NDF10N60Z [ONSEMI]
N-Channel Power MOSFET 0.65 Ω, 600 Volts; N沟道功率MOSFET 0.65 Ω ， 600伏
| 型号： | NDF10N60Z |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 0.65 Ω, 600 Volts |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
0.65 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
• Zener Diode−protected Gate
• 100% Avalanche Tested
• ROHS Compliant
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V
R
DS(ON)
(TYP) @ 5 A
DSS
• This is a Pb−Free Device
Applications
600 V
0.65 Ω
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
N−Channel
• ATX Power Supplies
• Lighting Ballasts
D (2)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol NDF10N60Z NDP10N60Z Unit
G (1)
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
V
600 (Note 1)
10 (Note 2)
5.7 (Note 2)
V
A
A
DSS
I
D
I
D
S (3)
TO−220FP
CASE 221D
STYLE 1
T = 100°C
A
Pulsed Drain Current,
I
36 (Note 2)
A
MARKING
DIAGRAM
DM
V
GS
@ 10 V
Power Dissipation (Note 1)
P
36
125
W
V
D
Gate−to−Source Voltage
V
GS
30
Single Pulse Avalanche
Energy, L = 6.0 mH,
E
300
mJ
AS
NDF10N60ZG
or
NDP10N60ZG
AYWW
I
D
= 10 A
ESD (HBM)
(JESD 22−114−B)
V
esd
3900
V
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T = 25°C) (Figure 13)
A
V
ISO
4500
Gate
Source
TO−220AB
CASE 221A
STYLE 5
Peak Diode Recovery
dv/dt
4.5 (Note 3)
10
V/ns
A
Drain
Continuous Source
I
S
Current (Body Diode)
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
T
300
260
°C
L
T
PKG
Operating Junction and
T , T
−55 to 150
°C
J
stg
Storage Temperature Range
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
Package
TO−220FP
TO−220AB
Shipping
NDF10N60ZG
NDP10N60ZG
50 Units/Rail
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
In Development
2. Limited by maximum junction temperature
3. I ≤ 10 A, di/dt ≤ 200 A/ms, V = 80% BV
S
DD
DSS
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
May, 2009 − Rev. 1
NDF10N60Z/D
NDF10N60Z, NDP10N60Z
THERMAL RESISTANCE
Parameter
Symbol
NDF10N60Z
NDP10N60Z
Unit
Junction−to−Case (Drain)
R
3.4
50
1.0
50
°C/W
q
JC
Junction−to−Ambient Steady State (Note 4)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 1 mA
BV
DSS
600
V
D
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
= 1 mA
DBV
DT
/
0.6
V/°C
DSS
I
D
J
Drain−to−Source Leakage Current
25°C
I
1
mA
DSS
V
DS
= 600 V, V = 0 V
GS
150°C
50
10
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
V
GS
=
20 V
I
mA
GSS
Static Drain−to−Source
On−Resistance
V
= 10 V, I = 5.0 A
R
DS(on)
0.65
7.9
0.75
4.5
W
GS
D
Gate Threshold Voltage
V
DS
= V , I = 250 mA
V
GS(th)
3.0
V
S
GS
D
Forward Transconductance
V
= 15 V, I = 10 A
g
FS
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
1425
150
35
pF
nC
iss
V
DS
= 25 V, V = 0 V,
f = 1.0 MHz
GS
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
47
g
V
DD
= 300 V, I = 10 A,
D
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
Q
Q
9.0
26
gs
gd
V
GS
= 10 V
R
1.5
W
g
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
t
15
31
40
23
ns
d(on)
Rise Time
t
r
V
V
= 300 V, I = 10 A,
D
DD
= 10 V, R = 5 Ω
GS
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
= 10 A, V = 0 V
V
SD
1.6
V
S
GS
t
rr
395
3.0
ns
mC
V
GS
= 0 V, V = 30 V
DD
I
S
= 10 A, di/dt = 100 A/ms
Q
rr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
20
18
20
V
GS
= 15 V
18
16
14
12
10
8
V
DS
= 30 V
T = 25°C
J
10 V
6.6 V
6.4 V
T = 25°C
J
16
14
12
10
8
7.0 V
6.2 V
6.0 V
5.8 V
T = 150°C
J
6
6
5.6 V
5.4 V
4
4
2
0
T = −55°C
J
2
0
5.0 V
0
4
8
12
16
20
24
2
3
4
5
6
7
8
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.80
0.75
0.70
0.80
0.75
0.70
T = 25°C
J
T = 25°C
J
V
GS
= 10 V
I
D
= 5 A
0.65
0.60
0.65
0.60
5
6
7
8
9
10
2.5
5.0
7.5
10
12.5
V , GATE−TO−SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
2.7
10,000
1000
V
GS
= 0 V
V
= 10 V
= 5 A
T = 150°C
J
GS
2.2
1.7
1.2
I
D
100
10
T = 100°C
J
0.7
0.2
−50 −25
0
25
50
75
100
125 150
0
100
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
200
300
400
500
600
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
20
400
300
200
3500
3000
2500
2000
1500
1000
I
= 10 A
D
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
15
10
V
DS
QT
C
iss
Q
Q
gs
gd
V
GS
5
0
100
0
C
rss
500
0
C
oss
0
25
50
75
100
125
150 175 200
0
5
10 15 20 25 30 35 40 45 50 55
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
10
8
V
= 0 V
V
I
= 300 V
= 10 A
= 10 V
GS
DD
T = 25°C
J
D
V
GS
t
d(off)
6
t
r
100
10
t
f
4
t
d(on)
2
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Source Current vs.
Forward Voltage
100
V
= 10 V
GS
100 ms
1 ms
Single Pulse
= 25°C
T
C
10 ms
10
1
10 ms
Mounted on 2″ sq. FR4
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
0.1
R
Limit
DS(on)
dc
Thermal Limit
Package Limit
die operating
0.01
1
10
100
1000
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF10N60Z
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4
NDF10N60Z, NDP10N60Z
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 50%
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse Simulation
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Impedance for NDF10N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
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5
NDF10N60Z, NDP10N60Z
PACKAGE DIMENSIONS
TO−220FP
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
−Y−
G
H
J
0.100 BSC
2.54 BSC
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 1:
PIN 1. GATE
2. DRAIN
M
M
0.25 (0.010)
B
Y
3. SOURCE
TO−220AB
CASE 221A−09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ISSUE AE
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
INCHES
DIM MIN MAX
MILLIMETERS
T
S
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
4
1
A
K
Q
Z
2
3
G
H
J
U
H
K
L
N
Q
R
S
T
L
R
V
U
V
Z
J
G
0.080
2.04
D
STYLE 5:
PIN 1. GATE
2. DRAIN
N
3. SOURCE
4. DRAIN
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NDF10N60Z/D
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