NSVF5488SKT3G [ONSEMI]

RF Transistor for Low Noise Amplifier;
NSVF5488SKT3G
型号: NSVF5488SKT3G
厂家: ONSEMI    ONSEMI
描述:

RF Transistor for Low Noise Amplifier

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NSVF5488SK  
RF Transistor for Low Noise  
Amplifier  
10 V, 70 mA, fT = 7 GHz typ. RF Transistor  
This RF transistor is designed for RF amplifier applications. SSFP  
package is contribute to down size of application because it is small  
surface mount package. This RF transistor is AECQ101 qualified and  
PPAP capable for automotive applications.  
www.onsemi.com  
3
1
2
Features  
Lownoise:  
High Gain:  
NF = 1.0 dB typ. (f = 1 GHz)  
|S21e| = 12 dB typ. (f = 1 GHz)  
SOT623 / SSFP  
CASE 631AC  
2
High Cutoff Frequency: f = 7 GHz typ.  
T
SSFP Package is Pincompatible with SOT623  
ELECTRICAL CONNECTION NPN  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
3
1
Typical Applications  
1 : Base  
2 : Emitter  
3 : Collector  
RF Amplifier for RKE  
2
RF Amplifier for ADAS  
RF Amplifier for Remote Engine Starter  
RF Amplifier for UHF Application  
MARKING DIAGRAM  
LN  
LN  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
February, 2019 Rev. 0  
NSVF5488SK/D  
NSVF5488SK  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C  
Parameter  
Collector to Base Voltage  
Symbol  
Value  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
20  
Collector to Emitter Voltage  
Emitter to Base Voltage  
10  
V
2
70  
V
Collector Current  
I
C
mA  
mW  
°C  
Collector Dissipation  
P
C
100  
Operating Junction and Storage Temperature  
Tj, Tstg  
55 to +150  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS at Ta = 25°C  
Value  
Min  
Typ  
Max  
1.0  
10  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
Conditions  
= 10 V, I = 0 A  
Unit  
mA  
I
V
V
V
V
V
CBO  
CB  
EB  
CE  
CE  
CB  
E
I
= 1 V, I = 0 A  
mA  
EBO  
C
h
FE  
= 5 V, I = 20 mA  
90  
200  
C
GainBandwidth Product  
Output Capacitance  
f
T
= 5 V, I = 20 mA  
5
7
GHz  
pF  
C
Cob  
Cre  
= 10 V, f = 1 MHz  
0.7  
0.45  
12  
1.2  
Reverse Transfer Capacitance  
Forward Transfer Gain  
pF  
2
| S21e | 1  
V
CE  
V
CE  
V
CE  
= 5 V, I = 20 mA, f = 1 GHz  
9
dB  
dB  
dB  
C
2
| S21e | 2  
= 2 V, I = 3 mA, f = 1 GHz  
8.5  
1.0  
C
Noise Figure  
NF  
= 5 V, I = 7 mA, f = 1 GHz  
C
1.8  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pay attention to handling since it is liable to be affected by static electricity due to the highfrequency process adopted.  
www.onsemi.com  
2
NSVF5488SK  
TYPICAL CHARACTERISTICS  
f
−− I  
C
h
FE  
−− I  
C
T
2
3
2
V
=5V  
V
=5V  
CE  
CE  
10  
100  
7
7
5
5
3
2
3
2
1.0  
10  
7
5
7
5
72  
2
3
5
7
2
3
5
7
3
5
7
2
3
57  
223  
57  
1.0  
10  
100  
1.0  
10  
100  
Collector Current, I −− mA  
Collector Current, I −− mA  
C
C
Figure 1.  
Figure 2.  
Cob −− V  
CB  
Cre −− V  
CB  
3
2
3
f=1MHz  
f=1MHz  
2
1.0  
1.0  
7
5
7
5
3
2
3
2
0.1  
0.1  
7
5
7
5
7
25  
3
73  
2
5
7
2
3
7
25  
3
73  
2
5
7
2
3
0.1  
1.0  
10  
0.1  
1.0  
10  
CollectortoBase Voltage, V −−V  
CollectortoBase Voltage, V −−V  
CB  
CB  
Figure 3.  
Figure 4.  
2
NF −− I  
S21e  
−− I  
C
|
|
C
12  
10  
8
14  
12  
10  
8
V
= 5 V  
f=1GHz  
CE  
f = 1 GHz  
6
6
4
4
2
0
2
0
3
5
