NL17SZ08EDFT2G [ONSEMI]
单 2 输入 NAND 门极;型号: | NL17SZ08EDFT2G |
厂家: | ONSEMI |
描述: | 单 2 输入 NAND 门极 逻辑集成电路 |
文件: | 总6页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NL17SZ08E
Single 2-Input AND Gate
The NL17SZ08E is a single 2−input AND Gate in three tiny
footprint packages. The device performs much as LCX multi−gate
products in speed and drive. They should be used wherever the need
for higher speed and drive are needed.
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Features
• Tiny SOT−353 Package
MARKING
DIAGRAMS
• 2.7 ns T at 5.0 V (typ)
PD
5
• Source/Sink 24 mA at 3.0 V
• Overvoltage Tolerant Inputs
• Chip Complexity: FETs = 20
1
SC−88A
(SC−70−5/SOT−353)
DF SUFFIX
L2 MG
G
• Designed for 1.65 V to 5.5 V V Operation
CC
CASE 419A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
L2 = Specific Device Marking
= Date Code*
= Pb−Free Package
Compliant
M
G
(Note: Microdot may be in either location)
V
CC
IN B
1
*Date Code orientation and/or position may
vary depending upon manufacturing location.
5
IN A
2
PIN ASSIGNMENT
OUT Y
4
GND
3
Pin
Function
1
IN B
2
3
4
5
IN A
GND
Figure 1. Pinout (Top View)
OUT Y
V
CC
IN A
IN B
&
OUT Y
FUNCTION TABLE
Output
Y = AB
Figure 2. Logic Symbol
Input
A
L
B
L
Y
L
L
H
L
L
H
H
L
H
H
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2018 − Rev. 1
NL17SZ08E/D
NL17SZ08E
MAXIMUM RATINGS
Symbol
Parameter
Value
Units
V
DC Supply Voltage
DC Input Voltage
DC Output Voltage
−0.5 to +6.5
−0.5 to +6.5
V
V
V
CC
V
IN
V
OUT
Active Mode, High or LOW State
Power Down Mode (V = 0 V)
−0.5 to V + 0.5
CC
−0.5 to +6.5
CC
I
DC Input Diode Current
−50
mA
mA
mA
mA
°C
IK
I
DC Output Diode Current
DC Output Sink Current
V
OUT
< GND
−50
OK
I
50
OUT
I
DC Supply Current per Supply Pin
Storage Temperature Range
100
CC
T
−65 to +150
260
STG
T
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
°C
L
T
+150
350
°C
J
q
(Note 1)
°C/W
mW
JA
P
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
186
D
MSL
Level 1
F
R
Flammability Rating
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ESD
ESD Classification
Human Body Model (Note 2)
Charged Device Model (Note 3)
4000
1000
V
I
Latchup Performance Above V and Below GND at 125°C (Note 4)
100
mA
LATCHUP
CC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
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2
NL17SZ08E
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
1.65
0
Max
5.5
Units
V
CC
DC Supply Voltage
DC Input Voltage
DC Output Voltage
V
V
V
V
IN
5.5
V
OUT
Active Mode, LOW State
Power−Down Mode (V = 0 V)
0
0
V
CC
5.5
CC
T
Operating Temperature Range
Input Rise and Fall Time
−55
+125
°C
A
t , t
r
V
CC
V
CC
V
CC
= 2.5 V 0.3 V
= 3.0 V 0.3 V
= 5.0 V 0.5 V
0
0
0
20
10
5
ns/V
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Typ
−555C 3 T 3 1255C
A
V
(V)
CC
Min
Max
Min
Max
Symbol
Parameter
Condition
Units
V
IH
High−Level Input Voltage
1.65 to 1.95 0.75 V
0.75 V
0.7 V
V
CC
CC
CC
CC
2.3 to 5.5
0.7 V
V
Low−Level Input Voltage
High−Level Output Voltage
1.65 to 1.95
2.3 to 5.5
0.25 V
0.3 V
0.25 V
0.3 V
V
V
IL
CC
CC
CC
CC
V
OH
I
I
= −100 mA
= −4 mA
= −8 mA
1.65 to 5.5
1.65
2.3
V
CC
− 0.1
V
