MJD18002D2 [ONSEMI]
POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor; 功率晶体管2安培1000伏, 50瓦双极NPN晶体管型号: | MJD18002D2 |
厂家: | ONSEMI |
描述: | POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
文件: | 总11页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MJD18002D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector−Emitter Diode and Built−In
Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread ( 150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
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POWER TRANSISTOR
2 AMPERES
1000 VOLTS, 50 WATTS
guarantee an h window.
FE
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I = 100 mA
C
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V
CEsat
• Characteristics Make It Suitable for PFC Application
• Epoxy Meets UL 94 V−0 @ 0.125 in
4
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
2
1
3
• Six Sigma® Process Providing Tight and Reproductible Parameter
Spreads
DPAK
CASE 369C
STYLE 1
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
450
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
V
V
CEO
CBO
MARKING DIAGRAM
1000
1000
11
V
V
CES
EBO
YWW
180
Collector Current − Continuous
Collector Current − Peak (Note 1)
I
2.0
5.0
C
I
CM
02D2G
Base Current
Base Current
− Continuous
I
1.0
2.0
Adc
B
I
BM
− Peak (Note 1)
THERMAL CHARACTERISTICS
Characteristic
Y
WW
= Year
= Work Week
Symbol
Value
Unit
18002D2 = Device Code
Total Device Dissipation @ T = 25°C
P
50
0.4
W
W/°C
C
D
G
= Pb−Free Package
Derate above 25°C
Operating and Storage Temperature Range T , T
−65 to +150
5.0
°C
°C/W
°C/W
°C
J
stg
ORDERING INFORMATION
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
L
†
Device
Package
Shipping
R
71.4
q
MJD18002D2T4
DPAK
3000/Tape & Reel
3000/Tape & Reel
Maximum Lead Temperature for Soldering
T
260
Purposes: 1/8″ from Case for 5 seconds
MJD18002D2T4G
DPAK
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 2
MJD18002D2/D
MJD18002D2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
450
1000
11
570
1100
14
−
−
Vdc
Vdc
C
CEO(sus)
Collector−Base Breakdown Voltage (I
= 1 mA)
V
V
CBO
CBO
EBO
CEO
Emitter−Base Breakdown Voltage (I
= 1 mA)
−
Vdc
EBO
Collector Cutoff Current (V = Rated V
, I = 0)
I
−
−
100
mAdc
mAdc
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
@ T = 25°C
I
−
−
−
−
−
−
100
500
100
CE
CES
EB
C
CES
@ T = 125°C
C
(V = 500 V, V = 0)
@ T = 125°C
CE
EB
C
Emitter−Cutoff Current (V = 10 Vdc, I = 0)
I
−
−
500
mAdc
EB
C
EBO
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
V
V
Vdc
BE(sat)
(I = 0.4 Adc, I = 40 mAdc)
@ T = 25°C
0.78
0.87
1.0
1.1
C
B
C
−
−
(I = 1.0 Adc, I = 0.2 Adc)
@ T = 25°C
C
B
C
Collector−Emitter Saturation Voltage
(I = 0.4 Adc, I = 40 mAdc)
@ T = 25°C
−
−
0.36
0.50
0.6
1.0
Vdc
C
CE(sat)
@ T = 125°C
C
B
C
(I = 1.0 Adc, I = 0.2 Adc)
@ T = 25°C
−
−
0.40
0.65
0.75
1.2
C
B
C
@ T = 125°C
C
DC Current Gain
@ T = 25°C
h
FE
14
8.0
25
15
−
−
C
−
(I = 0.4 Adc, V = 1.0 Vdc)
C
@ T = 125°C
CE
C
(I = 1.0 Adc, V = 1.0 Vdc)
@ T = 25°C
6.0
4.0
10
6.0
−
−
C
CE
C
@ T = 125°C
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1 MHz)
