JANTX2N3637L [ONSEMI]
MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-5 3-Lead, 100-BLKBX, Military Qualified;型号: | JANTX2N3637L |
厂家: | ONSEMI |
描述: | MIL-PRF-19500/357: 175 V, 1 A PNP Small Signal Transistor, TO-5 3-Lead, 100-BLKBX, Military Qualified 开关 晶体管 |
文件: | 总4页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
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COLLECTOR
3
Features
• MIL−PRF−19500/357 Qualified
• Available as JAN, JANTX, JANTXV and JANHC
2
BASE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
1
EMITTER
Characteristic
Symbol 2N3634/L
2N3635/L
2N3636/L
2N3637/L
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
V
−140
−140
−175
−175
Vdc
Vdc
Vdc
Adc
CEO
CBO
V
−5.0
EBO
Collector Current
− Continuous
I
C
1.0
1.0
5.0
Total Device Dissipation
P
P
W
W
°C
T
T
@ T = 25°C
A
Total Device Dissipation
@ T = 25°C
C
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
Operating and Storage Junc-
tion Temperature Range
T , T
J
−65 to +200
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
175
35
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
°C/W
°C/W
R
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Level
Device
2N3634
Package
Shipping
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
TO−39
Bulk
2N3635
2N3636
2N3637
JAN
JANTX
JANTXV
JANHC
TO−5
Bulk
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
2N3637/D
January, 2013 − Rev. 0
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
V
(BR)CEO
(I = −10 mA)
2N3634, 2N3635
2N3636, 2N3637
−140
−175
−
−
C
Emitter−Base Cutoff Current
I
EBO
(V = −3.0 V)
−
−
−50
−10
nA
mA
EB
(V = −5.0 V)
EB
Collector−Emitter Cutoff Current
I
I
CEO
(V = −100 V)
−
−10
mA
CE
Collector−Base Cutoff Current
CBO
(V = −100 V)
−
−
−
−100
−10
−10
nA
mA
mA
CB
(V = −140 V)
2N3634, 2N3635
2N3636, 2N3637
CB
(V = −175 V)
CB
ON CHARACTERISTICS (Note 1)
DC Current Gain
2N3634, 2N3636
h
−
FE
FE
(I = −0.1 mA, V = −10 V)
25
45
50
50
30
−
−
C
CE
(I = −1.0 mA, V = −10 V)
C
CE
CE
CE
CE
(I = −10 mA, V = −10 V)
−
C
(I = −50 mA, V = −10 V)
150
−
C
(I = −150 mA, V = −10 V)
C
DC Current Gain
2N3635, 2N3637
h
−
(I = −0.1 mA, V = −10 V)
55
90
100
100
60
−
−
−
300
−
C
CE
CE
CE
CE
(I = −1.0 mA, V = −10 V)
C
(I = −10 mA, V = −10 V)
C
(I = −50 mA, V = −10 V)
C
(I = −150 mA, V = −10 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −1.0 mA)
V
V
V
CE(sat)
−
−
−0.3
−0.6
C
B
(I = −50 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −1.0 mA)
V
BE(sat)
−
−0.8
−0.9
C
B
(I = −50 mA, I = −5.0 mA)
−0.65
C
B
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
|h |
−
−
fe
(I = −30 mA, V = −30 V, f = 100 MHz)
2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
C
CE
Small−Signal Current Gain
(I = −10 mA, V = −10 V, f = 1 kHz)
h
fe
2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
C
CE
Output Capacitance
C
pF
pF
dB
obo
(V = −20 V, I = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
−
−
10
75
CB
E
Input Capacitance
C
ibo
(V = −1.0 V, I = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
EB
C
Noise Figure
NF
(V = −10 V, I = −0.5 mA, R = 1 kW, f = 100 Hz)
−
−
−
5.0
3.0
3.0
CE
C
g
g
g
(V = −10 V, I = −0.5 mA, R = 1 kW, f = 1.0 kHz)
CE
C
(V = −10 V, I = −0.5 mA, R = 1 kW, f = 10 kHz)
CE
C
SWITCHING CHARACTERISTICS
Delay Time
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
(Reference Figure 11 in MIL−PRF−19500/357)
t
t
−
−
−
−
−
100
100
500
150
600
ns
ns
ns
ns
ns
d
Rise Time
t
r
Storage Time
Fall Time
s
t
f
Turn−Off Time
t
off
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−5 3−Lead
CASE 205AA
ISSUE B
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
A
DETAIL X
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
U
P
C
K
U
SEATING
PLANE
L
A
R
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
F
MILLIMETERS
DIM MIN MAX
INCHES
MIN
NOTE 5
MAX
0.370
0.335
0.260
0.021
0.125
0.019
0.034
0.040
1.750
---
E
A
B
C
D
E
F
8.89
8.00
6.10
0.41
0.23
0.41
0.71
0.73
38.10
6.35
9.40 0.350
8.51 0.315
6.60 0.240
0.53 0.016
3.18 0.009
0.48 0.016
0.86 0.028
1.02 0.029
44.45 1.500
--- 0.250
T
NOTE 7
DETAIL X
NOTES 4 & 6
3X
D
S
M
0.007 (0.18MM)
A
B
C
H
J
K
L
N
2
H
M
N
P
R
T
45 BSC
_
45 BSC
_
1
3
5.08 BSC
0.200 BSC
---
---
1.27
0.050
J
1.37 BSC
--- 0.76
2.54 --- 0.100
0.054 BSC
M
---
0.030
---
LEAD IDENTIFICATION
DETAIL
U
C
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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3
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
A
DETAIL X
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
U
P
C
K
U
SEATING
PLANE
L
A
R
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
F
MILLIMETERS
DIM MIN MAX
INCHES
MIN
NOTE 5
MAX
0.370
0.335
0.260
0.019
0.125
0.019
0.034
0.040
0.580
---
E
A
B
C
D
E
F
8.89
8.00
6.10
0.41
0.23
0.41
0.71
0.73
12.70
6.35
9.40 0.350
8.51 0.315
6.60 0.240
0.48 0.016
3.18 0.009
0.48 0.016
0.86 0.028
1.02 0.029
14.73 0.500
--- 0.250
T
NOTE 7
DETAIL X
NOTES 4 & 6
3X
D
S
M
0.007 (0.18MM)
A
B
C
H
J
K
L
N
2
H
M
N
P
R
T
45 BSC
_
45 BSC
_
1
3
5.08 BSC
0.200 BSC
---
---
1.27
0.050
J
1.37 BSC
--- 0.76
2.54 --- 0.100
0.054 BSC
M
---
0.030
---
LEAD IDENTIFICATION
DETAIL
U
C
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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2N3637/D
相关型号:
JANTX2N3637UB
Small Signal Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
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