NSR05402NXT5G [ONSEMI]

500 mA,40 V,肖特基势垒二极管,DSN2 (0201);
NSR05402NXT5G
型号: NSR05402NXT5G
厂家: ONSEMI    ONSEMI
描述:

500 mA,40 V,肖特基势垒二极管,DSN2 (0201)

功效 测试 二极管
文件: 总5页 (文件大小:328K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NSR05402  
500 mA, 40 V Schottky  
Barrier Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current and are offered in a Chip Scale  
Package (CSP) to reduce board space. The low thermal resistance  
enables designers to meet the challenging task of achieving higher  
efficiency and meeting reduced space requirements.  
www.onsemi.com  
40 V SCHOTTKY  
BARRIER DIODE  
Features  
Low Forward Voltage Drop 570 mV (Typ.) @ I = 500 mA  
F
Low Reverse Current 3.0 mA (Typ.) @ V = 40 V  
R
1
2
ESD Rating Human Body Model: Class 3B  
ESD Rating Machine Model: Class C  
High Switching Speed  
CATHODE  
ANODE  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
PIN 1  
Typical Applications  
DSN2  
(0201)  
CASE 152AA  
PM  
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping and Protection  
P
M
= Specific Device Code  
= Date Code  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
NSR05402NXT5G  
Package  
Shipping†  
5000 / Tape & Reel  
Rating  
Symbol  
Value  
40  
Unit  
V
DSN2  
(PbFree)  
Reverse Voltage  
V
R
Forward Current (DC)  
I
F
500  
mA  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Surge Current  
(60 Hz @ 1 cycle)  
I
FSM  
8.0  
1.8  
Repetitive Peak Forward Current  
I
A
FRM  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
>8.0  
>400  
kV  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2019 Rev. 0  
NSR05402/D  
NSR05402  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Thermal Resistance  
JunctiontoAmbient (Note 1)  
R
329  
380  
°C/W  
mW  
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Thermal Resistance  
JunctiontoAmbient (Note 2)  
R
140  
895  
°C/W  
mW  
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
Storage Temperature Range  
Junction Temperature  
T
40 to +125  
°C  
°C  
stg  
T
+150  
J
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.  
Figure 1. Thermal Response (Note 1)  
Figure 2. Thermal Response (Note 2)  
www.onsemi.com  
2
 
NSR05402  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Leakage  
I
R
mA  
(V = 10 V)  
0.3  
3.0  
4.0  
20  
R
(V = 40 V)  
R
Forward Voltage  
V
F
mV  
(I = 0.1 mA)  
180  
230  
310  
400  
450  
570  
220  
255  
350  
440  
480  
620  
F
(I = 1 mA)  
F
(I = 10 mA)  
F
(I = 100 mA)  
F
(I = 200 mA)  
F
(I = 500 mA)  
F
Total Capacitance  
C
9.5  
pF  
ns  
T
(V = 5.0 V, f = 1.0 MHz)  
R
Reverse Recovery Time  
5.9  
trr  
(I = I = 10 mA, I = 1.0 mA), Figure 3  
F
R
R(REC)  
Peak Forward Recovery Voltage  
(V = 1.0 V, f = 1.0 MHz), Figure 4  
V
FRM  
558  
mV  
R
Figure 3. Recovery Time Equivalent Test Circuit  
Figure 4. Peak Forward Recover Voltage Definition  
www.onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DSN2, 0.6x0.3, 0.4P, (0201)  
CASE 152AA  
ISSUE B  
DATE 30 APR 2017  
SCALE 8:1  
NOTES:  
A
B
D
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
MILLIMETERS  
DIM MIN  
0.24  
A1 0.00  
MAX  
0.30  
0.01  
0.22  
E
A
2X  
0.06  
C
b
D
E
e
0.20  
0.30 BSC  
0.60 BSC  
0.40 BSC  
2X  
0.06  
C
TOP VIEW  
L
0.10  
0.12  
GENERIC  
MARKING DIAGRAM1*  
GENERIC  
MARKING DIAGRAM2*  
0.05  
0.05  
C
C
A
e
PIN 1  
PIN 1  
2X  
A1  
SEATING  
PLANE  
XXXX  
YYY  
C
XM  
SIDE VIEW  
XXXX = Specific Device Code  
YYY = Year Code  
X
M
= Specific Device Code  
= Date Code  
1
2
*This information is generic. Please refer  
to device data sheet for actual part  
marking. PbFree indicator, “G”, may  
or not be present. Some products may  
not follow the Generic Marking.  
2X L  
2X b  
0.05  
C A B  
BOTTOM VIEW  
CATHODE BAND MONTH CODING  
NOV OCT  
MOUNTING FOOTPRINT*  
DEC  
0.28  
SEP  
JUN  
DEVICE CODE  
YEAR CODE  
XXXX  
YYY  
0.75  
MAR  
FEB  
JAN  
0.30  
0.28  
XXXX  
Y09  
DIMENSIONS: MILLIMETERS  
(EXAMPLE)  
See Application Note AND8398/D for more mounting details  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
INDICATES AUG 2009  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON39897E  
DSN2, 0.6X0.3, 0.4P, (0201)  
PAGE 1 OF 1  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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© Semiconductor Components Industries, LLC, 2019  
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