7
2
3
57  
223  
57  
33 57  
2
5
7
2
3
5
7
100  
2
1.0  
10  
100  
1.0  
10  
Collector Current, I −− mA  
Collector Current, I −− mA  
C
C
Figure 6.  
Figure 5.  
www.onsemi.com  
3
NSVF5488SK  
TYPICAL CHARACTERISTICS  
P
−− Ta  
C
120  
100  
80  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta −− _C  
Figure 7.  
www.onsemi.com  
4
NSVF5488SK  
S PARAMETERS (COMMON EMITTER)  
Freq (MHz)  
|S11|  
-S11  
|S21|  
-S21  
|S12|  
-S12  
|S22|  
-S22  
V
CE  
V
CE  
V
CE  
= 5 V, I = 7 mA, Z = 50 W  
C
O
100  
200  
0.786  
40.7  
72.4  
17.507  
13.998  
9.061  
6.442  
5.005  
4.073  
3.449  
2.989  
2.658  
2.378  
2.154  
151.3  
131.4  
108.6  
96.1  
87.3  
80.4  
74.0  
68.6  
63.8  
58.4  
54.0  
0.028  
0.046  
0.064  
0.076  
0.087  
0.099  
0.111  
0.124  
0.138  
0.151  
0.166  
70.1  
58.0  
49.6  
49.3  
50.8  
52.6  
54.0  
55.2  
56.6  
56.7  
56.7  
0.898  
0.739  
0.525  
0.423  
0.374  
0.346  
0.332  
0.321  
0.319  
0.313  
0.311  
20.4  
33.4  
43.7  
46.7  
44.4  
49.7  
51.6  
54.1  
56.2  
60.0  
63.2  
0.677  
0.546  
0.492  
0.473  
0.465  
0.457  
0.451  
0.449  
0.454  
0.460  
400  
112.7  
135.2  
150.0  
160.0  
169.5  
176.2  
177.8  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
172.5  
167.1  
= 5 V, I = 20 mA, Z = 50 W  
C
O
100  
200  
0.601  
65.8  
103.7  
139.6  
156.6  
166.6  
174.0  
178.6  
28.967  
19.309  
10.891  
7.461  
5.695  
4.613  
3.870  
3.345  
2.960  
2.655  
2.406  
137.1  
116.6  
98.6  
89.3  
82.5  
77.0  
71.8  
66.9  
62.7  
58.0  
54.0  
0.023  
0.035  
0.050  
0.065  
0.081  
0.098  
0.114  
0.131  
0.148  
0.165  
0.182  
64.1  
57.0  
58.7  
61.3  
63.1  
63.8  
63.9  
63.6  
63.2  
61.8  
60.6  
0.757  
0.534  
0.345  
0.280  
0.251  
0.235  
0.226  
0.221  
0.220  
0.219  
0.218  
32.9  
50.3  
50.3  
50.7  
51.3  
52.9  
55.1  
57.7  
60.2  
64.8  
68.3  
0.497  
0.435  
0.419  
0.414  
0.413  
0.413  
0.411  
0.413  
0.416  
0.422  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
173.8  
169.6  
165.1  
160.3  
= 2 V, I = 3 mA, Z = 50 W  
C
O
100  
200  
0.888  
30.2  
56.4  
9.280  
8.218  
6.074  
4.517  
3.610  
2.995  
2.540  
2.213  
1.982  
1.774  
1.614  
158.6  
141.3  
116.7  
101.4  
90.4  
0.038  
0.067  
0.098  
0.112  
0.120  
0.125  
0.131  
0.137  
0.143  
0.152  
0.163  
73.6  
60.5  
45.1  
38.4  
35.8  
35.7  
36.5  
38.4  
40.7  
42.5  
44.7  
0.949  
0.849  
0.657  
0.539  
0.475  
0.434  
0.410  
0.393  
0.391  
0.382  
0.381  
15.1  
26.9  
41.1  
47.6  
51.2  
54.5  
57.5  
60.7  
64.0  
67.8  
72.1  
0.815  
0.690  
0.616  
0.584  
0.566  
0.555  
0.546  
0.541  
0.545  
0.547  
400  
96.0  
600  
120.7  
138.0  
150.7  
161.2  
169.3  
176.4  
177.1  
800  
1000  
1200  
1400  
1600  
1800  
2000  
81.9  
74.2  
67.5  
62.0  
55.9  
170.9  
50.9  
ORDERING INFORMATION  
Device  
Marking  
LN  
Package  
Shipping  
NSVF5488SKT3G  
SOT623 / SSFP  
(PbFree / Halogen Free)  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOT623 / SSFP  
CASE 631AC  
ISSUE O  
DATE 29 FEB 2012  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON67431E  
SOT623 / SSFP  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2019  
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