NSBC114YPDP6T5G [ONSEMI]
Complementary Bias Resistor Transistors; 互补偏置电阻晶体管型号: | NSBC114YPDP6T5G |
厂家: | ONSEMI |
描述: | Complementary Bias Resistor Transistors |
文件: | 总10页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUN5314DW1,
NSBC114YPDXV6,
NSBC114YPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 47 kW
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PIN CONNECTIONS
(2)
NPN and PNP Transistors with Monolithic
Bias Resistor Network
(3)
(1)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
R
1
R
2
Q
1
Q
2
R
2
R
1
Features
(4)
(5)
(6)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
MARKING DIAGRAMS
6
SOT−363
CASE 419B
14 M G
G
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
1
Compliant
MAXIMUM RATINGS
A
SOT−563
CASE 463A
1
14 M G
(T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)
1
2
G
Rating
Symbol
Max
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
V
CBO
V
CEO
50
Vdc
Collector Current − Continuous
Input Forward Voltage
I
100
40
mAdc
Vdc
SOT−963
CASE 527AD
M G
C
G
V
IN(fwd)
1
Input Reverse Voltage
V
6
Vdc
IN(rev)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
14/Q
M
G
=
=
=
Specific Device Code
Date Code*
Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*Date Code orientation may vary depending
upon manufacturing location.
†
Device
Package
Shipping
MUN5314DW1T1G,
SMUN5314DW1T1G
SOT−363
3,000/Tape & Reel
NSBC114YPDXV6T1G
NSBC114YPDXV6T5G
NSBC114YPDP6T5G
SOT−563
SOT−563
SOT−963
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012 − Rev. 0
DTC114YP/D
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MUN5314DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
P
D
T = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
187
256
1.5
2.0
mW
A
Derate above 25C
mW/C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
670
490
C/W
q
JA
MUN5314DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
D
T = 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
250
385
2.0
3.0
mW
A
Derate above 25C
mW/C
Thermal Resistance,
Junction to Ambient
R
C/W
C/W
C
q
JA
(Note 1)
(Note 2)
493
325
Thermal Resistance,
Junction to Lead
R
q
JL
(Note 1)
(Note 2)
188
208
Junction and Storage Temperature Range
NSBC114YPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25C
(Note 1)
(Note 1)
357
2.9
mW
mW/C
A
Derate above 25C
Thermal Resistance,
Junction to Ambient
R
C/W
q
JA
D
(Note 1)
350
NSBC114YPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
T = 25C
(Note 1)
(Note 1)
500
4.0
mW
mW/C
A
Derate above 25C
Thermal Resistance,
Junction to Ambient
R
C/W
C
q
JA
(Note 1)
250
Junction and Storage Temperature Range
NSBC114YPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25C
A
(Note 4)
(Note 5)
(Note 4)
(Note 5)
231
269
1.9
2.2
MW
Derate above 25C
mW/C
Thermal Resistance,
Junction to Ambient
R
C/W
q
JA
(Note 4)
(Note 5)
540
464
NSBC114YPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
D
T = 25C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
339
408
2.7
3.3
MW
A
Derate above 25C
mW/C
Thermal Resistance,
Junction to Ambient
R
C/W
C
q
JA
(Note 4)
(Note 5)
369
306
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
2
2
4. FR−4 @ 100 mm , 1 oz. copper traces, still air.
5. FR−4 @ 500 mm , 1 oz. copper traces, still air.
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2
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
ELECTRICAL CHARACTERISTICS (T = 25C both polarities Q (PNP) & Q (NPN), unless otherwise noted)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.2
−
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector-Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector-Emitter Breakdown Voltage (Note 6)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 6)
h
FE
(I = 5.0 mA, V = 10 V)
80
140
−
C
CE
Collector-Emitter Saturation Voltage (Note 6)
(I = 10 mA, I = 0.3 mA)
V
V
CE(sat)
−
−
0.25
C
B
Input Voltage (Off)
(V = 5.0 V, I = 100 mA) (NPN)
V
Vdc
i(off)
i(on)
−
−
0.7
0.7
−
−
CE
C
(V = 5.0 V, I = 100 mA) (PNP)
CE
C
Input Voltage (On)
(V = 0.2 V, I = 1.0 mA) (NPN)
V
Vdc
−
−
0.8
0.9
−
−
CE
C
(V = 0.2 V, I = 1.0 mA) (PNP)
CE
C
Output Voltage (On)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
Vdc
Vdc
kW
OL
−
−
0.2
CC
B
L
Output Voltage (Off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
7.0
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
10
13
0.17
0.21
0.25
1
2
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
400
350
300
250
(1) SOT−363; 1.0 1.0 Inch Pad
200
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm , 1 oz. Copper Trace
(1) (2) (3)
2
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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3
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
1
1000
I /I = 10
C
B
V
CE
= 10 V
150C
25C
100
25C
−55C
0.1
150C
10
1
−55C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2
100
10
f = 10 kHz
= 0 A
T = 25C
A
I
E
−55C
1
25C
1.6
1.2
0.8
0.4
0
150C
0.1
0.01
V
= 5 V
9
O
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
10
−55C
25C
1
150C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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4
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
1
1000
I /I = 10
C
B
V
CE
= 10 V
150C
−55C
25C
25C
100
150C
0.1
10
1
−55C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
10
9
8
7
6
5
4
3
2
1
0
100
10
f = 10 kHz
= 0 A
T = 25C
A
−55C
I
E
1
25C
0.1
150C
0.01
V
O
= 5 V
6
0.001
0
10
20
30
40
50
0
1
2
3
4
5
7
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25C
−55C
1
150C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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5
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114YPDP6
1
1000
I /I = 10
C
B
V
CE
= 10 V
150C
25C
25C
100
−55C
0.1
150C
10
1
−55C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
2.4
2
100
10
f = 10 kHz
= 0 A
T = 25C
A
I
E
−55C
1.6
1.2
0.8
0.4
0
1
25C
0.1
0.01
150C
V
O
= 5 V
6
0.001
0
10
20
30
40
50
0
1
2
3
4
5
7
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 14. Output Capacitance
Figure 15. Output Current vs. Input Voltage
100
10
25C
−55C
1
150C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage vs. Output Current
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6
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC114YPDP6
1
1000
I /I = 10
C
B
V
CE
= 10 V
150C
−55C
25C
25C
100
150C
0.1
10
1
−55C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
7
6
5
4
3
2
1
0
100
10
f = 10 kHz
= 0 A
T = 25C
A
I
E
−55C
1
25C
0.1
0.01
150C
V
= 5 V
O
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
12 11 10 11
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 19. Output Capacitance
Figure 20. Output Current vs. Input Voltage
100
10
25C
−55C
1
150C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage vs. Output Current
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7
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
e
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
6
1
5
2
4
3
A
0.95
0.05
A1 0.00
H
−E−
E
A3
0.20 REF
0.21
0.14
2.00
1.25
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
0.65 BSC
b 6 PL
L
0.10
2.00
0.20
2.10
H
E
M
M
E
0.2 (0.008)
A3
C
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
SC−88/SC70−6/SOT−363
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
−X−
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
NOTES:
D
X
Y
1. DIMENSIONING AND TOLERANCING PER ASME
A
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
6
5
4
3
H
E
E
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
HE
0.95
0.05
1.05
0.15
L
L2
6X
b
6X
L2
0.08
X Y
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC114YP/D
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