NST857AMX2T5G [ONSEMI]
Small Signal Bipolar Transistor;
| 型号： | NST857AMX2T5G |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor 晶体管 |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST857AMX2,
NST857BMX2
Product Preview
General Purpose
Transistors
www.onsemi.com
PNP Silicon
COLLECTOR
3
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
2
Rating
Symbol
Value
−45
Unit
V
EMITTER
Collector-Emitter Voltage
Collector-Base Voltage
V
CEO
V
CBO
V
EBO
−50
V
3
Emitter−Base Voltage
−5.0
−100
−200
V
1
2
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
I
I
mAdc
mAdc
C
X2DFN3 (1.0x0.6)
CASE 714AC
C
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
Derate above 25°C
225
1.8
mW
mW/°C
A
XX M
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
XX = Specific Device Code
M
= Date Code
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
q
JA
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2019 − Rev. P0
NST857AMX2/D
NST857AMX2, NST857BMX2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
(I = −10 mA)
V
−45
−50
−50
−5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
(I = −10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
(I = −10 mA)
C
V
V
(I = −1.0 mA)
E
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −10 mA, V = −5.0 V)
NST857A
NST857B
−
−
90
150
−
−
C
CE
(I = −2.0 mA, V = −5.0 V)
NST857A
NST857B
125
220
180
290
250
475
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
−
4.5
ob
(V = −10 V, f = 1.0 MHz)
CB
Noise Figure
NF
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
NST857A
NST857B
−
−
−
−
10
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NST857AMX2, NST857BMX2
NST857
2.0
1.5
-1.0
T = 25°C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I /I = 10
C B
BE(sat)
T = 25°C
A
1.0
0.7
0.5
V
BE(on)
@ V = -10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55°C to +125°C
T = 25°C
A
I =
C
-10 mA
I = -50 mA
C
I = -200 mA
C
I = -100 mA
C
I = -20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
CE
= -10 V
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
NST857AMX2, NST857BMX2
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
(t) = r(t) R
q
JC
0.1
q
JC
0.1
0.07
0.05
R
Z
= 83.3°C/W MAX
(t) = r(t) R
q
JA
q
JC
P
(pk)
SINGLE PULSE
q
JA
R
= 200°C/W MAX
t
1
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
2
0.03
0.02
DUTY CYCLE, D = t /t
1 2
1
T
- T = P
C
R (t)
q
JC
J(pk)
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 7. Thermal Response
The safe operating area curves indicate I −V limits of
-200
C
CE
1 s
3 ms
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
T = 25°C
T = 25°C
A
J
The data of Figure 14 is based upon T
T is variable depending upon conditions. Pulse curves are
= 150°C; T or
J(pk)
C
A
valid for duty cycles to 10% provided T
≤ 150°C. T
J(pk)
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
-10
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 8. Active Region Safe Operating Area
ORDERING INFORMATION
Device
†
Marking
TBD
Package
Shipping
NST857AMX2T5G
NST857BMX2T5G
X2DFN3
(1.0x0.6)
8,000 / Tape & Reel
TBD
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
4
NST857AMX2, NST857BMX2
PACKAGE DIMENSIONS
X2DFN3 1.0x0.6, 0.35P
CASE 714AC
ISSUE A
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any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
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◊
NST857AMX2/D
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