC1  
B
C
SBU2_H  
GND_M  
GND  
CC2  
L
ENN  
EN1  
DN/L  
DP/R  
D
E
MIC  
R
SBU2  
SBU1  
EN2  
DP  
DN  
1
2
3
4
5
Figure 2. Pin Assignment (Top Through View)  
www.onsemi.com  
2
FSA4476  
PIN DESCRIPTIONS  
Name  
VBUS  
VBAT  
GND  
DP/R  
DN/L  
DP  
Ball  
A1  
A2  
D1  
D5  
C5  
E4  
E5  
C4  
D4  
E2  
E1  
D2  
C1  
B2  
B1  
B5  
B4  
A5  
A4  
A3  
C2  
Description  
Power Supply  
Power Supply  
Ground  
USB Positive Data/Right Audio Common Line  
USB Negative Data/Left Audio Common Line  
Positive DataLine for USB signals  
Negative DataLine for USB signals  
Left Line for Audio Signals  
DN  
L
R
Right Line for Audio Signals  
SBU1  
SBU2  
MIC  
Sideband Use Wire 1 Common Line  
Sideband Use Wire 2 Common Line  
Microphone, connects to microphone pre−amplifier  
Sense Pin to Detect GND offset  
Host Side Sideband Use Wire 1  
Host Side Sideband Use Wire 2  
Configuration Channel 1  
GND_M  
SBU1_H  
SBU2_H  
CC1  
CC2  
Configuration Channel 2  
CC1_H  
CC2_H  
INT  
Host Side Configuration Channel 1  
Host Side Configuration Channel 2  
OVP Interrupt Output, active low (open drain)  
INT1  
Interrupt Output Signal; During EN1=1, INT1 is low active (open drain output) when CC1_H < 1.2 V and  
CC2_H < 1.2 V.  
ENN  
EN1  
EN2  
NC  
C3  
D3  
E3  
B3  
Chip Enable, active low, internal pull−down by 1Mohm.  
Logic Configuration Input 1  
Logic Configuration Input 2  
No Connect  
TRUTH TABLE  
Headset  
Detection  
USB  
Switch  
Audio  
Switch  
MIC SW /  
GND_M SW  
SBU Bypass  
Switch  
Power  
OFF  
ON  
ENN  
X
EN1,EN2  
XX  
CC Switch  
Dead battery  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
H
XX  
ON  
L
00  
ON  
ON:  
ON:  
DP/R to DP  
DN/L to DN  
SBU1 to SBU1_H  
SBU2 to SBU2_H  
ON  
ON  
L
L
01  
10  
ON  
ON  
OFF  
ON  
ON:  
DP/R to DP  
DN/L to DN  
OFF  
OFF  
ON:  
SBU1 to SBU2_H  
SBU2 to SBU1_H  
OFF  
ON:  
DP/R to R  
DN/L to L  
ON:  
OFF  
SBU1 to MIC  
SBU2 to GND_M  
SBU2 to GND  
ON  
L
11  
ON  
ON  
OFF  
ON:  
DP/R to R  
DN/L to L  
ON:  
OFF  
SBU2 to MIC  
SBU1 to GND_M  
SBU1 to GND  
www.onsemi.com  
3
FSA4476  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Min  
−0.5  
−0.5  
−0.5  
−0.5  
−3.5  
−0.5  
−3.5  
−0.5  
−0.5  
−0.5  
−0.5  
Max  
6.5  
28  
Unit  
V
V
Supply Voltage from VBAT  
Supply Voltage from VBUS  
BAT  
VBUS  
V
V
V
V
V
V
, to GND  
20  
V
VICC  
CCx  
V
, to GND  
to GND, V  
6.5  
16  
V
VCC_H  
SW_USB/Audio  
CCx_H  
V
to GND  
DN_L  
V
DP_R  
V
to GND, V to GND  
6.5  
+3.5  
20  
V
SW_USB  
DP  
DN  
V
V to GND, V to GND  
V
SW_Audio  
L
R
V
V
V
to GND, V to GND  
SBU2  
V
VSBU  
SBU1  
V
to GND, V  
to GND  
6.5  
6.5  
6.5  
1.25  
250  
100  
50  
V
VSBU_H  
SBU1_H  
SBU2_H  
V
MIC,GND_M, INT,INT1to GND  
Control Input Voltage  
V
I/O  
V
ENN, ENx  
V
CNTRL  
CCSW  
I
CC Switch Current  
A
I
Switch I/O Current, Audio Path  
Switch I/O Current, USB Path  
Switch I/O Current, MIC to SBU1 or SBU2  
Switch I/O Current, GND_M to SBU1 or SBU2  
Switch I/O Current, GND to SBU1 or SBU2  
DC Input Diode Current  
−250  
mA  
mA  
