NSVMMUN2236LT1G [ONSEMI]
NPN Bipolar Digital Transistor (BRT);
| 型号： | NSVMMUN2236LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Digital Transistor (BRT) 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN2236, MMUN2236L,
MUN5236, DTC115EE,
DTC115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
www.onsemi.com
NPN Transistors with Monolithic Bias
Resistor Network
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
SOT−23
CASE 318
STYLE 6
XXX MG
Compliant
G
MAXIMUM RATINGS (T = 25°C)
1
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
SC−70/SOT−323
CASE 419
XX MG
V
CBO
G
STYLE 3
V
CEO
50
Vdc
1
I
C
100
40
mAdc
Vdc
SC−75
CASE 463
STYLE 1
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
IN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−723
CASE 631AA
STYLE 1
1
XXX
M
G
=
=
=
Specific Device Code
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
November, 2016 − Rev. 3
DTC115E/D
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
Shipping
MUN2236T1G
8N
SC−59
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
MMUN2236LT1G
AA5
8N
SOT−23
(Pb−Free)
MUN5236T1G, NSVMUN5236T1G*
DTC115EET1G
SC−70/SOT−323
(Pb−Free)
8N
SC−75
(Pb−Free)
DTC115EM3T5G
8N
SOT−723
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP
Capable.
300
250
(1) SC−75 and SC−70/SOT323; Minimum Pad
200
(2) SC−59; Minimum Pad
(1) (2) (3) (4)
(3) SOT−23; Minimum Pad
(4) SOT−723; Minimum Pad
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2236)
Total Device Dissipation
T = 25°C
A
P
D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2236L)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
246
400
2.0
3.2
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
508
311
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
174
208
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5236)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC115EE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC115EM3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
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3
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.05
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 5.0 mA, V = 10 V)
80
−
150
−
−
0.25
0.5
−
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 10 mA, I = 0.3 mA)
V
Vdc
Vdc
Vdc
Vdc
Vdc
kW
CE(sat)
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
V
i(off)
−
1.2
1.7
−
CE
C
Input Voltage (on)
(V = 0.3 V, I = 1.0 mA)
i(on)
3.0
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
V
OL
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
4.9
70
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
100
1.0
130
1.2
0.8
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
TYPICAL CHARACTERISTICS
MUN2236, MMUN2236L, MUN5236, NSVMUN5236, DTC115EE, DTC115EM3
1
1000
V
CE
= 10 V
I /I = 10
C
B
T = −25°C
A
75°C
25°C
25°C
75°C
T = −25°C
A
0.1
100
0.01
10
0
5
10
15
20
25
30
35
40
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
3.6
3.2
75°C
f = 10 kHz
= 0 A
T = 25°C
A
T = −25°C
A
l
E
2.8
2.4
2.0
1.6
1.2
0.8
10
1
25°C
V
O
= 5 V
35
0.4
0
0.1
0
10
20
30
40
50
0
5
10
15
20
25
30
40
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
25°C
75°C
V
O
= 0.2 V
T = −25°C
A
10
1
0.1
0
5
10
15
20
25
30
35
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
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5
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
7
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
8
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.061 0.063 0.065
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
0.20 (0.008) E
H
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.060 0.063 0.067
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
D
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
b1
−Y−
3
E
HE
1
2
MILLIMETERS
DIM MIN
2X b
3X
C
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
b1
C
D
E
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
L
1.20
0.80
1
0.40 BSC
e
H E
L
L2
1.15
0.15
1.20
0.29 REF
0.20
1.25
0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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