NSR05402NXT5G [ONSEMI]
500 mA,40 V,肖特基势垒二极管,DSN2 (0201);型号: | NSR05402NXT5G |
厂家: | ONSEMI |
描述: | 500 mA,40 V,肖特基势垒二极管,DSN2 (0201) 功效 测试 二极管 |
文件: | 总5页 (文件大小:328K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NSR05402
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
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40 V SCHOTTKY
BARRIER DIODE
Features
• Low Forward Voltage Drop − 570 mV (Typ.) @ I = 500 mA
F
• Low Reverse Current − 3.0 mA (Typ.) @ V = 40 V
R
1
2
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
CATHODE
ANODE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
PIN 1
Typical Applications
DSN2
(0201)
CASE 152AA
PM
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping and Protection
P
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
MAXIMUM RATINGS
Device
NSR05402NXT5G
Package
Shipping†
5000 / Tape & Reel
Rating
Symbol
Value
40
Unit
V
DSN2
(Pb−Free)
Reverse Voltage
V
R
Forward Current (DC)
I
F
500
mA
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
8.0
1.8
Repetitive Peak Forward Current
I
A
FRM
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating:
Human Body Model
Machine Model
ESD
>8.0
>400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 0
NSR05402/D
NSR05402
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
329
380
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Thermal Resistance
Junction−to−Ambient (Note 2)
R
140
895
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Storage Temperature Range
Junction Temperature
T
−40 to +125
°C
°C
stg
T
+150
J
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Figure 1. Thermal Response (Note 1)
Figure 2. Thermal Response (Note 2)
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2
NSR05402
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 10 V)
0.3
3.0
4.0
20
R
(V = 40 V)
R
Forward Voltage
V
F
mV
(I = 0.1 mA)
180
230
310
400
450
570
220
255
350
440
480
620
F
(I = 1 mA)
F
(I = 10 mA)
F
(I = 100 mA)
F
(I = 200 mA)
F
(I = 500 mA)
F
Total Capacitance
C
9.5
pF
ns
T
(V = 5.0 V, f = 1.0 MHz)
R
Reverse Recovery Time
5.9
trr
(I = I = 10 mA, I = 1.0 mA), Figure 3
F
R
R(REC)
Peak Forward Recovery Voltage
(V = 1.0 V, f = 1.0 MHz), Figure 4
V
FRM
558
mV
R
Figure 3. Recovery Time Equivalent Test Circuit
Figure 4. Peak Forward Recover Voltage Definition
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DSN2, 0.6x0.3, 0.4P, (0201)
CASE 152AA
ISSUE B
DATE 30 APR 2017
SCALE 8:1
NOTES:
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
0.24
A1 0.00
MAX
0.30
0.01
0.22
E
A
2X
0.06
C
b
D
E
e
0.20
0.30 BSC
0.60 BSC
0.40 BSC
2X
0.06
C
TOP VIEW
L
0.10
0.12
GENERIC
MARKING DIAGRAM1*
GENERIC
MARKING DIAGRAM2*
0.05
0.05
C
C
A
e
PIN 1
PIN 1
2X
A1
SEATING
PLANE
XXXX
YYY
C
XM
SIDE VIEW
XXXX = Specific Device Code
YYY = Year Code
X
M
= Specific Device Code
= Date Code
1
2
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present. Some products may
not follow the Generic Marking.
2X L
2X b
0.05
C A B
BOTTOM VIEW
CATHODE BAND MONTH CODING
NOV OCT
MOUNTING FOOTPRINT*
DEC
0.28
SEP
JUN
DEVICE CODE
YEAR CODE
XXXX
YYY
0.75
MAR
FEB
JAN
0.30
0.28
XXXX
Y09
DIMENSIONS: MILLIMETERS
(EXAMPLE)
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
INDICATES AUG 2009
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39897E
DSN2, 0.6X0.3, 0.4P, (0201)
PAGE 1 OF 1
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