mA  
mA  
mA  
mA  
kV  
SW_Audio  
I
SW_USB  
I
SW_MIC  
I
100  
500  
SW_GND_M  
I
SW_GND  
I
IK  
−50  
4
ESD  
Human Body Model, ANSI/ESDA/JEDEC  
JS−001−2012  
Connector Side and Power Pins: VBUS,  
V
BAT  
, CC1, CC2, SBU1, SBU2, DP/R, DN/L  
Host Side Pins: The Rest Pins  
2
Charged Device Model, JEDEC: JESD22−C101  
Absolute Maximum Operating Temperature  
Storage Temperature  
1
T
−40  
−65  
+85  
+150  
°C  
°C  
A
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
www.onsemi.com  
4
FSA4476  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
POWER  
Parameter  
Min  
Max  
Max  
Unit  
VBAT  
VBUS  
Supply Voltage  
Supply Voltage  
2.7  
4.0  
5.5  
20  
V
V
USB SWITCH  
VSW_USB  
V
DP  
to GND, V to GND, V  
GND, V to GND  
DN/L  
0
4.0  
V
DN  
DP/Rto  
AUDIO SWITCH  
VSW_Audio  
VSW_MIC  
SBU SWITCH  
VVSBU  
V
GND, V  
to GND, V to GND, V to GND  
−3  
0
+3  
V
V
DP/Rto  
DN/L  
L
R
MIC to GND  
3.6  
V
SBU1  
to GND, V  
to GND, V  
to GND, V to GND  
SBU2_H  
0
4.0  
V
SBU2  
SBU1_H  
CC SWITCH  
VVICC  
V
V
, to GND  
0
0
5.5  
5.5  
V
V
A
CCx  
VVCC_H  
, to GND  
CCx_H  
ICCSW  
CC Switch Current  
1.25  
CONTROL VOLTAGE (ENN, ENX)  
VIH  
VIL  
Input Voltage High  
Input Voltage Low  
1.3  
V
V
0.5  
OPERATING TEMPERATURE  
TA Ambient Operating Temperature  
−40  
25  
+85  
°C  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
5
FSA4476  
DC CHARACTERISTICS (VBAT = 2.7 V to 5.5 V or VBUS = 4.0 V to 20 V, VBAT (Typ.) = 4.3 V or VBUS (Typ.) = 5 V, T = −40°C to  
A
85°C, and T (Typ.) = 25°C, unless otherwise specified.) (Note 1)  
A
T =−405C to +855C  
A
Min  
Typ  
25  
5
Max  
Symbol  
Parameter  
VBAT Supply Current  
Quiescent Current  
Condition  
Power  
Unit  
A  
I
VBAT = 4.3 V  
VBAT = 4.3 V  
CC  
I
A  
CCZ  
USB/AUDIO COMMON PINS  
I
Off Leakage Current of Port  
DP/R and DN/L  
DN/L, DP/ R = −3 V to 4.0 V  
DN/L, DP/R = 0 V to 4.0 V  
Rising edge  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−3.0  
−3.0  
3.0  
3.0  
A  
A  
OZ  
I
Power−Off Leakage Current  
of Port DP/R and DN/L  
Power off  
OFF  
V
Input OVP Lockout  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
4.2  
4.5  
0.3  
4.8  
V
V
OV_TRIP  
V
Input OVP Hysteresis  
OV_HYS  
AUDIO SWITCH  
I
On Leakage Current of  
Audio Switch  
DN/L, DP/R = −3 V to 3.0 V,  
DP, DN, R, L = Float  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−2.0  
−1.0  
0.1  
2.0  
1.0  
A  
A  
ON  
I
Power−Off Leakage Current  
on L and R  
L, R = 0 V to 3 V  
Power off  
OFF  
R
Switch On Resistance  
I
= 100 mA, V = −3 V  
SW  
VBAT: 2.7 V to 5.5 V or  
VBUS: 4 V to 20 V  
0.6  
10  
ON  
SW  
to 3 V  
R
Pull Down Resistor on R/L  
Pin when Audio Switch is Off  
L = R = 3 V  
6
14  
kꢀ  
SHUNT  
USB SWITCH  
I
On Leakage Current of USB  
Switch  
DN/L, DP/R = 0 V to 4.0 V,  
DP, DN, R, L = Float  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−3.0  
−3.0  
−3.0  
1.0  
3.0  
3.0  
3.0  
A  
A  
A  
ON  
I
Off Leakage Current of Port  
DP and DN  
DN, DP = 0 V to 4.0 V  
OZ  
I
Power−Off Leakage Current  
