NST3906F3T5G [ONSEMI]
PNP General Purpose Transistor; PNP通用晶体管
| 型号： | NST3906F3T5G |
| 厂家： | 
ONSEMI |
| 描述： | PNP General Purpose Transistor |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST3906F3T5G
PNP General Purpose
Transistor
The NST3906F3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
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COLLECTOR
3
Features
• h , 100−300
FE
1
• Low V
, ≤ 0.4 V
CE(sat)
BASE
• Reduces Board Space
• This is a Pb−Free Device
2
EMITTER
NST3906F3T5G
MAXIMUM RATINGS
Rating
Symbol
Value
−40
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
V
CEO
V
CBO
V
EBO
3
−40
Vdc
2
1
−5.0
−200
Vdc
I
C
mAdc
SOT−1123
CASE 524AA
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T = 25°C
Derate above 25°C
P
290
2.3
mW
mW/°C
A
D
MARKING DIAGRAM
(Note 1)
Thermal Resistance,
Junction−to−Ambient
R
432
°C/W
q
JA
3 M
(Note 1)
Total Device Dissipation, T = 25°C
Derate above 25°C
P
347
2.8
mW
mW/°C
A
D
3
M
= Device Code
= Date Code
(Note 2)
Thermal Resistance,
Junction−to−Ambient
R
360
°C/W
°C/W
°C
q
JA
(Note 2)
Thermal Resistance,
Junction−to−Lead 3
R
143
Y
JL
ORDERING INFORMATION
(Note 2)
†
Device
NST3906F3T5G
Package
Shipping
Junction and Storage Temperature Range T , T
−55 to
+150
J
stg
SOT−1123 8000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
2
1. 100 mm 1 oz, copper traces.
2. 500 mm 1 oz, copper traces.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
April, 2008 − Rev. 0
NST3906F3/D
NST3906F3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0)
V
−40
−40
−5.0
−
−
−
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
−
Vdc
E
C
Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)
I
CEX
−50
nAdc
CE
ON CHARACTERISTICS (Note 3)
DC Current Gain
BE
h
FE
−
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
f
T
250
−
−
MHz
pF
C
CE
Output Capacitance (V = −5.0 V, I = 0 mA, f = 1.0 MHz)
C
obo
4.5
10.0
4.0
CB
E
Input Capacitance (V = −0.5 V, I = 0 mA, f = 1.0 MHz)
C
−
pF
EB
E
ibo
Noise Figure
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 kW, f = 1.0 kHz)
NF
−
dB
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V = −3.0 Vdc, V = 0.5 Vdc)
t
t
−
−
−
−
35
35
CC
BE
d
ns
ns
(I = −10 mAdc, I = −1.0 mAdc)
t
r
C
B1
(V = −3.0 Vdc, I = −10 mAdc)
250
50
CC
C
s
(I = I = −1.0 mAdc)
t
f
B1
B2
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
0.40
350
300
250
200
150
100
150°C (5.0 V)
150°C (1.0 V)
I /I = 10
C
B
0.35
0.30
0.25
0.20
0.15
0.10
V
= 150°C
CE(sat)
25°C (5.0 V)
25°C
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
−55°C
50
0
0.05
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
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2
NST3906F3T5G
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.1
V
= 2.0 V
I /I = 10
CE
C
B
1.0
0.9
0.8
0.7
0.6
0.5
−55°C
25°C
−55°C
25°C
150°C
150°C
0.4
0.3
0.4
0.3
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
9.0
8.0
100 mA
80 mA
7.0
6.0
5.0
60 mA
40 mA
C
ib
20 mA
4.0
3.0
0.1
0
I
= 10 mA
C
0.0001
0.001
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, EMITTER BASE VOLTAGE (V)
I , BASE CURRENT (A)
V
eb
b
Figure 5. Saturation Region
Figure 6. Input Capacitance
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
C
ob
1.5
1.0
0
5.0
10
15
20
25
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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3
NST3906F3T5G
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA−01
ISSUE A
NOTES:
−X−
D
b1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
1
2
3
E
b
e
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
0.08 (0.0032)
X Y
MIN
A
b
0.34
0.15
0.37
0.20
0.15
0.12
0.80
0.60
0.35
1.00
0.10
0.40
0.25
0.20
0.17
0.85
0.65
0.013 0.015 0.016
0.006 0.008 0.010
0.004 0.006 0.008
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.014
A
b1 0.10
c
D
E
e
0.07
0.75
0.55
H
0.95
0.05
1.05
0.15
0.037 0.039 0.041
0.002 0.004 0.006
E
L
L
c
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.35
0.30
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST3906F3/D
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