MM74HC126MTCX [ONSEMI]

3 态四路缓冲器;
MM74HC126MTCX
型号: MM74HC126MTCX
厂家: ONSEMI    ONSEMI
描述:

3 态四路缓冲器

驱动 光电二极管 逻辑集成电路
文件: 总11页 (文件大小:341K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
3-STATE Quad Buffers  
14  
SOIC14  
1
MM74HC125, MM74HC126  
CASE 751A03  
General Description  
14  
The MM74HC125 and MM74HC126 are general purpose 3STATE  
high speed noninverting buffers utilizing advanced silicongate  
CMOS technology. They have high drive current outputs which enable  
high speed operation even when driving large bus capacitances.  
These circuits possess the low power dissipation of CMOS circuitry,  
yet have speeds comparable to low power Schottky TTL circuits. Both  
circuits are capable of driving up to 15 low power Schottky inputs.  
The MM74HC125 require the 3STATE control input C to be taken  
high to put the output into the high impedance condition, whereas  
the MM74HC126 require the control input to be low to put the output  
into high impedance.  
1
SOIC14  
CASE 751EF  
14  
1
TSSOP14 WB  
CASE 948G  
All inputs are protected from damage due to static discharge by  
diodes to VCC and ground.  
MARKING DIAGRAM  
Features  
Typical Propagation Delay: 13 ns  
14  
Wide Operating Voltage Range: 2 V – 6 V  
Low Input Current: 1 mA Maximum  
Low Quiescent Current: 160 mA maximum (74HC Series)  
Fanout of 15 LSTTL Loads  
HC12XA  
AWLYWW  
1
SOIC14  
These Devices are PbFree, Halide Free and are RoHS Compliant  
14  
HC  
12XA  
ALYW  
1
TSSOP14 WB  
HC12XA= Specific Device Code  
(X = 5 or 6)  
A
= Assembly Location  
WL, L = Wafer Lot  
= Year  
Y
WW, W = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 1983  
1
Publication Order Number:  
November, 2022 Rev. 2  
MM74HC126/D  
MM74HC125, MM74HC126  
Connection Diagram  
V
C4  
13  
A4  
12  
Y4  
11  
C3  
10  
A3  
Y3  
V
C4  
13  
A4  
12  
Y4  
11  
C3  
10  
A3  
Y3  
CC  
CC  
14  
9
8
14  
9
8
1
2
3
4
5
6
7
1
2
3
4
5
6
7
C1  
A1  
Y1  
C2  
Y2  
GND  
C1  
A1  
Y1  
C2  
Y2  
GND  
A2  
A2  
Top View (MM74HC125)  
Top View (MM74HC126)  
Figure 1. Pin Assignments for SOIC and TSSOP  
TRUTH TABLE (MM74HC125) TRUTH TABLE (MM74HC126)  
Inputs  
Output  
Inputs  
Output  
A
H
L
C
L
Y
H
L
A
H
L
C
H
H
L
Y
H
L
L
X
H
Z
X
Z
www.onsemi.com  
2
MM74HC125, MM74HC126  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Parameter  
Rating  
V
CC  
Supply Voltage  
–0.5 to +7.0 V  
V
IN  
DC Input Voltage  
–0.5 to V + 0.5 V  
CC  
V
DC Output Voltage  
Clamp Diode Current  
DC Output Current, per Pin  
–0.5 to V + 0.5 V  
OUT  
CC  
I , I  
IK OK  
20 mA  
35 mA  
I
OUT  
I
DC V or GND Current, per Pin  
70 mA  
CC  
CC  
T
Storage Temperature Range  
Power Dissipation  
–65°C to +150°C  
600 mW  
STG  
P
Note 2  
D
S.O. Package Only  
500 mW  
T
L
Lead Temperature (Soldering 10 Seconds)  
260°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Unless otherwise specified all voltages are referenced to ground.  
2. Power Dissipation temperature derating plastic “N” package: –12 mW/°C from 65°C to 85°C.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2
Max  
Unit  
V
V
CC  
Supply Voltage  
6
V
, V  
DC Input or Output Voltage  
Operating Temperature Range  
Input Rise or Fall Time  
0
V
V
IN OUT  
CC  
T
A
–55  
+125  
1000  
500  
°C  
ns  
ns  
ns  
t , t  
r
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
f
400  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
3
 