on DP and DN  
DN, DP = 0 V to 4.0 V  
Power off  
OFF  
R
USB Switch On Resistance  
I
= 8 mA, V = 0.4 V  
SW  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
3
ON_USB  
SW  
CC SWITCH  
I
On Leakage Current of CC  
Switch  
Vsw from 0 V to 3.6 V  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−1.5  
2.0  
A
ON  
R
CC Path On Resistance  
Input OVP Lockout  
I
= 200 mA, V = 5 V  
SW  
5.6  
300  
5.8  
0.3  
5.1  
6.1  
mꢀ  
V
ON  
OUT  
V
Rising edge  
OV_TRIP  
V
Input OVP Hysteresis  
V
OV_HYS  
R
Dead Battery Pull Down  
Resistance  
350 A on CCx pin  
EN1 = H  
VBAT < 2.4 V and  
VBUS < 3.5 V  
4.08  
6.12  
kꢀ  
d
V
CCx_H High Threshold  
under Headset Detection  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
1.5  
1.2  
V
V
THR_H  
V
THR_L  
CCx_Hlow Threshold under  
Headset Detection  
EN1 = H  
SBU COMMON PINS  
I
Off Leakage Current of Port  
SBUx  
SBUx = 0 V to 4 V  
SBUx= 0 V to 4 V  
Rising edge  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−3.0  
−3.0  
3.0  
3.0  
A  
A  
OZ  
I
Power−Off Leakage Current  
of Port SBUx  
Power off  
OFF  
V
Input OVP Lockout  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
4.2  
4.5  
0.3  
4.8  
V
V
OV_TRIP  
V
Input OVP Hysteresis  
OV_HYS  
www.onsemi.com  
6
FSA4476  
DC CHARACTERISTICS (VBAT = 2.7 V to 5.5 V or VBUS = 4.0 V to 20 V, VBAT (Typ.) = 4.3 V or VBUS (Typ.) = 5 V, T = −40°C to  
A
85°C, and T (Typ.) = 25°C, unless otherwise specified.) (Note 1) (continued)  
A
T =−405C to +855C  
A
Min  
Typ  
Max  
Symbol  
Parameter  
Condition  
Power  
Unit  
MIC SWITCH  
I
On Leakage Current of MIC  
Switch  
SBUx = 0 V to 3.6 V, MIC is  
floating  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−3.0  
3.0  
A
ON  
I
Off Leakage Current on MIC  
MIC = 0 V to 3.6 V  
MIC = 0 V to 3.6 V  
−1.0  
−1.0  
1.0  
1.0  
A  
A  
OZ  
I
Power Off Leakage Current  
on MIC  
Power off  
OFF  
R
ON  
MIC Switch On Resistance  
MIC = 0 V to 3.6 V,  
Isw = 30 mA  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
2
GND_M SWITCH  
I
Off Leakage on GND_M  
GND_M = 0 V to 3.6 V  
GND_M = 0 V to 3.6 V  
Isw = 30 mA  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−2.0  
−1.0  
2.0  
1.0  
A  
A  
OZ  
I
Power Off Leakage Current  
on GND_M  
Power off  
OFF  
R
GND_M Switch On  
Resistance  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
0.5  
ON  
SBU BYPASS SWITCH  
I
On Leakage Current of SBU  
Bypass Switch  
SBUx= 0 V to 4 V, SBUx_H  
is floating  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
−1.0  
−1.0  
3
2.0  
1.0  
A  
A  
ON  
I
Off Leakage Current on  
SBUx_H  
SBUx_H = 0 V to 4 V  
OZ  
R
SBU Bypass Switch On  
Resistance  
SBUx = 0 V to 3.6 V,  
Isw = 50 mA  
ON  
INTERNAL GND SWITCH  
R
ON  
Internal GND Switch On Re-  
sistance  
Isw = 200 mA  
VBAT: 2.7 V to 5.5 V  
or VBUS: 4 V to 20 V  
75  
110  
(Note 2)  
mꢀ  
1. Limits over the recommended temperature operating range (T = −40°C to +85°C) are correlated by statistical quality.  
A
2. Guaranteed by characterization, not production tested.  
www.onsemi.com  
7
 
