MJF18004G [ONSEMI]
NPN Bipolar Power Transistor For Switching Power Supply Applications; NPN双极型功率晶体管开关电源的应用
| 型号： | MJF18004G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Power Transistor For Switching Power Supply Applications |
| 文件： | 总11页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE18004G, MJF18004G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
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Features
POWER TRANSISTOR
5.0 AMPERES
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain h
♦ Fast Switching
FE
1000 VOLTS
35 and 75 WATTS
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125_C
MARKING
DIAGRAMS
• ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
• Two Package Choices: Standard TO−220 or Isolated TO−220
• MJF18004, Case 221D, is UL Recognized at 3500 V
: File
RMS
#E69369
• These Devices are Pb−Free and are RoHS Compliant*
MJE18004G
AYWW
MAXIMUM RATINGS
TO−220AB
CASE 221A−09
STYLE 1
Rating
Symbol
Value
450
Unit
1
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
V
CEO
Vdc
Vdc
Vdc
Adc
2
3
V
V
1000
9.0
CES
EBO
Collector Current − Continuous
− Peak (Note 1)
I
5.0
10
C
I
CM
Base Current
− Continuous
I
2.0
4.0
Adc
V
B
− Peak (Note 1)
I
BM
MJF18004G
AYWW
RMS Isolation Voltage (Note 2)
V
MJF18004
4500
ISOL
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
3500
1500
TO−220 FULLPACK
CASE 221D
1
(for 1 sec, R.H. < 30%, T = 25_C)
A
2
3
STYLE 2
Total Device Dissipation @ T = 25_C
P
W
W/_C
C
D
UL RECOGNIZED
MJE18004
MJF18004
MJE18004
MJF18004
75
35
0.6
0.28
Derate above 25°C
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
Operating and Storage Temperature
T , T
−65 to 150
_C
J
stg
THERMAL CHARACTERISTICS
= Work Week
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R
q
JC
_C/W
MJE18004
1.65
3.55
ORDERING INFORMATION
MJF18004
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Thermal Resistance, Junction−to−Ambient
R
62.5
260
_C/W
_C
q
JA
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2. Proper strike and creepage distance must be provided.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
April, 2010 − Rev. 9
MJE18004/D
MJE18004G, MJF18004G
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
450
−
−
−
Vdc
mAdc
mAdc
C
CEO(sus)
Collector Cutoff Current (V = Rated V
, I = 0)
I
CEO
−
100
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
(T = 25_C)
I
−
−
−
−
−
−
100
500
100
CE
CES EB
C
CES
(T = 125_C)
C
Collector Cutoff Current (V = 800 V, V = 0)
(T = 125_C)
C
CE
EB
Emitter Cutoff Current (V = 9.0 Vdc, I = 0)
I
−
−
100
mAdc
EB
C
EBO
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc)
V
V
−
−
0.82
0.92
1.1
1.25
Vdc
Vdc
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc)
C
B
Collector−Emitter Saturation Voltage
CE(sat)
(I = 1.0 Adc, I = 0.1 Adc)
0.5
0.6
0.45
0.8
C
B
−
−
−
−
−
0.25
0.29
0.3
0.36
0.5
(T = 125_C)
C
(I = 2.0 Adc, I = 0.4 Adc)
C
B
(T = 125_C)
C
(I = 2.5 Adc, I = 0.5 Adc)
0.75
C
B
DC Current Gain (I = 1.0 Adc, V = 2.5 Vdc)
h
FE
12
−
14
−
6.0
−
10
21
20
−
32
11
7.5
22
−
−
34
−
−
−
−
C
CE
(T = 125_C)
C
DC Current Gain (I = 0.3 Adc, V = 5.0 Vdc)
C
CE
(T = 125_C)
C
DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc)
C
CE
(T = 125_C)
C
DC Current Gain (I = 10 mAdc, V = 5.0 Vdc)
−
C
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)
f
T
−
−
−
13
50
−
MHz
pF
C
CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
ob
65
CB
E
Input Capacitance (V = 8.0 V)
C
800
1000
pF
EB
ib
CE(dsat)
Dynamic Saturation Voltage:
V
−
−
6.8
14
−
−
Vdc
1.0 ms
3.0 ms
1.0 ms
3.0 ms
(I = 1.0 Adc
(T = 125°C)
C
C
I
= 100 mAdc
Determined 1.0 ms and
3.0 ms respectively after
B1
−
−
2.4
5.6
−
−
V
CC
= 300 V)
(T = 125°C)
C
rising I reaches 90% of
B1
final I
B1
−
−
11.3
15.5
−
−
(see Figure 18)
(I = 2.0 Adc
(T = 125°C)
C
C
I
= 400 mAdc
B1
−
−
1.3
6.1
−
−
V
CC
= 300 V)
(T = 125°C)
C
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2
MJE18004G, MJF18004G
ELECTRICAL CHARACTERISTICS — continued (T = 25_C unless otherwise specified)
C
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
Turn−On Time
Storage Time
Fall Time
(I = 1.0 Adc, I = 0.1 Adc,
t
on
−
−
210
180
300
−
ns
ms
ns
ms
ns
ms
ns
C
B1
I
= 0.5 Adc, V = 300 V)
(T = 125°C)
B2
CC
C
t
−
−
1.0
1.3
1.7
−
off
on
(T = 125°C)
C
(I = 2.0 Adc, I = 0.4 Adc,
t
−
−
75
90
110
−
C
B1
I
B1
= 1.0 Adc, V = 300 V)
(T = 125°C)
C
CC
t
off
−
−
1.5
1.8
2.5
−
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