V
CC
− 0.1
OH
CC
1.29
1.52
2.1
2.4
2.7
2.5
4.0
1.29
OH
V
IN
= V or V
IL IH
I
1.9
2.2
2.4
2.3
3.8
1.9
2.2
2.4
2.3
3.8
OH
I
= −12 mA
= −16 mA
= −24 mA
= −32 mA
2.7
OH
I
3.0
OH
I
3.0
OH
I
4.5
OH
V
OL
Low−Level Output Voltage
= V or V
I
= 100 mA
= 4 mA
1.65 to 5.5
1.65
2.3
0.1
0.24
0.3
0.1
0.24
0.3
V
OL
I
OL
0.08
0.20
0.22
0.28
0.38
0.42
V
IN
IH
OH
I
OL
= 8 mA
I
OL
= 12 mA
= 16 mA
= 24 mA
= 32 mA
2.7
0.4
0.4
I
OL
3.0
0.4
0.4
I
OL
3.0
0.55
0.55
0.55
0.55
I
OL
4.5
I
Input Leakage Current
V
GND
= 5.5 V or
1.65 to 5.5
0.1
1.0
mA
mA
mA
IN
IN
I
Quiescent Supply Current
Power Off Leakage Current
V
IN
= 5.5 V or
5.5
0
1
10
CC
GND
I
V
V
= 5.5 V or
= 5.5 V
1
10
OFF
IN
OUT
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NL17SZ08E
AC ELECTRICAL CHARACTERISTICS t = t = 3.0 ns
R
F
T
A
= 255C
Typ
6.3
−555C 3 T 3 1255C
A
V
CC
Min
Max
12
Min
Max
12.7
10.5
7.5
(V)
1.65
Symbol
Parameter
Condition
Units
t
Propagation Delay
(Figure 3 and 4)
ns
R = 1 MW, C = 15 pF
PLH
L
L
t
PHL
R = 1 MW, C = 15 pF
1.8
6.2
10
L
L
R = 1 MW, C = 15 pF
2.5 0.2
3.3 0.3
3.4
7.0
4.7
5.2
4.1
4.5
L
L
R = 1 MW, C = 15 pF
2.6
5.0
L
L
R = 500 W, C = 50 pF
3.3
5.5
L
L
5.0 0.5
2.2
4.4
R = 1 MW, C = 15 pF
L
L
R = 500 W, C = 50 pF
2.7
4.8
L
L
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
= 5.5 V, V = 0 V or V
Typical
u4.0
25
Units
pF
C
Input Capacitance
V
CC
IN
I
CC
C
Power Dissipation Capacitance
(Note 5)
10 MHz, V = 3.3 V, V = 0 V or V
pF
PD
CC
I
CC
10 MHz, V = 5.5 V, V = 0 V or V
30
CC
I
CC
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
power consumption; P = C ꢀ V
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
t = 3 ns
f
t = 3 ns
f
V
CC
V
CC
90%
50%
90%
50%
INPUT
A and B
10%
10%
OUTPUT
GND
INPUT
R
C
L
L
t
t
PHL
PLH
A 1−MHz square input wave is recommended for
propagation delay tests.
50%
50%
V
V
OH
OUTPUT Y
OL
Figure 3. Switching Waveform
Figure 4. Test Circuit
DEVICE ORDERING INFORMATION
Device Order Number
†
Package Type
Tape and Reel Size
NL17SZ08EDFT2G
SC−88A/SC−70−5/SOT−353
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE M
SCALE 2:1
DATE 11 APR 2023
GENERIC MARKING
DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXMG
G
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
STYLE 1:
STYLE 2:
STYLE 3:
PIN 1. ANODE 1
2. N/C
STYLE 4:
STYLE 5:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. BASE
PIN 1. SOURCE 1
2. DRAIN 1/2
3. SOURCE 1
4. GATE 1
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
2. EMITTER
3. BASE
4. COLLECTOR
5. COLLECTOR
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
4. COLLECTOR
5. CATHODE
4. CATHODE 3
5. CATHODE 4
5. GATE 2
STYLE 9:
STYLE 6:
PIN 1. EMITTER 2
2. BASE 2
STYLE 7:
STYLE 8:
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
PIN 1. ANODE
2. CATHODE
3. ANODE
4. ANODE
5. ANODE
PIN 1. BASE
2. EMITTER
3. BASE
PIN 1. CATHODE
2. COLLECTOR
3. N/C
3. EMITTER 1
4. COLLECTOR
5. COLLECTOR 2/BASE 1
4. COLLECTOR
5. COLLECTOR
4. BASE
5. EMITTER
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42984B
SC−88A (SC−70−5/SOT−353)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2018
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