NSS12201LT1G [ONSEMI]
12 V, 4.0 A, Low VCE(sat) NPN Transistor; 12 V ， 4.0 A，低VCE （ sat）的NPN晶体管
| 型号： | NSS12201LT1G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 4.0 A, Low VCE(sat) NPN Transistor |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12201LT1G
12 V, 4.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
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Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
12 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 35 mW
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
MAXIMUM RATINGS (T = 25°C)
A
EMITTER
Rating
Symbol
Max
12
Unit
Vdc
Vdc
Vdc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
3
12
V
EBO
6.0
2.0
4.0
1
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
2
SOT−23 (TO−236)
CASE 318
I
A
CM
ESD
HBM Class 3B
MM Class C
STYLE 6
MAXIMUM RATINGS (T = 25°C)
A
MARKING DIAGRAM
Rating
Symbol
Symbol
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
VF M G
G
Max
Unit
1
Total Device Dissipation
P
(Note 1)
460
mW
D
T = 25°C
A
Derate above 25°C
3.7
mW/°C
°C/W
VF = Specific Device Code
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
R
q
(Note 1)
270
JA
Junction−to−Ambient
Total Device Dissipation
P
D
(Note 2)
(Note 2)
540
mW
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T = 25°C
A
Derate above 25°C
4.3
mW/°C
°C/W
Thermal Resistance,
R
q
230
JA
Junction−to−Ambient
ORDERING INFORMATION
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NSS12201LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. FR−4 @ 100 mm , 1 oz. copper traces.
2
2. FR−4 @ 500 mm , 1 oz. copper traces.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 5
NSS12201L/D
NSS12201LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
12
12
6.0
−
−
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
(V = 12 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
(V = 6.0 Vdc)
EB
I
EBO
−
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 10 mA, V = 2.0 V)
200
200
200
200
−
330
−
−
−
−
−
C
CE
(I = 500 mA, V = 2.0 V)
C
CE
(I = 1.0 A, V = 2.0 V)
C
CE
(I = 2.0 A, V = 2.0 V)
−
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 0.1 A, I = 0.01 A)
V
V
CE(sat)
−
−
−
−
0.003
0.035
0.053
0.068
0.008
0.050
0.080
0.090
C
B
(I = 1.0 A, I = 0.100 A)
C
B
(I = 1.0 A, I = 0.010 A)
C
B
(I = 2.0 A, I = 0.2 A)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 1.0 A, I = 10 mA)
V
V
V
BE(sat)
−
−
0.760
0.750
0.900
0.900
C
B
Base−Emitter Turn−on Voltage (Note 3)
(I = 1.0 A, V = 2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = 100 mA, V = 5.0 V, f = 100 MHz)
f
MHz
T
150
−
−
−
−
−
C
CE
Input Capacitance (V = 0.5 V, f = 1.0 MHz)
Cibo
450
75
pF
pF
EB
Output Capacitance (V = 3.0 V, f = 1.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V = 10 V, I = 750 mA, I = 15 mA)
t
−
−
−
−
−
−
−
−
100
100
350
110
ns
ns
ns
ns
CC
C
B1
d
Rise (V = 10 V, I = 750 mA, I = 15 mA)
t
CC
C
B1
r
Storage (V = 10 V, I = 750 mA, I = 15 mA)
t
CC
C
B1
s
Fall (V = 10 V, I = 750 mA, I = 15 mA)
t
f
CC
C
B1
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS12201LT1G
TYPICAL CHARACTERISTICS
0.2
0.15
0.1
0.25
I /I = 100
C
B
I /I = 10
150°C
C
B
150°C
0.2
0.15
0.1
25°C
25°C
−55°C
0.05
0
−55°C
0.05
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
575
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I /I = 10
150°C (5.0 V)
150°C (2.0 V)
C
B
525
475
425
375
325
275
225
−55°C
25°C
25°C (5.0 V)
25°C (2.0 V)
150°C
−55°C (5.0 V)
−55°C (2.0 V)
0.4
0.3
175
125
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
1.0
0.8
0.6
0.4
I
C
= 500 mA
10 mA
V
= 2.0 V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
CE
−55°C
25°C
100 mA
300 mA
150°C
0.2
0
0.2
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 6. Saturation Region
Collector Current
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3
NSS12201LT1G
TYPICAL CHARACTERISTICS
425
400
90
C
ibo(pF)
C
obo(pF)
80
70
60
375
350
325
300
275
250
225
50
40
200
175
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
V , EMITTER BASE VOLTAGE (V)
EB
V , COLLECTOR BASE VOLTAGE (V)
CB
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
100 ms 10 ms
1 s
1 ms
1
Thermal Limit
0.1
Single Pulse Test
at T = 25°C
amb
0.01
0.01
0.1
1
10
100
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 9. Safe Operating Area
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4
NSS12201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
D
SEE VIEW C
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
c
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
1
2
b
0.25
e
q
A
H
E
L
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSS12201L/D
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