MM74HC125, MM74HC126  
DC CHARACTERISTICS (Note 3)  
T
= 40°C  
T = 55°C  
A
A
to 85°C  
to 125°C  
T
A
= 25°C  
Typ  
Guaranteed Limits  
Symbol  
Parameter  
Conditions  
V
CC  
(V)  
Unit  
V
IH  
Minimum HIGH Level Input  
Voltage  
2.0  
1.5  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
0.5  
1.35  
1.8  
1.9  
4.4  
5.9  
3.7  
V
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
4.5  
3.15  
4.2  
V
IL  
Maximum LOW Level Input  
Voltage  
0.5  
0.5  
V
V
1.35  
1.8  
1.35  
1.8  
V
OH  
Minimum HIGH Level Output  
Voltage  
V
|I  
= V or V ,  
2.0  
4.5  
6.0  
4.2  
1.9  
1.9  
IN  
IH  
IL  
| 20 mA  
OUT  
4.4  
4.4  
5.9  
5.9  
V
IN  
= V or V ,  
3.98  
3.84  
IH  
IL  
|I  
| 6.0 mA  
OUT  
V
OUT  
= V or V ,  
6.0  
5.7  
5.48  
5.34  
5.2  
IN  
IH  
IL  
|I  
| 7.8 mA  
V
OL  
Maximum LOW Level Output  
Voltage  
V
|I  
= V or V ,  
OUT  
2.0  
4.5  
6.0  
4.5  
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.4  
V
IN  
IH  
IL  
| 20 mA  
0
0.1  
0.1  
V
= V or V ,  
0.2  
0.26  
0.33  
IN  
IH  
IL  
|I  
| 6.0 mA  
OUT  
V
OUT  
= V or V ,  
6.0  
6.0  
0.2  
0.26  
0.5  
0.33  
5
0.4  
10  
IN  
IH  
IL  
|I  
| 7.8 mA  
I
Maximum 3STATE Output  
Leakage Current  
V
V
= V or V ,  
mA  
OZ  
IN  
OUT  
IH  
IL  
= V or GND  
CC  
C = Disabled  
n
I
Maximum Input Current  
V
V
= V or GND  
6.0  
6.0  
0.1  
8.0  
1.0  
80  
1.0  
mA  
mA  
IN  
IN  
CC  
I
Maximum Quiescent Supply  
Current  
= V or GND,  
160  
CC  
IN  
CC  
I
= 0 mA  
OUT  
3. For a power supply of 5 V 10% the worst case output voltages (V , and V ) occur for HC at 4.5 V. Thus the 4.5 V values should be used  
OH  
OL  
when designing with this supply. Worst case V and V occur at V = 5.5 V and 4.5 V respectively. (The V value at 5.5 V is 3.85 V.) The  
IH  
IL  
CC  
IH  
worst case leakage current (I , I , and I ) occur for CMOS at the higher voltage and so the 6.0 V values should be used.  
IN CC  
OZ  
www.onsemi.com  
4
 
MM74HC125, MM74HC126  
AC CHARACTERISTICS (V = 5 V, T = 25°C, C = 45 pF, t = t = 6 ns)  
CC  
A
L
r
f
Guaranteed  
Limit  
Symbol  
, t  
Parameter  
Conditions  
Typ  
13  
13  
17  
18  
13  
Unit  
ns  
t
Maximum Propagation Delay Time  
18  
25  
25  
25  
25  
PHL PLH  
t
t
Maximum Output Enable Time to HIGH Level  
Maximum Output Disable Time from HIGH Level  
Maximum Output Enable Time to LOW Level  
Maximum Output Disable Time from LOW Level  
R = 1 kW  
ns  
PZH  
PHZ  
L
R = 1 kW, C = 5 pF  
ns  
L
L
t
t
R = 1 kW  
ns  
PZL  
L
R = 1 kW, C = 5 pF  
ns  
PLZ  
L
L
AC CHARACTERISTICS (V = 2.0 V to 6.0 V, C = 50 pF, t = t = 6 ns (unless otherwise specified))  
CC  
L
r
f
T
= 40°C  
T = 55°C  
A
A
to 85°C  
to 125°C  
T
A
= 25°C  
Typ  
40  
14  
12  
35  
14  
12  
25  
14  
12  
25  
14  
12  
35  
15  
13  
30  
7
Guaranteed Limits  
Symbol  
, t  
Parameter  
V
CC  
(V)  
Conditions  
Unit  
t
t
Maximum Propagation Delay Time  
2.0  
100  
125  
25  
21  
163  
33  
28  
156  
31  
26  
156  
31  
26  
175  
35  
30  
75  
15  
13  
10  
20  
150  
30  
25  
195  
39  
39  
188  
38  
31  
188  
38  
31  
210  
42  
36  
90  
18  
15  
10  
20  
ns  
PHL PLH  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
20  
17  
130  
26  
22  
125  
25  
21  
125  
25  
21  
140  
28  
24  
60  
12  
10  
10  
20  
, t  
Maximum Propagation Delay Time  
Maximum Output Enable Time  
Maximum Output Disable Time  
Maximum Output Enable Time  
Maximum Output Rise and Fall Time  
C = 150 pF,  
ns  
ns  
ns  
ns  
ns  
PLH PHL  
L
t
t
t
, t  
R = 1 kW  
L
PZH PZL  
, t  
R = 1 kW  
L
PHZ PLZ  
, t  
C = 150 pF,  
L
R = 1 kW  
PZL PZH  
L
t
, t  
C = 50 pF  
TLH THL  
L
6
C
IN  
Input Capacitance  
5
pF  
pF  
pF  
C
OUT  
Output Capacitance Outputs  
15  
45  
6
C
PD  
Power Dissipation Capacitance  
(per gate) (Note 4)  
Enabled  
Disabled  
2
4. C determines the no load dynamic power consumption, P = C  
V
f + I  
V
, and the no load dynamic current consumption,  
PD  
D
PD CC  
CC CC  
I
= C  
V
f + I  
.
S
PD CC  
CC  
www.onsemi.com  
5
 
