NSVMMBT6429LT1G [ONSEMI]
NPN 双极晶体管;
| 型号： | NSVMMBT6429LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 晶体管 |
| 文件： | 总6页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
Rating
Symbol 6428LT1 6429LT1
Unit
Vdc
EMITTER
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
V
EBO
50
60
45
55
Vdc
6.0
Vdc
3
SOT−23 (TO−236)
Collector Current − Continuous
I
200
mAdc
C
CASE 318
STYLE 6
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Total Device Dissipation FR−5 Board
P
D
225
mW
(Note 1) T = 25°C
Derate above 25°C
A
xxx M
1.8
mW/°C
°C/W
1
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
Total Device Dissipation Alumina
P
300
mW
D
xxx
M
= Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − 1L
= Date Code
Substrate, (Note 2) T = 25°C
A
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
ORDERING INFORMATION
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†
Device
Package
Shipping
3000 Tape & Reel
3000 Tape & Reel
MMBT6428LT1
MMBT6428LT1G
SOT−23
SOT−23
(Pb−Free)
3000 Tape & Reel
3000 Tape & Reel
MMBT6429LT1
SOT−23
MMBT6429LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2005 − Rev. 3
MMBT6428LT1/D
MMBT6428LT1, MMBT6429LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
MMBT6428
MMBT6429
50
45
−
−
C
B
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
Vdc
(BR)CBO
MMBT6428
MMBT6429
60
55
−
−
C
E
(I = 0.1 mAdc, I = 0)
C
E
Collector Cutoff Current
(V = 30 Vdc)
CE
I
mAdc
mAdc
mAdc
CES
−
−
−
0.1
Collector Cutoff Current
I
CBO
(V = 30 Vdc, I = 0)
0.01
0.01
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.01 mAdc, V = 5.0 Vdc)
MMBT6428
MMBT6429
250
500
−
−
C
CE
(I = 0.1 mAdc, V = 5.0 Vdc)
MMBT6428
MMBT6429
250
500
650
1250
C
CE
(I = 1.0 mAdc, V = 5.0 Vdc)
MMBT6428
MMBT6429
250
500
−
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
MMBT6428
MMBT6429
250
500
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.6
C
B
(I = 100 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter On Voltage
(I = 1.0 mAdc, V = 5.0 mAdc)
V
BE(on)
0.56
0.66
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 1.0 mAdc, V = 5.0 Vdc, f = 100 MHz)
100
−
700
3.0
8.0
C
CE
Output Capacitance
C
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MMBT6428LT1, MMBT6429LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
20
I
C
= 10 mA
R ≈ 0
S
R ≈ 0
S
f = 10 Hz
10 kHz
3.0 mA
1.0 mA
10
7.0
5.0
10
7.0
5.0
100 Hz
1.0 kHz
300 mA
100 kHz
5.0
3.0
3.0
0.01 0.02
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
0.05 0.1 0.2
0.5 1.0
2.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
16
BANDWIDTH = 1.0 Hz
7.0
5.0
I
C
= 10 mA
3.0
2.0
BANDWIDTH = 10 Hz to 15.7 kHz
3.0 mA
1.0 mA
12
8.0
4.0
0
1.0
0.7
0.5
I
C
= 1.0 mA
500 mA
100 mA
10 mA
300 mA
100 mA
30 mA
0.3
0.2
10 mA
R ≈ 0
S
0.1
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk
5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I = 10 mA
C
3.0 mA
16
12
I
C
= 10 mA
100 mA
3.0 mA
1.0 mA
100
70
1.0 mA
50
30
20
300 mA
300 mA
8.0
30 mA
100 mA
30 mA
10
10 mA
4.0
0
7.0
5.0
10 mA
BANDWIDTH = 1.0 Hz
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
3.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
R , SOURCE RESISTANCE (OHMS)
S
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
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3
MMBT6428LT1, MMBT6429LT1
4.0
3.0
V
CE
= 5.0 V
2.0
T = 125°C
A
25°C
1.0
0.7
−ꢁ55°C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
−ꢁ0.4
−ꢁ0.8
T = 25°C
J
0.8
0.6
0.4
0.2
0
V
BE
@ V = 5.0 V
CE
−ꢁ1.2
−ꢁ1.6
−ꢁ2.0
−ꢁ2.4
T = 25°C to 125°C
J
−ꢁ55°C to 25°C
V
@ I /I = 10
C B
CE(sat)
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.5
10 20
50 100
0.5
10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
8.0
6.0
500
T = 25°C
J
300
200
C
ob
C
ib
4.0
3.0
C
eb
C
cb
2.0
100
V
= 5.0 V
CE
T = 25°C
70
50
J
1.0
0.8
0.1
0.2
1.0
2.0
5.0
1.0
2.0 3.0
5.0 7.0
0.5
10
20
50 100
10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain — Bandwidth Product
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4
MMBT6428LT1, MMBT6429LT1
PACKAGE DIMENSIONS
SOT−23 (TO236)
CASE 318−18
ISSUE AK
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MMBT6428LT1, MMBT6429LT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT6428LT1/D
相关型号：
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