FSA4476  
AC CHARACTERISTICS (VBAT = 2.7 V to 5.5 V or VBUS = 4.0 V to 20 V, VBAT (Typ.) = 4.3 V or VBUS (Typ.) = 5 V, T = −40°C to  
A
85°C. T (Typ.) = 25°C, unless otherwise specified.)  
A
T =−405C to +855C  
A
Min  
Typ  
Max  
Symbol  
Parameter  
Condition  
Power  
Unit  
AUDIO SWITCH  
t
Turn On Time (Note 3)  
DP/R = DN/L = 1.5 V,  
R = 50 ꢀ  
L
VBAT: 4.3 V  
or VBUS: 5 V  
55  
2
s  
s  
dB  
ON  
t
Turn OFF Time (Note 3)  
Cross Talk (Adjacent) (Note 3)  
DP/R = DN/L = 1.5 V,  
R = 50 ꢀ  
L
OFF  
X
TALK  
f = 1 kHz, R = 50 ,  
−110  
L
V
SW  
= 1 V  
RMS  
BW  
−3 dB Bandwidth (Note 3)  
Off Isolation (Note 3)  
R = 50 ꢀ  
950  
MHz  
dB  
L
O
IRR  
f= 1 kHz, R = 50 ,  
−100  
L
C = 0 pF, V  
= 1 V  
L
SW  
RMS  
THD+N  
Total Harmonic Distortion + Noise  
Performance with A− Weighting  
Filter (Note 3)  
−110  
−110  
−108  
dB  
dB  
dB  
R = 600 ,  
L
f = 20 Hz~20 kHz,  
= 2 V  
V
SW  
RMS  
R = 32 ,  
L
f = 20 Hz~20 kHz,  
= 1 V  
V
SW  
RMS  
R = 16, ,  
L
f = 20 Hz~20 kHz,  
= 0.5 V  
V
SW  
RMS  
USB SWITCH  
t
Turn−on Time (Note 3)  
Turn−off Time (Note 3)  
−3 dB Bandwidth (Note 3)  
DP/R = DN/L = 1.5 V,  
R = 50 ꢀ  
L
VBAT: 4.3 V  
or VBUS: 5 V  
40  
1
s  
s  
ON  
t
DP/R = DN/L = 1.5 V,  
R = 50 ꢀ  
L
OFF  
BW  
R = 50 ꢀ  
L
1
GHz  
dB  
O
Off Isolation (Note 3) between DP, f = 1 kHz, R = 50 ,  
−100  
IRR  
L
DN and Common Node Pins  
C = 0 pF, V  
= 1 V  
SW RMS  
L
t
DP/R and DN/L Pins OVP  
Response Time (Note 3)  
R = 50 , Vsw = 3.5 V to  
5.5 V  
0.5  
1.5  
s
OVP  
L
CC SWITCH  
t
Turn−On Time (Note 3)  
Turn−Off Time (Note 3)  
PD Traffic Bandwidth (Note 3)  
V
V
= 5 V, R = 5 kꢀ  
VBAT: 4.3 V  
or VBUS: 5 V  
0.5  
3
1
ms  
s  
ON  
ICCx  
L
t
= 5 V, R = 5 kꢀ  
L
OFF  
ICCx  
BW  
R = 50 ꢀ  
25  
0.6  
MHz  
s  
L
CCx Pins OVP Response Time  
(Note 3)  
R = 25 , C = 200 pF,  
L
L
V
SW  
: 4 V to 7 V  
t
OVP  
SBUX BYPASS SWITCH  
t
SBUx Pins OVP Response Time  
(Note 3)  
R = 50 , Vsw = 3.5 V to  
5.5 V  
VBAT: 4.3 V  
or VBUS: 5 V  
0.6  
1
s  
s  
OVP  
L
t
Turn−On Time (Note 3)  
Turn−OFF Time (Note 3)  
Isw on SBUx = 1 mA and  
VBAT: 4.3 V  
or VBUS: 5 V  
12  
1
ON  
clamp to 2 V, R on MIC and  
L
SBUx_H = 1 k,  
GND_M = 100 mV, series  
50 on GND_M pin  
t
