KSC2333YTU [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSC2333YTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 局域网 开关 晶体管 |
| 文件： | 总6页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSC2333
High Speed Switching Application
•
•
Low Collector Saturation Voltage
Specified of Reverse Biased SOA With Inductive Load
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
CBO
CEO
EBO
400
7
V
I
2
A
C
I
I
4
A
CP
B
1
15
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
150
J
Storage Temperature
- 55 ~ 150
STG
*PW≤350µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 0.5A, I =0.1A, L = 1mH
V
V
CEO
C
C
B
V
(sus)1
= 0.5A, I = -I = 0.1A
B1 B2
CEX
T
= 125°C, L = 180µH, clamped
C
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 1A, I = 0.2A, -I =0.2A
400
V
CEX
C
B1
B2
T = 125°C, L = 180µH, clamped
C
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
V
V
V
V
= 400V, I = 0
10
1
µA
mA
µA
CBO
CB
CE
CE
CE
E
I
I
I
= 400V, R =51Ω, T = 125°C
BE C
CER
= 400V, V (off) = -5V
10
1
CEX1
CEX2
BE
= 400V, V (off) = -5V @
mA
BE
T
= 125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
80
µA
EBO
EB
C
h
h
V
V
= 5V, I = 0.1A
20
10
FE1
FE2
CE
CE
C
= 5V, I = 0.5A
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 0.5A, I = 0.1A
1
1.2
1
V
V
CE
C
C
B
= 0.5A, I = 0.1A
BE
B
t
t
t
V
I
= 150V, I = 0.5A
µs
µs
µs
ON
CC
C
= - I = 0.1A
Storage Time
B1
B2
2.5
1
STG
F
R = 300Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE1
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1.0
1000
100
10
VCE = 5V
Pulsed
IB = 90mA
IB = 80mA
IB = 100mA
0.8
IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
0.6
0.4
0.2
0.0
IB = 30mA
IB = 20mA
IB = 10mA
1
0
1
2
3
4
5
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
IC= 5IB1 = -5IB2
Pulsed
IC/IB = 5
Pulsed
tstg
1
1
VBE(sat)
tf
ton
0.1
0.1
VCE(sat)
0.01
0.01
10
100
1000
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
10000
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
10
100
1000
0
50
100
150
200
250
300
350
400
450
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical characteristics (Continued)
160
140
120
100
20.0
17.5
15.0
12.5
10.0
7.5
80
S/b Limited
60
Dissipation Limited
40
20
0
5.0
2.5
0.0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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