f
t
−
−
−
13
50
−
MHz
pF
C
CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1 MHz)
C
ob
100
500
CB
E
Input Capacitance (V = 8 Vdc)
C
ib
340
pF
EB
DIODE CHARACTERISTICS
Forward Diode Voltage
V
Vdc
ns
EC
(I = 1.0 Adc)
EC
@ T = 25°C
−
−
−
1.2
1.0
0.6
1.5
1.3
−
C
(I = 0.4 Adc)
EC
@ T = 25°C
C
@ T = 125°C
C
Forward Recovery Time
t
fr
(I = 0.4 Adc, di/dt = 10 A/ms)
@ T = 25°C
−
−
517
480
−
−
F
C
(I = 1.0 Adc, di/dt = 10 A/ms)
F
@ T = 25°C
C
DYNAMIC SATURATION VOLTAGE
V
−
−
−
−
7.4
2.5
−
−
−
−
V
@ 1 ms @ T = 25°C
I
= 0.4 Adc
C
CE(dsat)
C
I
= 40 mA
B1
Dynamic Saturation Voltage
Determinated 1 ms and 3 ms
@ 3 ms @ T = 25°C
C
V
= 300 Vdc
CC
respectively after rising I reaches
B1
@ 1 ms @ T = 25°C
11.7
1.3
I
I
= 1 Adc
C
C
90% of final I
B1
= 0.2 A
B1
@ 3 ms @ T = 25°C
C
V
= 300 Vdc
CC
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2
MJD18002D2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
@ T = 25°C
t
−
−
225
375
350
−
ns
ms
ns
ms
C
on
I
= 0.4 Adc, I = 40 mAdc
B1
@ T = 125°C
C
C
I
V
= 200 mAdc
B2
@ T = 25°C
t
0.8
−
−
1.5
1.1
−
C
off
= 300 Vdc
CC
@ T = 125°C
C
@ T = 25°C
t
−
−
100
94
150
−
C
on
I
= 1.0 Adc, I = 0.2 Adc
B1
@ T = 125°C
C
C
I
= 0.5 Adc
= 300 Vdc
B2
@ T = 25°C
t
0.95
−
−
1.5
1.25
−
C
off
V
CC
@ T = 125°C
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 mH)
CC
clamp
Fall Time
@ T = 25°C
t
−
−
130
120
175
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
C
f
@ T = 125°C
C
I
B1
= 0.4 Adc
= 40 mAdc
= 0.2 Adc
C
Storage Time
Cross−over Time
Fall Time
@ T = 25°C
t
t
0.4
−
−
0.7
0.7
−
C
s
c
I
@ T = 125°C
C
I
B2
@ T = 25°C
−
−
110
100
175
−
C
@ T = 125°C
C
@ T = 25°C
t
−
−
130
140
175
−
C
f
@ T = 125°C
C
I
B1
B2
= 0.8 Adc
= 160 mAdc
= 160 mAdc
C
Storage Time
Cross−over Time
Fall Time
@ T = 25°C
t
t
2.1
−
−
3.0
2.4
−
C
s
c
I
I
@ T = 125°C
C
@ T = 25°C
−
−
275
350
350
−
C
@ T = 125°C
C
@ T = 25°C
t
−
−
100
100
150
−
C
f
@ T = 125°C
C
I
= 1.0 Adc
= 0.2 Adc
= 0.5 Adc
C
Storage Time
Cross−over Time
@ T = 25°C
t
t
−
−
1.05
1.45
1.2
−
C
s
c
I
I
B1
B2
@ T = 125°C
C
@ T = 25°C
−
−
100
115
150
−
C
@ T = 125°C
C
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MJD18002D2
Typical Static Characteristics
100
80
100
V
= 1 V
V
= 5 V
CE
CE
80
60
40
T = 125°C
T = 125°C
J
J
60
25°C
25°C
40
−20°C
−20°C
20
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 V
Figure 2. DC Current Gain @ 5 V
4
3
2
100
10
T = 25°C
J
I /I = 20
C
B
2 A
1.5 A
1 A
1
400 mA
25°C
1
0
T = 125°C
J
I
= 200 mA
C
−20°C
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , BASE CURRENT (AMPS)
B
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
100
10
10
I /I = 10
I /I = 5
C
B
C
B
1
1
25°C
25°C
T = 125°C
J
T = 125°C
J
−20°C
0.001
−20°C
0.001
0.1
0.1
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
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MJD18002D2
Typical Static Characteristics
10
10
I /I = 5
I /I = 10
C B
C
B
1
1
−20°C
25°C
−20°C
25°C
T = 125°C
J
T = 125°C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Base−Emitter Saturation Region
IC/IB = 5
Figure 8. Base−Emitter Saturation Region