OFF  
BW  
Bandwidth (Note 3)  
R = 50 ꢀ  
L
25  
MHz  
www.onsemi.com  
8
FSA4476  
AC CHARACTERISTICS (VBAT = 2.7 V to 5.5 V or VBUS = 4.0 V to 20 V, VBAT (Typ.) = 4.3 V or VBUS (Typ.) = 5 V, T = −40°C to  
A
85°C. T (Typ.) = 25°C, unless otherwise specified.) (continued)  
A
T =−405C to +855C  
A
Min  
Typ  
Max  
Symbol  
Parameter  
Condition  
Power  
Unit  
MIC/GND_M/INTERNAL GND SWITCH  
t
Turn−On Time (Note 3)  
Isw on SBUx = 1 mA and  
VBAT: 4.3 V  
or VBUS: 5 V  
10  
60  
950  
1
s  
ON_MIC  
clamp to 2 V, R on MIC and  
L
t
ON_GND_M  
SBUx_H = 1 k,  
GND_M = 100 mV, series  
50 on GND_M pin  
t
ON_GND  
Turn−OFF Time (Note 3)  
tOFF_MIC  
tOFF_GND_M  
1
tOFF_GND  
1
BW  
MIC Switch Bandwidth (Note 3)  
R = 50 ꢀ  
L
25  
MHz  
INTERRUPT DELAY  
T
INT Response Delay (Note 3)  
INT pull up by 10k resistor  
to valid power  
VBAT: 4.3 V  
or VBUS: 5 V  
5
5
s  
DELAY_INT  
T
INT1 Response Delay (Note 3)  
INT1 pull up by 10k resistor  
to valid power  
DELAY_INT1  
3. Guaranteed by characterization, not production tested  
CAPACITANCE (Unless otherwise stated VBAT = 2.7 V to 5.5 V or VBUS = 4.0 V to 20 V, VBAT (Typ.) = 4.3 V or VBUS (Typ.) = 5 V,  
T = −40°C to 85°C, and T (Typ.) = 25°C.)  
A
A
T =−405C to +855C  
A
Min  
Typ  
Max  
Symbol  
Parameter  
Condition  
Power  
Unit  
C
On Capacitance  
(Common Port) (Note 4)  
f = 1 MHz, 100 mV  
100 mV DC bias  
,
,
,
VBAT: 4.3 V  
or VBUS: 5 V  
7
pF  
ON_USB/Audio  
PK−PK  
PK−PK  
PK−PK  
C
Off Capacitance  
(Common Port) (Note 4)  
f = 1 MHz, 100 mV  
100 mV DC bias  
7
2
pF  
pF  
pF  
pF  
pF  
pF  
OFF_USB/Audio  
C
Off Capacitance  
(Non−Common Ports) (Note 4) 100 mV DC bias Figure 12  
f = 1 MHz, 100 mV  
OFF_USB  
C
Off Capacitance  
(Non−Common Ports) (Note 4) 100 mV DC bias  
f = 1 MHz, 100 mV  
,
,
,
12  
140  
150  
6
OFF_SBUx_H  
PK−PK  
PK−PK  
PK−PK  
C
Off Capacitance  
(Common Ports) (Note 4)  
f = 1 MHz, 100 mV  
100 mV DC bias  
OFF_SBUx  
C
On Capacitance  
(Common Port) (Note 4)  
f = 1 MHz, 100 mV  
100 mV DC bias  
ON_SBUx  
Control Input Pin  
Capacitance (ENx) (Note 4)  
f = 1 MHz, 100 mV  
100 mV DC bias  
,
ENx,  
ENN  
PP  
C
CNTRL  
4. Guaranteed by characterization, not production tested  
www.onsemi.com  
9
 
