MMFT960T1G [ONSEMI]
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223; 功率MOSFET 300毫安， 60伏特的N沟道SOT -223
| 型号： | MMFT960T1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc−dc converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
http://onsemi.com
300 mA, 60 VOLTS
RDS(on) = 1.7 W
Features
N−Channel
D
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT−223 Package can be Soldered Using Wave or Reflow
• The Formed Leads Absorb Thermal Stress During Soldering
Eliminating the Possibility of Damage to the Die
• Pb−Free Package is Available
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
4
TO−261AA
CASE 318E
STYLE 3
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Non−Repetitive
Drain Current
Symbol
Value
60
Unit
V
1
V
DS
GS
2
3
V
30
V
I
300
0.8
mAdc
W
D
MARKING DIAGRAM AND
PIN ASSIGNMENT
Total Power Dissipation @ T = 25°C
P
D
A
(Note 1)
Derate above 25°C
6.4
mW/°C
°C
4 Drain
Operating and Storage Temperature Range T , T
−65 to 150
J
stg
AYW
FT960 G
G
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
R
156
260
°C/W
°C
q
JA
1
2
3
Maximum Temperature for Soldering
Purposes
T
L
Gate Drain Source
Time in Solder Bath
10
S
A
Y
W
G
= Assembly Location
= Year
= Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum
recommended footprint.
= Pb−Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
MMFT960T1
MMFT960T1G
Package
Shipping
SOT−223
1000 Tape & Reel
1000 Tape & Reel
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 5
MMFT960T1/D
MMFT960T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
60
−
−
−
−
−
Vdc
mAdc
nAdc
(BR)DSS
(V = 0, I = 10 mA)
GS
D
Zero Gate Voltage Drain Current
(V = 60 V, V = 0)
I
I
10
50
DSS
GSS
DS
GS
Gate−Body Leakage Current
(V = 15 Vdc, V = 0)
−
GS
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
1.0
−
−
−
3.5
1.7
Vdc
W
GS(th)
DS(on)
DS(on)
(V = V , I = 1.0 mAdc)
DS
GS
D
Static Drain−to−Source On−Resistance
(V = 10 Vdc, I = 1.0 A)
R
V
GS
D
Drain−to−Source On−Voltage
(V = 10 V, I = 0.5 A)
Vdc
−
−
−
−
0.8
1.7
GS
D
(V = 10 V, I = 1.0 A)
GS
D
Forward Transconductance
(V = 25 V, I = 0.5 A)
g
−
600
−
mmhos
pF
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
−
−
−
−
−
−
65
33
−
−
−
−
−
−
Output Capacitance
Transfer Capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
C
oss
(V = 25 V, V = 0, f = 1.0 MHz)
DS
GS
C
rss
7.0
3.2
1.2
2.0
Q
nC
g
(V = 10 V, I = 1.0 A, V = 48 V)
Q
GS
D
DS
gs
gd
Q
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
5
1
T = 25°C
J
T = 25°C
J
T = −ꢀ55°C
J
4
3
2
1
0
0.8
0.6
0.4
0.2
0
V
= 10 V
GS
T = 125°C
J
8 V
7 V
6 V
5 V
4 V
V
= 10 V
DS
0
2
4
6
8
10
0
2
4
6
8
10
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
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2
MMFT960T1
TYPICAL ELECTRICAL CHARACTERISTICS
5
4
3
2
1
0
10
V
= 10 V
GS
I = 1 A
D
V
= 10 V
GS
T = 125°C
1
J
25°C
−ꢀ55°C
0.1
0
0
0
0.5
1
1.5
2
2.5
−ꢀ75 −ꢀ50 −ꢀ25
0
25
50
75
100
125 150
I , DRAIN CURRENT (AMPS)
D
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance Variation with Temperature
250
225
200
175
150
125
100
75
V = 0 V
f = 1 MHz
GS
T = 25°C
J
1
T = 125°C
T = 25°C
J
J
0.1
C
iss
C
oss
50
C
25
0
rss
0.3
0.6
0.9
1.2
1.5
0
5
10
V , DRAIN−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
V
, SOURCE−DRAIN DIODE FORWARD VOLTAGE (VOLTS)
SD
Figure 5. Source−Drain Diode Forward Voltage
Figure 6. Capacitance Variation
10
9
8
7
6
5
4
3
2
1
0
2
1.5
1
V
= 10 V
DS
I = 1 A
D
T = 25°C
J
V
= 30 V
DS
V
= 48 V
DS
T = −ꢀ55°C
J
25°C
0.5
0
125°C
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
Q , TOTAL GATE CHARGE (nC)
g
I , DRAIN CURRENT (AMPS)
D
Figure 7. Gate Charge versus Gate−to−Source Voltage
Figure 8. Transconductance
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3
MMFT960T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
H
E
E
1
3
b
e1
e
H
E
C
q
q
A
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.08 (0003)
A1
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MMFT960T1/D
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