IC/IB = 10
10
10
I /I = 20
C
B
V
= −20°C
EC(V)
1
1
−20°C
25°C
125°C
25°C
T = 125°C
J
0.1
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
REVERSE EMITTER−COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
IC/IB = 20
Figure 10. Forward Diode Voltage
Typical Switching Characteristics
1000
100
3000
T = 25°C
J
T = 125°C
T = 25°C
J
J
C
ib
(pF)
f(test) = 1 MHz
2500
2000
1500
1000
I /I = 10
C
B
I
= I
Boff
VCC = 300 V
PW = 40 ms
Bon
C
(pF)
ob
10
1
500
0
I /I = 5
C
B
1
10
100
0.1
0.4
0.7
1
1.3
1.6
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Capacitance
Figure 12. Resistive Switch Time, ton
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MJD18002D2
Typical Switching Characteristics
5.5
5.0
4.5
4.0
3.5
3.0
2.5
3
T = 125°C
T = 25°C
J
I
= I
Boff
J
Bon
T = 125°C
J
VCC = 300 V
PW = 40 ms
2.5
2
T = 25°C
J
I /I = 10
C
B
I
V
V
= I
,
Bon
Boff
= 15 V,
= 300 V
= 200 mH
CC
I /I = 5
C
1.5
1
B
Z
L
C
2.0
1.5
0.1
0.4
0.7
1
1.3
1.6
0
0.5
1
1.5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 13. Resistive Switch Time, toff
Figure 14. Inductive Storage Time, tsi @ IC/IB = 5
700
600
500
400
300
200
4
3
2
T = 125°C
T = 25°C
J
I /I
C
= 5
T = 125°C
T = 25°C
J
J
Bon
J
I
= I
= 15 V,
= 300 V
= 200 mH
,
Boff
Bon
V
V
L
CC
I
V
V
L
= I
,
Z
Bon
Boff
t
= 15 V,
= 300 V
= 200 mH
c
C
CC
I
= 1 A
Z
C
C
t
fi
I
= 300 mA
1
0
C
100
0
0
0.5
1
1.5
3
6
9
12
15
I , COLLECTOR CURRENT (AMPS)
C
h , FORCED GAIN
FE
Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5
Figure 16. Inductive Storage Time
1000
1800
1200
T = 125°C
T = 25°C
J
T = 125°C
J
J
T = 25°C
J
800
600
400
I
V
V
= I
,
I
= I
,
Boff
Bon
Boff
Bon
I
= 1 A
C
= 15 V,
= 300 V
= 200 mH
V
V
= 15 V,
CC
CC
I
= 1 A
C
= 300 V
Z
Z
L
L
C
= 200 mH
C
600
0
I
= 0.3 A
C
200
0
I
= 0.3 A
13
C
3
5
7
9
11
15
3
6
9
12
15
h , FORCED GAIN
FE
h , FORCED GAIN
FE
Figure 17. Inductive Fall Time
Figure 18. Inductive Cross−Over Time
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MJD18002D2
Typical Switching Characteristics
1600
1.6
I
= I
,
Boff
Bon
V
V
= 15 V,
= 300 V
= 200 mH
CC
I /I = 5
C
B
Z
T = 125°C
T = 25°C
J
1200
800
J
1.2
0.8
L
C
t
c
t
fi
I
= I /2,
= 15 V,
= 300 V
= 200 mH
Boff
C
I /I = 10
400
0
0.4
0
C
B
V
V
L
CC
T = 125°C
T = 25°C
J
J
Z
C
0.3
0.7
1.1
1.5
0
0.5
1
1.5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 19. Inductive Switching Time,
tfi & TC @ G = 10
Figure 20. Inductive Switching Time, tsi
200
150
300
250
200
150
T = 125°C
T = 25°C
J
T = 125°C
T = 25°C
J
I
V
V
= I /2,
= 15 V,
CC
= 300 V
= 200 mH
J
J
Boff
C
I
V
V
= I /2,
= 15 V,
= 300 V
= 200 mH
Boff
C
CC
Z
Z
L
C
L
C
I /I = 10
C
B
I /I = 5
100
50
C
B
100
50
I /I = 10
C
B
I /I = 5
C
B
0
0.5
1
1.5
0
0.5
1
1.5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 21. Inductive Storage Time, tfi
Figure 22. Inductive Storage Time, tc
2.4
2.2
2.0
1.8
1.6
1.4
I
= I
= 15 V,
= 300 V
= 200 mH
,
I = 200 mA
B
Bon
Boff
V
V
L
CC
Z
C
I
= 50 mA
B
I
= 500 mA
B
I
= 100 mA
B
1.2
1
0
0.4
0.8
, FORCED GAIN
1.2
1.6
h
FE
Figure 23. Inductive Storage Time, tsi
Figure 24. Dynamic Saturation Voltage
Measurements