FSA4476  
APPLICATION INFORMATION  
Dead Battery  
Headset detection  
FSA44776 supports dead battery application. When  
power is not applied to FSA4476 and it is attached to a  
Source device, then the Source would pull up the CC line  
connected through the cable. FSA4476 in response would  
turn on the pull−down that will bring the CC voltage to a  
range that the Source can detect an attach event and turn on  
VBUS.  
FSA4476 integrates headset unplug detection function by  
detecting the CCx_H voltage. The headset detection is only  
active during audio switch on status(EN1 = 1). When  
headset is attached (both CC1_H and CC2_H are Low), the  
flag signal is sent low to host controller by INT1 (INT1 =  
low). Once either of CCx_H = High (CCx_H > 1.5 V), INT1  
will be released to high by external pull up resistor.  
POWER SUPPLY CONFIGURATION  
VBUS  
Invalid  
Valid  
VBAT  
Invalid  
Invalid  
Valid  
Power Supply  
Max (VBAT VBUS)  
,
VBUS  
VBAT  
VBAT  
Invalid  
Valid  
Valid  
www.onsemi.com  
10  
FSA4476  
TEST DIAGRAMS  
V
ON  
I
NO  
Float  
V
SW  
V
SW  
I
Select  
SW  
GND  
GND  
Select  
GND  
= 0 or V  
V
SEL  
= 0 or V  
DD  
V
SEL  
DD  
**Each switch port is tested separately  
R
= V / I  
ON  
ON SW  
Figure 3. On Resistance  
Figure 4. Off Leakage (Ioz)  
I
NO  
Float  
I
ON  
Float  
A
V
SW  
V
SW  
Select  
= VBUS = 0 V  
Select  
= 0 or V  
GND  
GND  
V
BAT  
V
SEL  
DD  
**Each switch port is tested separately  
Figure 5. On Leakage  
Figure 6. Power Off Leakage (Ioff)  
90%  
ENx  
VI/O IN  
10%  
V
SW  
V
OUT  
90%  
H = 3.3 V  
L = 0 V  
R
C
R
L
GND  
S
L
10%  
GND  
T
OFF  
90%  
T
ON  
VI/O OUT  
H = 3.3 V  
L = 0 V  
V
SEL  
R and C are function of application  
L
L
10%  
environment (see AC/DC Tables)  
C includes test fixture and stray capacitance  
GND  
T
OFF  
T
ON  
L
Figure 7. Test Circuit Load  
Figure 8. Turn On/Off Waveforms  
Network Analyzer  
Network Analyzer  
R
R
S
S
V
S
V
S
V
IN  
V
GND  
CNTRL  
R
T
GND  
V
GND  
V
SEL  
V
OUT  
GND  
GND  
OUT  
GND  
GND  
R
R
T
T
R
and R are function of application  
T
environment (see AC/DC Tables)  
R and C are function of application  
environment (see AC/DC Tables)  
S
L
L
C includes test fixture and stray capacitance  
L
OFF − Isolation = 20 Log (V /V  
OUT IN  
)
Figure 9. Bandwidth  
Figure 10. Channel Off Isolation  
www.onsemi.com  
11  
FSA4476  
Network Analyzer  
R
S
V
IN  
V
SEL  
GND  
V
S
V
OUT  
GND  
GND  
R
T
R
T
Capacitance  
Meter  
GND  
CROSSTALK = 20 Log (V  
V
SEL  
= 0 or V  
DD  
/V  
OUT IN  
)
R
and R are function of application  
T
environment (see AC/DC Tables)  
S
F = 1 MHz  
Figure 11. Adjacent Channel Crosstalk  
Figure 12. Channel Off Capacitance  
Network Analyzer  
R
S
V
IN  
V
S
GND  
Meter  
V
SEL  
GND  
V
OUT  
V
SEL  
= 0 or V  
DD  
GND  
R
T
F = 1 MHz  
R and C are function of application  
environment (see AC/DC Tables)  
C includes test fixture and stray capacitance  
L
L
L
Figure 13. Channel On Capacitance  
Figure 14. Total Harmonic Distortion (THD+N)  
ORDERING INFORMATION  
Part Number  
FSA4476UCX  
Top Mark  
Package Description  
Shipping  
GR  
25 Ball WLCSP25, 2.03x2.03x0.586  
(Pb−Free)  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
12  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WLCSP25, 2.03x2.03x0.586  
CASE 567UP  
ISSUE A  
DATE 21 MAY 2019  
SCALE 4:1  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON64860G  
WLCSP25, 2.03x2.03x0.586  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