MM74HC125, MM74HC126  
ORDERING INFORMATION  
Part Number  
Package  
Shipping  
MM74HC125M  
SOIC14, Case 751A03  
(PbFree, Halide Free)  
55 Units / Tube  
2500 / Tape & Reel  
96 Units / Tube  
MM74HC125MX  
MM74HC125MTC  
MM74HC125MTCX  
MM74HC126M  
SOIC14, Case 751A03  
(PbFree, Halide Free)  
TSSOP14, Case 948G01  
(PbFree, Halide Free)  
TSSOP14 WB, Case 948G01  
(PbFree, Halide Free)  
2500 / Tape & Reel  
55 Units / Tube  
SOIC14, Case 751A03  
(PbFree, Halide Free)  
MM74HC126MX  
MM74HC126MTCX  
SOIC14, Case 751EF  
(PbFree, Halide Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
TSSOP14 WB, Case 948G01  
(PbFree, Halide Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
NOTE: Device also available in Tape and Reel. Specify by appending suffix letter “X” to the ordering number.  
www.onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14 NB  
CASE 751A03  
ISSUE L  
14  
1
DATE 03 FEB 2016  
SCALE 1:1  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT*  
6.50  
14  
14X  
1.18  
XXXXXXXXXG  
AWLYWW  
1
1
XXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
1.27  
PITCH  
WW  
G
= Work Week  
= PbFree Package  
14X  
0.58  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
SOIC14  
CASE 751A03  
ISSUE L  
DATE 03 FEB 2016  
STYLE 1:  
STYLE 2:  
CANCELLED  
STYLE 3:  
STYLE 4:  
PIN 1. NO CONNECTION  
2. CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. NO CONNECTION  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. NO CONNECTION  
2. ANODE  
3. ANODE  
4. NO CONNECTION  
5. ANODE  
6. NO CONNECTION  
7. ANODE  
8. ANODE  
9. ANODE  
10. NO CONNECTION  
11. ANODE  
12. ANODE  
13. NO CONNECTION  
14. COMMON CATHODE  
3. CATHODE  
4. NO CONNECTION  
5. CATHODE  
6. NO CONNECTION  
7. CATHODE  
8. CATHODE  
9. CATHODE  
10. NO CONNECTION  
11. CATHODE  
12. CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
STYLE 5:  
STYLE 6:  
STYLE 7:  
STYLE 8:  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. COMMON ANODE  
8. COMMON CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
7. CATHODE  
8. ANODE  
PIN 1. ANODE/CATHODE  
2. COMMON ANODE  
3. COMMON CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. COMMON CATHODE  
12. COMMON ANODE  
13. ANODE/CATHODE  
14. ANODE/CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. COMMON ANODE  
8. COMMON ANODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. NO CONNECTION  
12. ANODE/CATHODE  
13. ANODE/CATHODE  
14. COMMON CATHODE  
9. ANODE  
10. ANODE  
11. ANODE  
12. ANODE  
13. ANODE  
14. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14  
CASE 751EF  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13739G  
SOIC14  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSSOP14 WB  
CASE 948G  
ISSUE C  
14  
DATE 17 FEB 2016  
1
SCALE 2:1  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
J1  
K
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
GENERIC  
MARKING DIAGRAM*  
14  
SOLDERING FOOTPRINT  
XXXX  
XXXX  
ALYWG  
G
7.06  
1
1
A
L
= Assembly Location  
= Wafer Lot  
Y
W
G
= Year  
= Work Week  
= PbFree Package  
0.65  
PITCH  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70246A  
TSSOP14 WB  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
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