NSVMMUN2135LT1G [ONSEMI]
PNP Bipolar Digital Transistor (BRT);
| 型号： | NSVMMUN2135LT1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP Bipolar Digital Transistor (BRT) 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN2135, MMUN2135L,
MUN5135, DTA123JE,
DTA123JM3, NSBA123JF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 47 kW
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PNP Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SOT−23
CASE 318
STYLE 6
XXX MG
Compliant
G
1
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
SC−70/SOT−323
CASE 419
XX MG
V
CBO
CEO
G
STYLE 3
V
50
Vdc
1
I
C
100
12
mAdc
Vdc
SC−75
CASE 463
STYLE 1
XX M
XX M
V
IN(fwd)
Input Reverse Voltage
V
IN(rev)
5
Vdc
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−723
CASE 631AA
STYLE 1
1
SOT−1123
CASE 524AA
STYLE 1
X M
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
March, 2015 − Rev. 3
DTA123J/D
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
Shipping
MUN2135T1G
6R
SC−59
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
MMUN2135LT1G,
NSVMMUN2135LT1G*
ACA
6M
SOT−23
(Pb−Free)
MUN5135T1G
SC−70/SOT−323
(Pb−Free)
DTA123JET1G
DTA123JM3T5G
NSBA123JF3T5G
6M
SC−75
(Pb−Free)
6M
SOT−723
(Pb−Free)
J (90°)**
SOT−1123
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
**(XX°) = Degree rotation in the clockwise direction.
300
250
(1) SC−75 and SC−70/SOT323; Minimum Pad
200
(2) SC−59; Minimum Pad
(1) (2) (3) (4) (5)
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm , 1 oz. copper trace
(5) SOT−723; Minimum Pad
2
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2135)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2135L)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
246
400
2.0
3.2
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
508
311
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
174
208
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5135)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA123JE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
THERMAL CHARACTERISTICS (SOT−723) (DTA123JM3)
Total Device Dissipation
T = 25°C
A
P
D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
2
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
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3
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA123JF3)
Total Device Dissipation
Symbol
Max
Unit
P
D
T = 25°C
A
(Note 3)
(Note 4)
(Note 3)
(Note 4)
254
297
2.0
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
R
493
421
°C/W
q
JA
Thermal Resistance, Junction to Lead
(Note 3)
R
193
°C/W
°C
q
JL
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
2
3. FR−4 @ 100 mm , 1 oz. copper traces, still air.
2
4. FR−4 @ 500 mm , 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.2
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 5)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 5)
h
FE
(I = 5.0 mA, V = 10 V)
80
−
140
−
−
0.25
0.5
−
C
CE
Collector *Emitter Saturation Voltage (Note 5)
(I = 10 mA, I = 0.3 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
kW
CE(sat)
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
i(off)
V
i(on)
−
0.6
0.8
−
CE
C
Input Voltage (on)
(V = 0.3 V, I = 5.0 mA)
1.1
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
1.5
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
2.2
2.9
0.038
0.047
0.056
1
2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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4
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
TYPICAL CHARACTERISTICS
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3
1000
1
V
CE
= 10 V
I /I = 10
C
B
25°C
100
150°C
25°C
−55°C
150°C
0.1
10
1
−55°C
0.01
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
7
6
5
4
3
2
1
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
150°C
−55°C
I
E
25°C
0.1
0.01
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
1
2
3
4
V , REVERSE BIAS VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
25°C
1
−55°C
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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5
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
TYPICAL CHARACTERISTICS
NSBA123JF3
1000
1
V
CE
= 10 V
I /I = 10
C
B
150°C
25°C
25°C
100
150°C
−55°C
0.1
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
7
6
5
4
3
2
1
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
150°C
I
E
−55°C
25°C
0.1
0.01
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
1
2
3
V , REVERSE BIAS VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
150°C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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6
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
D
SEE VIEW C
3
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
H
E
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
A
L
STYLE 6:
A1
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
b1
−Y−
3
E
HE
1
2
MILLIMETERS
DIM MIN
2X b
3X
C
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
b1
C
D
E
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
L
1.20
0.80
1
0.40 BSC
e
H E
L
L2
1.15
0.15
1.20
0.29 REF
0.20
1.25
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
−X−
D
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
3
E
TOP VIEW
MILLIMETERS
A
DIM MIN
MAX
0.40
0.28
0.20
0.17
0.85
0.65
0.40
1.05
A
b
0.34
0.15
b1 0.10
c
D
E
e
0.07
0.75
0.55
0.35
0.95
H
c
E
H
E
SIDE VIEW
L
0.185 REF
L2 0.05
0.15
STYLE 1:
PIN 1. BASE
b
3X
L2
2. EMITTER
3. COLLECTOR
0.08 X Y
e
3X
L
2X
b1
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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