FSA4480

USB Type-C Analog Audio Switch
ONSEMI

FSA4480UCX

USB Type-C Analog Audio Switch
ONSEMI

FSA4485UCX

USB-C™ Analog Audio Switch with Overvoltage Protection
ONSEMI

FSA4486UCX

USB Type-C Analog Audio Switch with Protection Function
ONSEMI

FSA4UN3242-60JS-S

Fast Page DRAM Module, 4MX32, 60ns, CMOS, PSMA72
FUJITSU

FSA4UN3244-60JS-S

Fast Page DRAM Module, 4MX32, 60ns, CMOS, PSMA72,
FUJITSU

FSA4UN3244-70JS-S

Fast Page DRAM Module, 4MX32, 70ns, CMOS, PSMA72,
FUJITSU

FSA4UN3642-60JG-S

Fast Page DRAM Module, 4MX36, 60ns, CMOS, PSMA72,
FUJITSU

FSA4UN3642-60JS-S

Fast Page DRAM Module, 4MX36, 60ns, CMOS, PSMA72,
FUJITSU

FSA4UN3642-70JS-S

Fast Page DRAM Module, 4MX36, 70ns, CMOS, PSMA72,
FUJITSU

FSA4UN3644-60JG-S

Fast Page DRAM Module, 4MX36, 60ns, CMOS, PSMA72,
FUJITSU

FSA4UN3644-60JS-S

Fast Page DRAM Module, 4MX36, 60ns, CMOS, PSMA72,
FUJITSU