NSVMMUN2231LT1G [ONSEMI]
NPN Bipolar Digital Transistor (BRT);
| 型号： | NSVMMUN2231LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Digital Transistor (BRT) 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−70/SOT−323 package which is designed for low power
surface mount applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTORS
• Simplifies Circuit Design
• Reduces Board Space
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
• Reduces Component Count
R
R
1
• The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel.
2
PIN 2
EMITTER
(GROUND)
• Pb−Free Packages are Available
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
8x
M
V
V
CBO
CEO
SC−70/SOT−323
CASE 419
50
Vdc
STYLE 3
I
100
mAdc
C
THERMAL CHARACTERISTICS
Characteristic
8x
x
M
= Specific Device Code
= (See Marking Table)
= Date Code
Symbol
Max
Unit
Total Device Dissipation
P
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
D
T = 25°C
A
Derate above 25°C
mW/°C
°C/W
°C/W
°C
Thermal Resistance −
Junction−to−Ambient
R
q
JA
618 (Note 1)
403 (Note 2)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Thermal Resistance −
Junction−to−Lead
R
q
JL
280 (Note 1)
332 (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to +150
J
stg
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
November, 2004 − Rev. 6
MUN5211T1/D
MUN5211T1 Series
DEVICE MARKING AND RESISTOR VALUES
†
Device
MUN5211T1
Package
Marking
8A
R1 (K)
R2 (K)
10
Shipping
SC−70/SOT−323
10
10
3000 / Tape & Reel
3000 / Tape & Reel
MUN5211T1G
SC−70/SOT−323
(Pb−Free)
8A
10
MUN5212T1
SC−70/SOT−323
8B
8B
22
22
22
22
3000 / Tape & Reel
3000 / Tape & Reel
MUN5212T1G
SC−70/SOT−323
(Pb−Free)
MUN5213T1
SC−70/SOT−323
8C
8C
47
47
47
47
3000 / Tape & Reel
3000 / Tape & Reel
MUN5213T1G
SC−70/SOT−323
(Pb−Free)
MUN5214T1
SC−70/SOT−323
8D
8D
10
10
47
47
3000 / Tape & Reel
3000 / Tape & Reel
MUN5214T1G
SC−70/SOT−323
(Pb−Free)
MUN5215T1 (Note 3)
MUN5215T1G (Note 3)
SC−70/SOT−323
8E
8E
10
10
∞
∞
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5216T1 (Note 3)
MUN5216T1G (Note 3)
SC−70/SOT−323
8F
8F
4.7
4.7
∞
∞
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5230T1 (Note 3)
MUN5231T1 (Note 3)
MUN5231T1G (Note 3)
SC−70/SOT−323
SC−70/SOT−323
8G
8H
8H
1.0
2.2
2.2
1.0
2.2
2.2
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5232T1 (Note 3)
MUN5232T1G (Note 3)
SC−70/SOT−323
8J
8J
4.7
4.7
4.7
4.7
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5233T1 (Note 3)
MUN5233T1G (Note 3)
SC−70/SOT−323
8K
8K
4.7
4.7
47
47
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5234T1 (Note 3)
MUN5235T1 (Note 3)
MUN5235T1G (Note 3)
SC−70/SOT−323
SC−70/SOT−323
8L
8M
8M
22
2.2
2.2
47
47
47
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
SC−70/SOT−323
(Pb−Free)
MUN5236T1 (Note 3)
MUN5237T1 (Note 3)
SC−70/SOT−323
SC−70/SOT−323
8N
8P
100
47
100
22
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN5211T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
Symbol
Min
Typ
Max
Unit
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
EBO
EB
C
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 4)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 4)
DC Current Gain
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
h
FE
35
60
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
CE
C
80
80
160
160
3.0
8.0
15
15
30
200
150
140
150
140
80
80
80
80
80
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA)
MUN5230T1/MUN5231T1
MUN5215T1/MUN5216T1/
MUN5232T1/MUN5233T1/MUN5234T1
C
C
B
B
(I = 10 mA, I = 1 mA)
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
MUN5211T1
MUN5212T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5213T1
MUN5236T1
MUN5237T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
MUN5211T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 kW)
MUN5230T1
MUN5215T1
MUN5216T1
MUN5233T1
CC
CC
B
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
L
Input Resistor
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1
MUN5216T1
MUN5230T1
MUN5231T1
MUN5232T1
MUN5233T1
MUN5234T1
MUN5235T1
MUN5236T1
MUN5237T1
R
1
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
kW
47
10
10
7.0
13
3.3
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
6.1
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
1.54
70
28.6
2.86
130
61.1
32.9
Resistor Ratio
MUN5211T1/MUN5212T1/MUN5213T1/
MUN5236T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
MUN5214T1
MUN5215T1/MUN5216T1
MUN5230T1/MUN5231T1/MUN5232T1
MUN5233T1
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
MUN5234T1
MUN5235T1
MUN5237T1
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
350
300
250
200
150
100
R
q
JA
= 403°C/W
50
0
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
4
MUN5211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5211T1
1
1000
I /I = 10
C B
V
= 10 V
T ꢀ=ꢀ−25°C
A
CE
25°C
T ꢀ=ꢀ75°C
A
25°C
0.1
−25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢀ=ꢀ−25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
= 0.2 V
T ꢀ=ꢀ−25°C
A
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
http://onsemi.com
5
MUN5211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5212T1
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
25°C
T ꢀ=ꢀ−25°C
A
0.1
−25°C
75°C
100
0.01
10
0.001
1
10
100
0
20
40
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T ꢀ=ꢀ−25°C
A
E
T = 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
http://onsemi.com
6
MUN5211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5213T1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢀ=ꢀ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢀ=ꢀ−25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T ꢀ=ꢀ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
http://onsemi.com
7
MUN5211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5214T1
1
300
T ꢀ=ꢀ75°C
A
V
= 10
I /I = 10
C B
CE
T ꢀ=ꢀ−25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
−25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l = 0 V
T ꢀ=ꢀ75°C
25°C
A
E
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
= 0.2 V
O
T ꢀ=ꢀ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
http://onsemi.com
8
MUN5211T1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter:
Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
http://onsemi.com
9
MUN5211T1 Series
PACKAGE DIMENSIONS
SC−70/SOT−323
CASE 419−04
ISSUE L
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.80
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.00
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.032
0.012
0.047
0.000
0.004
0.087
0.053
0.040
0.016
0.055
0.004
0.010
D
G
K
L
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
J
N
C
N
S
0.079
0.095
2.00
2.40
0.05 (0.002)
STYLE 3:
K
H
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MUN5211T1/D
相关型号：
©2020 ICPDF网 联系我们和版权申明