NRVB830MFST1G [ONSEMI]
SWITCHMODE Power Rectifiers;
| 型号： | NRVB830MFST1G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
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• New Package Provides Capability of Inspection and Probe After
Board Mounting
SCHOTTKY BARRIER
RECTIFIERS
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
8 AMPERES
30 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free and Halide−Free Devices
MARKING
DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
A
C
C
1
A
A
B830
AYWZZ
• Lead Finish: 100% Matte Sn (Tin)
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Lead and Mounting Surface Temperature for Soldering Purposes:
Not Used
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
B830
A
Y
= Specific Device Code
= Assembly Location
= Year
MAXIMUM RATINGS
W
= Work Week
Rating
Symbol
Value
Unit
ZZ
= Lot Traceability
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
30
R
ORDERING INFORMATION
Average Rectified Forward Current
I
8.0
A
A
F(AV)
(Rated V , T = 143°C)
R
C
Device
Package
Shipping†
Peak Repetitive Forward Current,
I
16
FRM
MBR830MFST1G
SO−8 FL
1500 /
(Rated V , Square Wave,
R
(Pb−Free)
Tape & Reel
20 kHz, T = 143°C)
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
MBR830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
FSM
NRVB830MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Storage Temperature Range
T
−65 to +150
−40 to +150
100
°C
°C
mJ
stg
NRVB830MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Operating Junction Temperature
T
J
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
MBR830MFS/D
MBR830MFS, NRVB830MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.0
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 8 Amps, T = 125°C)
0.44
0.50
0.57
0.70
F
J
(i = 8 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
15
0.020
50
0.200
J
(Rated dc Voltage, T = 25°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
10
1
100
10
150°C
150°C
125°C
1.0
125°C
−40°C
25°C
0.2 0.3
25°C
−40°C
0.1
0.1
0.0
0.1
0.4
0.5
0.6
0.7
0.8
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
1.E−08
1.E−09
1.E−09
1.E−10
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
MBR830MFS, NRVB830MFS
TYPICAL CHARACTERISTICS
10000
1000
100
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
R
= 2.0°C/W
T = 25°C
q
JC
J
dc
Square Wave
10
0
5
10
15
20
25
30
60
80
100
120
140
160
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
8
I /I = 20
PK AV
T = 150°C
J
7
6
5
4
3
2
I /I = 10
PK AV
I
/I = 5
PK AV
Square Wave
1
0
dc
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Response
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3
MBR830MFS, NRVB830MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
3. ANODE
4. NO CONNECT
5. CATHODE
DETAIL A
SOLDERING FOOTPRINT*
3X
4X
b
8X
1.270
0.750
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
E2
2X
0.495
PIN 5
(EXPOSED PAD)
M
4.530
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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MBR830MFS/D
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