t
on
−
−
450
900
800
1400
C
B1
I
B2
= 0.5 Adc, V = 250 V)
(T = 125°C)
C
CC
t
−
−
2.0
2.2
3.0
3.5
s
(T = 125°C)
C
t
f
−
−
275
500
400
800
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 mH)
CC
clamp
Fall Time
(I = 1.0 Adc, I = 0.1 Adc,
t
fi
−
−
100
100
150
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
C
B1
I
B2
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
−
−
1.1
1.4
1.7
−
(T = 125°C)
C
t
c
−
−
180
160
250
−
(T = 125°C)
C
(I = 2.0 Adc, I = 0.4 Adc,
t
fi
−
−
90
150
175
−
C
B1
I
B2
= 1.0 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
−
−
1.7
2.2
2.5
−
(T = 125°C)
C
t
−
−
180
250
300
−
c
fi
(T = 125°C)
C
(I = 2.5 Adc, I = 0.5 Adc,
t
−
−
70
100
130
175
C
B1
I
B2
= 0.5 Adc,
(T = 125°C)
C
V
BE(off)
= −ꢀ5.0 Vdc)
Storage Time
Crossover Time
t
si
−
−
0.75
1.0
1.0
1.3
(T = 125°C)
C
t
c
−
−
250
250
350
500
(T = 125°C)
C
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MJE18004G, MJF18004G
TYPICAL STATIC CHARACTERISTICS
100
100
V
CE
= 1 V
V
CE
= 5 V
T = 125°C
J
T = 125°C
J
T = -ꢀ20°C
J
T = -ꢀ20°C
J
T = 25°C
J
T = 25°C
J
10
10
1
0.01
1
0.01
0.10
1.00
10.00
0.10
1.00
10.00
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2.0
1.5
1.0
10.00
1.00
T = 25°C
J
1.5 A
2 A 3 A
4 A
1 A
I /I = 10
C B
0.10
0.01
0.5
0
I /I = 5
C B
T = 25°C
T = 125°C
J
J
I = 0.5 A
C
0.01
0.10
1.00
10.00
0.01
0.10
COLLECTOR CURRENT (AMPS)
C,
1.00
10.00
I , BASE CURRENT (AMPS)
B
I
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.1
1.0
10000
1000
100
T = 25°C
J
f = 1 MHz
C
C
ib
0.9
0.8
0.7
ob
T = 25°C
J
0.6
0.5
0.4
10
1
T = 125°C
J
I /I = 10
C B
I /I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
I , COLLECTOR CURRENT (AMPS)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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4
MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
1800
3000
2500
2000
1500
1000
I /I = 5
C B
I
= I /2
B(off) C
= 300 V
I
= I /2
B(off) C
= 300 V
1600
1400
1200
1000
800
600
400
200
0
T = 25°C
T = 125°C
J
J
T = 25°C
T = 125°C
J
V
J
CC
V
CC
PW = 20 ms
PW = 20 ms
I /I = 5
C B
I /I = 10
C B
I /I = 10
C B
500
0
0
1
2
3
4
5
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
V = 300 V
Z
V = 300 V
Z
T = 25°C
T = 125°C
J
J
V
I
= 15 V
= I /2
CC
V
= 15 V
= I /2
CC
I /I = 5
C B
B(off)
C
I
B(off) C
L = 200 mH
C
L = 200 mH
C
I = 2 A
C
1000
500
T = 25°C
T = 125°C
J
I = 1 A
C
J
500
0
I /I = 10
C B
0
1
2
3
4
5
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
I COLLECTOR CURRENT (AMPS)
C
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
200
150
100
250
200
150
100
T = 25°C
T = 125°C
J
J
t
fi
t
c
t
c
V = 300 V
Z
V = 300 V
Z
V
I
= 15 V
= I /2
50
0
V
I
= 15 V
= I /2
CC
CC
T = 25°C
T = 125°C
J
50
0
J
B(off)
C
B(off)
C
t
fi
L = 200 mH
C
L = 200 mH
C
0
1
2
3
4
5
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching, tc and tfi, IC/IB = 5
Figure 12. Inductive Switching, tc and tfi, IC/IB = 10
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MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
160
150
140
130
120
110
100
90
300
250
200
150
V = 300 V
Z
V = 300 V
Z
T = 25°C
T = 125°C
J
J
V
I
= 15 V
= I /2
V
I
= 15 V
= I /2
CC
CC
I = 1 A
C
B(off)
C
B(off)
C
L = 200 mH
C
L = 200 mH
C
I = 2 A
C
I = 2 A
C
100
50
T = 25°C
J
80
70
T = 125°C
J
I = 1 A
C
3
4
5
6
7
8
9
10 11 12 13 14 15
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
h
FE
, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
6.0
T
≤ 125°C
C
DC (MJE18004)
5ꢁms
I /I ≥ 4
C B
5.0
1ꢁms
50ꢁms 10ꢁms 1ꢁms
L = 500 mH
C
10
1.0
4.0
Extended
SOA
3.0
2.0
DC (MJF18004)
0.1
-ꢀ5 V
1.0
0
V
=
-1.5 V
BE(off)
0 V
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
400
500
600
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
700
800
900
1000
1100
V
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Safe Operating Area
There are two limitations on the power handling ability of a tran-
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC−VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC ≥ 25°C. Second break-
down limitations do not derate the same as thermal limitations. Al-
lowable current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figures 20 and 21. At any
case temperatures, thermal limitations will reduce the power that
can be handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base−to−emitter
junction reverse biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava-
lanche mode.