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MJD18002D2
Typical Switching Characteristics
10
9
90% I
I
C
C
C
t
fi
8
t
si
7
6
10% V
clamp
10% I
V
5
clamp
t
c
4
90% I
B1
I
B
3
2
1
0
0
1
2
3
4
5
6
7
8
TIME
Figure 25. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
I PEAK
C
100 mF
1 mF
100 W
3 W
MTP8P10
150 W
3 W
V
PEAK
CE
V
CE
MTP8P10
R
MPF930
B1
I
B1
MUR105
MJE210
MPF930
I
+10 V
I
B
out
A
I
B2
50
R
B2
W
V
L = 10 mH
Inductive Switching
RBSOA
L = 500 mH
COMMON
(BR)CEO(sus)
MTP12N10
150 W
3 W
L = 200 mH
R
500 mF
R
= ∞
= 20 Volts
= 100 mA
= 0
= 15 Volts
selected for
R
= 0
= 15 Volts
selected for
B2
B2
B2
V
I
V
V
CC
CC
CC
R
ꢀdesired I
R
B1
1 mF
C(pk)
B1
ꢀdesired I
B1
B1
−V
off
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MJD18002D2
12
10
8
10
V
FRM
V
(1.1 V ) Unless
F
FR
10 ms
50 ms
1 ms
Otherwise Specified
5 ms
1 ms
DC
1
V
F
0.1 V
F
t
fr
6
0.1
4
10% I
2
0
F
0.01
0
2
4
6
8
10
10
100
1000
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 26. tfr Measurement
Figure 27. Forward Bias Safe Operating Area
1
0.8
0.6
0.4
2.5
T
= 125°C
C
Second Breakdown Derating
Gain = 4
= 500 mH
2
1.5
1
L
C
V
= −1.5 V
BE(off)
Thermal Derating
V
= −5 V
BE(off)
0.5
0
0.2
0
V
= 0 V
BE
0
200
400
600
800
1000
1200
20
40
60
80
100
120
140
160
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
T , CASE TEMPERATURE (°C)
C
Figure 28. Reverse Bias Safe Operating Area
Figure 29. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
Figure 27 may be found at any case temperature by using the
appropriate curve on Figure 29.
breakdown. Safe operating area curves indicate I −V
T
may be calculated from the data in Figure 30. At any
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 27 is
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 28). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
based on T = 25°C; T
is variable depending on power
level. Second breakdown pulse limits are valid for duty
C
J(pk)
cycles to 10% but must be derated when T > 25°C. Second
C
Breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
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9
MJD18002D2
1
0.5
0.2
0.1
0.05
0.1
R
R
= r(t) R
q
JC
= 55°/W MAX
q
q
JC(t)
P
(pk)
0.02
0.01
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
t
2
1
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
T
− T = P
C
R
(t)
q
(pk) JC
J(pk)
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2
1100
440
di/dt = 10 A/ms
T = 25°C
C
B
(Volts) @ 10 mA
VCER
1000
900
800
700
600
420
400
380
360
340
T = 25°C
J
B
@ 200 mA
100
VCER(sus)
500
400
320
300
10
1000
()
10,000
100,000
0
0.5
1
1.5
2
R
I , FORWARD CURRENT (AMPS)
F
BE
Figure 31. BVCER
Figure 32. Forward Recovery Time, tfr
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10
MJD18002D2
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Six Sigma is a registered trademark and servicemark of Motorola, Inc.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJD18002D2/D
相关型号:
MJD200I
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
FAIRCHILD
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