NGB18N40ACLBT4G [ONSEMI]
Ignition IGBT 18 Amps, 400 Volts; 点火IGBT 18安培， 400伏
| 型号： | NGB18N40ACLBT4G |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 18 Amps, 400 Volts |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGB18N40CLB,
NGB18N40ACLB
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
Features
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
G
Stress Applied to Load
R
GE
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
E
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
2
D PAK
CASE 418B
STYLE 4
• Low Saturation Voltage
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (R
)
GE
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices
MARKING DIAGRAM
4
Collector
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
GB
18N40xG
AYWW
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
430
430
18
Unit
V
CES
V
CER
V
DC
V
DC
V
DC
1
Gate
3
V
GE
Emitter
2
Collector
Collector Current−Continuous
I
C
18
50
A
DC
A
AC
@ T = 25°C − Pulsed
C
GB18N40x = Device Code
x
A
Y
WW
G
= B or A
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ESD (Human Body Model)
ESD
ESD
kV
R = 1500 W, C = 100 pF
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
800
V
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
115
0.77
W
W/°C
C
ORDERING INFORMATION
Operating and Storage Temperature Range T , T
−55 to +175
°C
J
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NGB18N40CLBT4G
NGB18N40ACLBT4G
2
D PAK
800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2011 − Rev. 4
NGB18N40CLB/D
NGB18N40CLB, NGB18N40ACLB
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
= 50 V, V = 5.0 V, Pk I = 21.1 A, L = 1.8 mH, Starting T = 25°C
400
300
GE L J
= 50 V, V = 5.0 V, Pk I = 18.3 A, L = 1.8 mH, Starting T = 125°C
GE
L
J
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
AS(R)
mJ
V
CC
2000
GE
L
J
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ T ≤ 150°C)
J
Characteristic
Symbol
Value
750
Unit
ms
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
t
sc1
sc2
t
5.0
ms
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.3
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction−to−Case
R
q
JC
2
Thermal Resistance, Junction−to−Ambient
D PAK (Note 1)
R
50
q
JA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
L
275
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Symbol
Test Conditions
Temperature
Min Typ Max
Unit
Collector−Emitter Clamp Voltage
BV
T = −40°C to 150°C 380 395 420
V
DC
I
= 2.0 mA
= 10 mA
CES
J
C
I
T = −40°C to 150°C 390 405 430
J
C
Zero Gate Voltage Collector Current
I
T = 25°C
−
−
2.0
10
1.0
0.7
12
0.1
33
36
32
13
20
40*
10
mA
DC
CES
ECS
J
V
= 350 V,
GE
CE
T = 150°C
J
V
= 0 V
T = −40°C
J
−
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
I
T = 25°C
J
−
2.0
25*
1.0
37
mA
T = 150°C
J
−
V
= −24 V
CE
T = −40°C
J
−
B
T = 25°C
J
27
30
25
11
V
DC
VCES(R)
T = 150°C
J
40
I
C
= −75 mA
T = −40°C
J
35
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
BV
I
G
= 5.0 mA
T = −40°C to 150°C
15
V
DC
GES
J
I
T = −40°C to 150°C 384 640 100
mA
DC
GES
J
V
= 10 V
GE
0
Gate Emitter Resistor
R
−
T = −40°C to 150°C
J
10
16
26
GE
kW
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
T = 25°C
1.1
1.4
1.9
1.4
2.1*
−
V
GE(th)
J
DC
I
C
V
= 1.0 mA,
T = 150°C
J
0.75 1.0
= V
GE
CE
T = −40°C
J
1.2
1.6
3.4
Threshold Temperature Coefficient
(Negative)
−
−
−
−
mV/°C
*Maximum Value of Characteristic across Temperature Range.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
2
NGB18N40CLB, NGB18N40ACLB
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS (Note 2)
Collector−to−Emitter On−Voltage
Symbol
Test Conditions
Temperature
Min Typ Max
Unit
V
CE(on)
T = 25°C
J
1.0
0.9
1.4
1.3
1.6
1.6
V
DC
I
C
= 6.0 A,
= 4.0 V
T = 150°C
J
V
GE
T = −40°C
1.1 1.45 1.7*
1.3 1.6 1.9*
1.2 1.55 1.8
J
T = 25°C
J
I
= 8.0 A,
GE
C
T = 150°C
J
V
= 4.0 V
T = −40°C
1.4
1.4
1.5
1.4
1.8
2.0
1.7
1.3
1.6
1.9*
J
T = 25°C
J
1.8 2.05
I
= 10 A,
C
T = 150°C
J
1.8
1.8
2.2
2.4
2.1
1.8
2.0
2.1*
2.5
V
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
I
= 15 A,
C
T = 150°C
J
2.6*
2.5
V
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