1.0
SECOND
BREAKDOWN
DERATING
0.8
0.6
0.4
0.2
0
THERMAL
DERATING
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
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6
MJE18004G, MJF18004G
10
5
4
V
CE
90% I
I
C
C
9
8
7
6
5
t
fi
3
dyn 1 ms
t
si
2
dyn 3 ms
1
t
c
10% I
C
V
10% V
CLAMP
0
CLAMP
-1
-2
-3
-4
-5
4
3
2
1
0
90% I
B
I
B
90% I 1
B
1 ms
3 ms
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I PEAK
C
100 mF
1 mF
MTP8P10
MUR105
MJE210
100 W
3 W
150 W
3 W
V
CE
PEAK
V
CE
MTP8P10
MPF930
R
R
B1
I 1
B
I
MPF930
+10 V
out
I
B
A
I 2
B
50 W
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
RBSOA
COMMON
MTP12N10
150 W
3 W
L = 500 mH
RB2 = 0
RB2 = ∞
500 mF
V
= 20 VOLTS
I (pk) = 100 mA
V
CC
= 15 VOLTS
V
CC
= 15 VOLTS
CC
RB1 SELECTED FOR
DESIRED I 1
RB1 SELECTED
FOR DESIRED I 1
C
1 mF
B
B
-V
off
Table 1. Inductive Load Switching Drive Circuit
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MJE18004G, MJF18004G
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
P
(pk)
R
R
(t) = r(t) R
q
JC
q
JC
0.10
= 1.25°C/W MAX
q
JC
0.1
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
t
1
0.05
0.02
1
t
2
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.10
0.01
0.01
1.00
10.00
100.00
1000
10000
100000
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18004
1.00
D = 0.5
0.2
P
(pk)
R
R
(t) = r(t) R
q
JC
q
JC
0.10
0.1
= 3.12°C/W MAX
q
JC
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.05
0.02
t
1
1
t
2
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.01
0.10
1.00
10.00
100.00
1000
t, TIME (ms)
Figure 21. Typical Thermal Response for MJF18004
ORDERING INFORMATION
Device
Package
Shipping
MJE18004
TO−220AB
50 Units / Rail
50 Units / Rail
MJE18004G
TO−220AB
(Pb−Free)
MJF18004
TO−220 (Fullpack)
50 Units / Rail
50 Units / Rail
MJF18004G
TO−220 (Fullpack)
(Pb−Free)
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MJE18004G, MJF18004G
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
CLIP
0.099″ MIN
0.099″ MIN
LEADS
LEADS
LEADS
HEATSINK
HEATSINK
HEATSINK
0.110″ MIN
Figure 22a. Screw or Clip Mounting
Position for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw−Mounted
Figure 23b. Clip−Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
.
screw torque of 6 to 8 in lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in lbs will
.
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affecting the
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom-
.
mend exceeding 10 in lbs of mounting torque under any mounting conditions.
**For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
9
MJE18004G, MJF18004G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
http://onsemi.com
10
MJE18004G, MJF18004G
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
−T−
PLANE
−B−
C
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
MAX
16.12
10.63
4.83
0.78
3.02
A
A
B
C
D
F
0.625
0.408
0.180
0.026
0.116
0.635 15.88
0.418 10.37
0.190
0.031
0.119
4.57
0.65
2.95
1
2 3
−Y−
G
H
J
0.100 BSC
2.54 BSC
K
0.125
0.018
0.530
0.048
0.135
0.025
3.18
0.45
3.43
0.63
K
L
0.540 13.47
1.23
13.73
1.36
5.08 BSC
0.053
G
N
L
J
N
Q
R
S
U
0.200 BSC
R
0.124
0.099
0.101
0.238
0.128
0.103
0.113
0.258
3.15
2.51
2.57
6.06
3.25
2.62
2.87
6.56
D 3 PL
M
M
STYLE 2:
PIN 1. BASE
0.25 (0.010)
B
Y
2. COLLECTOR
3. EMITTER
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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