MUR2100EG [ONSEMI]
SWITCHMODE Power Rectifier Ultrafast âEâ Series with High Reverse Energy Capability; 开关模式电源整流器超快â ???? EA ????系列高反能能力
| 型号： | MUR2100EG |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifier Ultrafast âEâ Series with High Reverse Energy Capability |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR2100E
Preferred Device
SWITCHMODEt
Power Rectifier
Ultrafast “E” Series with High Reverse
Energy Capability
http://onsemi.com
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
ULTRAFAST RECTIFIER
Features
2.0 AMPERES, 1000 VOLTS
• 20 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
PLASTIC
AXIAL LEAD
CASE 59
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
MARKING DIAGRAM
260°C Max for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
A
MUR2100E
YYWW G
G
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
1000
V
RRM
V
RWM
V
R
A
Y
= Assembly Location
= Year
WW = Work Week
Average Rectified Forward Current (Note 1)
I
2.0 @
T = 35°C
A
A
A
F(AV)
G
= Pb−Free Package
(Note: Microdot may be in either location)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
35
FSM
ORDERING INFORMATION
Operating Junction Temperature and
Storage Temperature Range
T , T
−65 to
+175
°C
J
stg
†
Device
Package
Shipping
THERMAL CHARACTERISTICS
Characteristic
MUR2100E
MUR2100EG
MUR2100ERL
Axial Lead**
Axial Lead**
1000 Units/Bag
1000 Units/Bag
Symbol
Value
Unit
Maximum Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 3)
°C/W
Axial Lead** 5000/Tape & Reel
MUR2100ERLG Axial Lead** 5000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**This package is inherently Pb−Free.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 6
MUR2100E/D
MUR2100E
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
V
V
F
(I = 2.0 A, T = 150°C)
1.75
2.20
F
J
(I = 2.0 A, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2)
i
mA
R
(Rated dc Voltage, T = 100°C)
600
10
J
(Rated dc Voltage, T = 25°C)
J
Maximum Reverse Recovery Time
t
ns
rr
(I = 1.0 A, di/dt = 50 A/ms)
100
75
F
(I = 0.5 A, I = 1.0 A, I = 0.25 A)
F
R
REC
Maximum Forward Recovery Time
(I = 1.0 A, di/dt = 100 A/ms, I
t
75
ns
fr
to 1.0 V)
REC
F
Controlled Avalanche Energy (See Test Circuit in Figure 6)
W
AVAL
10
mJ
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
1.0
0.1
V @ 175°C
F
150°C
100°C
25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V , INSTANTANEOUS VOLTAGE (V)
F
Figure 1. Maximum Forward Voltage
10
V @ 175°C
F
100°C
150°C
1.0
25°C
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
INSTANTANEOUS VOLTAGE (V)
F,
Figure 2. Typical Forward Voltage
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2
MUR2100E
1.0E−01
1.0E−02
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
V
@ 175°C
R
150°C
100°C
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
V
@ 175°C
R
150°C
100°C
25°C
25°C
0
200
400
600
800
1000
0
200
400
600
800
1000
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 4. Typical Reverse Current
Figure 3. Maximum Reverse Current
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4
3
2
1
0
DC
SQUARE WAVE
DC
SQUARE WAVE
0
50
100
150
200
0
0.5
1
1.5
2
2.5
T , AMBIENT TEMPERATURE (°C)
A
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating
Figure 6. Power Dissipation
100
10
1
0
20 40 60 80 100 120 140 160 180 200
V , REVERSE VOLTAGE (V)
R
Figure 7. Typical Capacitance
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3
MUR2100E
NOTE 3. − AMBIENT MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(R ) for the mountings shown is to be used as typical
qJA
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR R
IN STILL AIR
q
JA
Lead Length, L
Mounting
Method
1/8
52
67
1/4
65
80
50
1/2
72
87
Units
°C/W
°C/W
°C/W
1
2
3
R
q
JA
MOUNTING METHOD 1
L
L
MOUNTING METHOD 2
L
L
Vector Pin Mounting
MOUNTING METHOD 3
L = 3/8″
Board Ground Plane
P.C. Board with
1−1/2″ X 1−1/2″ Copper Surface
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4
MUR2100E
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.10
2.00
0.71
−−−
MAX
5.20
2.70
0.86
1.27
−−−
F
A
B
D
F
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
A
K
1.000
−−− 25.40
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
F
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
K
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 81−3−5773−3850
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Order Literature: http://www.onsemi.com/orderlit
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MUR2100E/D
相关型号：
MUR2100ERLG
SWITCHMODE Power Rectifier Ultrafast âEâ Series with High Reverse Energy Capability
ONSEMI
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