NGTB45N60S1WG [ONSEMI]
IGBT，600 V/45 A - 焊接;
| 型号： | NGTB45N60S1WG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600 V/45 A - 焊接 双极性晶体管 |
| 文件： | 总6页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB45N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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Features
45 A, 600 V
CEsat = 2.00 V
EOFF = 0.53 mJ
• T
= 175°C
Jmax
V
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
E
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
600
Collector current
@ TC = 25°C
A
90
45
@ TC = 100°C
Diode Forward Current
@ TC = 25°C
I
A
F
90
45
G
TO−247
CASE 340AL
C
@ TC = 100°C
E
Diode Pulsed Current
I
180
180
5
A
A
FM
T
Limited by T Max
PULSE
J
Pulsed collector current, T
I
pulse
CM
limited by T
Jmax
MARKING DIAGRAM
Short−circuit withstand time
= 15 V, V = 400 V,
t
ms
SC
V
GE
CE
T ≤ +150°C
J
VGE
V
V
Gate−emitter voltage
$20
$30
Transient gate−emitter voltage
45N60S1
AYWWG
(T
PULSE
= 5 ms, D < 0.10)
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
300
150
Operating junction temperature
range
T
J
−55 to +175
°C
Storage temperature range
T
−55 to +175
260
°C
°C
stg
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NGTB45N60S1WG
Package
Shipping
30 Units / Rail
TO−247
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 1
NGTB45N60S1W/D
NGTB45N60S1WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.50
1.00
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 45 A
V
CEsat
1.50
−
2.00
2.60
2.40
−
GE
C
V
GE
= 15 V, I = 45 A, T = 175°C
C J
Gate−emitter threshold voltage
V
V
= V , I = 350 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.5
4.0
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T 175°C
CE J =
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
3115
149
88
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
125
32
nC
ns
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 480 V, I = 45 A, V = 15 V
ge
gc
C
GE
Q
65
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
72
33
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
132
68
T = 25°C
d(off)
J
V
= 400 V, I = 45 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
V
= 0 V/ 15 V
E
E
1.25
0.53
1.78
70
mJ
ns
GE
on
off
E
ts
t
t
d(on)
t
r
38
Turn−off delay time
135
88
T = 150°C
d(off)
J
V
= 400 V, I = 45 A
CC
C
Fall time
t
f
R = 10 W
g
Turn−on switching loss
Turn−off switching loss
Total switching loss
V
= 0 V/ 15 V
E
E
1.59
0.88
2.47
mJ
GE
on
off
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 45 A
V
F
1.50
−
2.45
2.62
2.90
−
V
GE
F
V
GE
= 0 V, I = 45 A, T = 175°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
70
272
7
−
−
−
ns
nC
A
rr
T = 25°C
J
Q
I = 45 A, V = 200 V
rr
F
R
di /dt = 200 A/ms
F
I
rrm
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB45N60S1WG
TYPICAL CHARACTERISTICS
140
120
100
80
140
T = 25°C
J
T = 150°C
J
15 V
13 V
120
100
80
60
40
20
0
V
GE
= 20 to 15 V
V
GE
= 20 to 17 V
13 V
60
11 V
10 V
11 V
10 V
40
9 V
8 V
7 V
7 V
20
9 V
8 V
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
10,000
1000
C
ies
T = 25°C
J
T = 150°C
J
C
oes
100
10
C
res
T = 25°C
J
0
0.5
1.0
1.5
2.0
2.5 3.0
3.5 4.0
0
10
20
30 40 50
60
70
80 90 100
V , FORWARD VOLTAGE (V)
F
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Capacitance
Figure 4. Diode Forward Characteristics
20
18
16
14
12
10
8
3.5
3
V
V
= 400 V
= 15 V
CE
GE
T = 150°C
J
Rg = 10 W
2.5
2
E
on
1.5
1
E
off
6
4
V
V
= 480 V
= 15 V
= 35 A
CE
0.5
0
GE
2
I
C
0
40
60
80
0
20
100
120 140
15 20 25 30 35 40 45 50 55 60 65 70 75
I , COLLECTOR CURRENT (A)
C
Q , GATE CHARGE (nC)
G
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
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3
NGTB45N60S1WG
TYPICAL CHARACTERISTICS
1000
1000
V
V
= 400 V
= 15 V
CE
1 ms
GE
100 ms
T = 150°C
Rg = 10 W
J
100
10
1
50 ms
t
t
d(off)
dc operation
t
f
100
d(on)
Single Nonrepetitive
Pulse T = 25°C
C
Curves must be derated
linearly with increase
in temperature
t
r
0.1
10
1
10
100
1000
15 20 25 30 35 40 45 50 55 60 65 70 75
I , COLLECTOR CURRENT (A)
C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
1
50% Duty Cycle
20%
10%
5%
R
= 0.50
q
JC
0.1
R (°C/W)
i
t (sec)
i
R
C
R
R
n
Junction
C = t /R
Case
1
1
2
2
2%
0.0642
0.0608
0.0507
0.1706
0.1422
0.0094
0.0016
0.0052
0.0197
0.0185
0.0703
3.3481
0.01
i
i
i
C
C
n
0.001
Single Pulse
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.0001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 9. IGBT Transient Thermal Impedance
1
R
= 1.0
q
JC
50% Duty Cycle
20%
10%
R (°C/W)
t (sec)
i
i
0.1
0.01
0.015509 0.000064
0.020310 0.000492
0.022591 0.001400
0.050667
0.93366
0.195285
0.133203
0.173839
0.251384
0.039982
R
C
R
C
R
n
Junction
C = t /R
Case
1
1
2
2
0.001974
0.003387
0.005121
0.023740
0.047425
0.125795
2.501137
5%
2%
i
i
i
C
n
Single Pulse
Duty Factor = t /t
1 2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 10. Diode Transient Thermal Impedance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
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