NGTB30N135IHR1WG [ONSEMI]
IGBT，1350V，30A，带单片式续流二极管;
| 型号： | NGTB30N135IHR1WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1350V，30A，带单片式续流二极管 局域网 双极性晶体管 功率控制 二极管 |
| 文件： | 总10页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB30N135IHR1WG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
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Features
30 A, 1350 V
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Designed for High System Level Robustness
• These are Pb−Free Devices
VCEsat = 2.4 V
Eoff = 0.63 mJ
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
V
Value
Unit
Collector−emitter voltage @
1350
V
CES
T = 25°C
J
Collector current
@ TC = 25°C
I
A
A
A
C
60
30
G
TO−247
CASE 340AL
@ TC = 100°C
C
E
Pulsed collector current, T
I
120
pulse
CM
limited by T
10 ms pulse,
Jmax
V
GE
= 15 V
MARKING DIAGRAM
Diode forward current
@ TC = 25°C
I
F
60
30
@ TC = 100°C
Diode pulsed current, T
limited
I
120
A
V
pulse
FM
by T
10 ms pulse, V = 0 V
Jmax
GE
30N135IHR1
AYWWG
Gate−emitter voltage
Transient Gate−emitter Voltage
V
$20
GE
25
(T
pulse
= 5 ms, D < 0.10)
Power Dissipation
P
D
W
@ TC = 25°C
@ TC = 100°C
394
197
Operating junction temperature range
Storage temperature range
T
−40 to +175
−55 to +175
260
°C
°C
°C
J
A
Y
WW
G
= Assembly Location
= Year
= Work Week
T
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
NGTB30N135IHR1WG TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 0
NGTB30N135IHR1/D
NGTB30N135IHR1WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.38
40
Unit
°C/W
°C/W
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 5 mA
V
(BR)CES
1350
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
GE
= 15 V, I = 30 A
V
CEsat
−
−
2.4
2.6
3.0
−
C
V
GE
= 15 V, I = 30 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 250 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1350 V
CE J =
I
−
−
−
−
0.5
5.0
mA
GE
CE
CES
V
GE
= 0 V, V = 1350 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V, V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
5530
124
100
220
47
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 600 V, I = 30 A, V = 15 V
ge
gc
C
GE
Q
100
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
t
−
−
−
−
−
−
200
124
0.63
222
221
1.50
−
−
−
−
−
−
ns
d(off)
T = 25°C
J
V
= 600 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
Turn−off delay time
E
off
mJ
ns
GE
t
d(off)
T = 150°C
J
V
CC
= 600 V, I = 30 A
C
Fall time
t
f
R = 10 W
g
V
= 0 V/ 15V
Turn−off switching loss
E
off
mJ
V
GE
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 30 A
V
F
−
−
1.7
2.1
2.2
−
GE
F
V
GE
= 0 V, I = 30 A, T = 175°C
F J
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2
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
120
100
80
120
11 V
T = 25°C
T = 150°C
J
J
11 V
100
80
V
GE
= 20 to 13 V
V
GE
= 20 to 13 V
10 V
9 V
10 V
60
60
40
40
20
0
9 V
8 V
7 V
20
0
8 V
7 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
120
100
80
11 V
V
GE
= 20 to 13 V
T = −55°C
J
10 V
60
60
40
40
9 V
8 V
20
0
20
0
T = 25°C
J
T = 150°C
J
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.25
3.00
2.75
2.50
100000
10000
I
I
= 40 A
C
C
ies
= 30 A
= 20 A
C
1000
I
C
100
10
C
oes
2.25
2.00
C
res
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10
20
30 40 50
60
70
80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
20
18
16
T = 25°C
J
T = 150°C
J
14
12
10
8
6
V
V
= 600 V
= 15 V
CE
4
GE
10
0
2
0
I
C
= 30 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
2.25
2.00
1.75
1.50
1.25
1.00
1000
t
d(off)
E
off
t
f
100
V
V
= 600 V
= 15 V
= 30 A
CE
V
V
I
= 600 V
= 15 V
= 30 A
CE
GE
GE
I
C
0.75
0.50
C
Rg = 10 W
Rg = 10 W
10
0
20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100 120
140 160
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
4
3
2
1000
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
E
off
Rg = 10 W
t
d(off)
t
f
100
V
V
= 600 V
= 15 V
CE
GE
1
0
T = 150°C
J
Rg = 10 W
10
5
20
35
50
65
80
5
20
35
50
65
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
10000
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
t
d(off)
I
C
= 30 A
t
f
E
off
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
J
I
C
= 30 A
0.5
0
10
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
85
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
2.25
2.00
1.75
1.50
1000
t
d(off)
E
off
t
f
100
I
V
= 30 A
C
I
V
= 30 A
C
= 15 V
GE
= 15 V
GE
1.25
1.00
T = 150°C
Rg = 10 W
J
T = 150°C
Rg = 10 W
J
10
350 400 450 500 550 600 650 700 750 800
350 400 450 500 550 600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
1000
100
10
1 ms
100 ms
V
GE
= 15 V, T = 150°C
C
50 ms
dc operation
Single Nonrepetitive
10
1
Pulse T = 25°C
C
1
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
10000
2
20
200
2000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB30N135IHR1WG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
R
= 0.548
q
JC
20%
10%
5%
0.1
R (°C/W)
t (sec)
R
C
R
C
R
n
i
i
Junction
C = t /R
Case
1
1
2
2
2%
0.0537
0.0350
0.0426
0.1183
0.1455
0.0191
0.0019
0.0090
0.0235
0.0267
0.0687
1.6573
0.01
i
i
i
C
n
0.001
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 19. IGBT Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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6
NGTB30N135IHR1WG
Figure 21. Definition of Turn On Waveform
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7
NGTB30N135IHR1WG
Figure 22. Definition of Turn Off Waveform
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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