2.0*
I
= 10 A,
C
T = 150°C
J
1.3 1.75 2.0*
V
= 4.5 V
GE
T = −40°C
1.4
8.0
1.8
14
2.0*
25
J
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
gfs
V
= 5.0 V, I = 6.0 A
T = −40°C to 150°C
Mhos
pF
CE
C
J
C
400 800 100
0
ISS
T = −40°C to 150°C
J
V
= 25 V, V = 0 V
CC
GE
Output Capacitance
Transfer Capacitance
C
C
f = 1.0 MHz
50
75
100
10
OSS
4.0
7.0
RSS
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
V
G
= 300 V, I = 6.5 A
T = 25°C
−
−
−
−
4.0
9.0
0.7
4.5
10
15
mSec
mSec
d(off)
CC
C
J
R
= 1.0 kW, R = 46 W,
L
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
t
f
V
= 300 V, I = 6.5 A
T = 25°C
J
CC
C
R
= 1.0 kW, R = 46 W,
G
G
G
L
t
V
= 10 V, I = 6.5 A
T = 25°C
J
4.0
7.0
d(on)
CC
C
R
= 1.0 kW, R = 1.5 W
L
t
r
V
= 10 V, I = 6.5 A
T = 25°C
J
CC
C
R
= 1.0 kW, R = 1.5 W
L
*Maximum Value of Characteristic across Temperature Range.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
3
NGB18N40CLB, NGB18N40ACLB
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
30
20
10
0
60
V
= 10 V
GE
5 V
V
GE
= 10 V
50
40
30
20
10
0
5 V
4.5 V
4.5 V
4 V
T = −40°C
J
4 V
T = 25°C
J
3.5 V
3.5 V
3 V
3 V
2.5 V
2.5 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
55
50
45
40
35
30
25
20
15
10
60
50
40
30
20
10
0
V
GE
= 10 V
V
= 10 V
CE
T = 150°C
T = −40°C
J
J
5 V
T = 150°C
J
4.5 V
4 V
T = 25°C
J
3.5 V
3 V
2.5 V
5
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3
T = 25°C
J
V
= 5 V
GE
2.5
I
= 25 A
= 20 A
= 15 A
= 10 A
= 5 A
C
I
= 15 A
= 10 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
C
I
C
2
1.5
1
I
C
I
C
I
= 5 A
C
I
C
I
C
0.5
0
−50
−25
0
25
50
75
100
125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
GATE−TO−EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
http://onsemi.com
4
NGB18N40CLB, NGB18N40ACLB
10000
3
2.5
2
T = 150°C
J
C
iss
I
= 15 A
= 10 A
= 5 A
1000
100
10
C
I
C
C
oss
1.5
1
I
C
C
rss
1
0
0.5
0
0
20
40 60 80 100 120 140 160 180 200
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
30
25
20
15
10
2
V
V
R
= 50 V
= 5.0 V
= 1000 W
1.8
1.6
1.4
1.2
CC
V
+ 4 s
TH
GE
V
TH
G
L = 2 mH
V
− 4 s
TH
1
0.8
0.6
0.4
L = 3 mH
L = 6 mH
5
0
0.2
0
−50 −30 −10
10
30 50 70 90 110 130 150
−50 −25
0
25
50
75 100 125 150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
12
10
8
30
25
20
15
10
V
V
R
= 50 V
= 5.0 V
= 1000 W
CC
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
GE
L = 2 mH
L = 3 mH
G
t
f
G
I
C
= 10 A
L = 300 mH
6
L = 6 mH
t
d(off)
4
2
0
5
0
−50 −25
0
25
50
75 100 125 150 175
−50 −30 −10
10
30
50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
http://onsemi.com
5
NGB18N40CLB, NGB18N40ACLB
100
10
1
100
DC
DC
10
100 ms
1 ms
1
100 ms
10 ms
1 ms
10 ms
100 ms
0.1
0.1
100 ms
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Single Pulse Safe Operating Area
Figure 14. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
(Mounted on an Infinite Heatsink at TA = 1255C)
100
10
1
100
10
1
t = 1 ms, D = 0.05
1
t = 1 ms, D = 0.05
1
t = 2 ms, D = 0.10
1
t = 2 ms, D = 0.10
1
t = 3 ms, D = 0.30
1
t = 3 ms, D = 0.30
1
0.1
0.1
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Pulse Train Safe Operating Area
Figure 16. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
V
BATT
= 16 V
V
BATT
= 16 V
R = 0.1 W
L
R = 0.1 W
L
L = 10 mH
L = 10 mH
5.0 V
V
IN
R = 1 kW
G
5.0 V
V
IN
R = 1 kW
G
R
= 55 mW
S
Figure 17. Circuit Configuration for
Short Circuit Test #1
Figure 18. Circuit Configuration for
Short Circuit Test #2
http://onsemi.com
6
NGB18N40CLB, NGB18N40ACLB
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
Single Pulse
READ TIME AT t
1
t
1
0.001
0.0001
t
T
R
− T = P
@ R(t) for t ≤ 0.2 s
R
(t)
JA
2
q
J(pk)
A
(pk)
q
JC
DUTY CYCLE, D = t /t
1
2
0.00001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 19. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
minimum pad area)
http://onsemi.com
7
NGB18N40CLB, NGB18N40ACLB
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
P
STYLE 4:
PIN 1. GATE
U
2. COLLECTOR
3. EMITTER
L
4. COLLECTOR
SOLDERING FOOTPRINT*
M
10.49
8.38
F
VIEW W−W
16.155
3
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NGB18N40CLB/D
相关型号：
©2020 ICPDF网 联系我们和版权申明