NSVMSD42WT1G [ONSEMI]
High Voltage NPN Bipolar Transistor;
| 型号： | NSVMSD42WT1G |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage NPN Bipolar Transistor 放大器 光电二极管 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSD42WT1, MSD42T1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 and
SC−59 packages which are designed for low power surface mount
applications.
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COLLECTOR
3
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
300
300
6.0
Unit
Vdc
1
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
BASE
EMITTER
V
V
Vdc
Vdc
3
3
Collector Current − Continuous
THERMAL CHARACTERISTICS
Rating
I
150
mAdc
C
1
2
2
1
Symbol
Max
150
Unit
mW
°C
SC−70 (SOT−323)
CASE 419
(SCALE 2:1)
SC−59
CASE 318D
(SCALE 2:1)
Power Dissipation (Note 1)
Junction Temperature
P
D
T
150
J
Storage Temperature Range
T
stg
−55X+150
°C
MARKING DIAGRAMS
ELECTRICAL CHARACTERISTICS
Characteristic
1D
M
J1D M
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V
300
−
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector-Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
300
6.0
−
−
Vdc
Vdc
mA
mA
−
1D = Device Marking Code
= Date Code
C
E
M
Emitter-Base Breakdown Voltage
(I = 100 mAdc, I = 0)
−
E
E
ORDERING INFORMATION
Collector-Base Cutoff Current
(V = 200 Vdc, I = 0)
I
I
0.1
0.1
CBO
†
Device
Package
Shipping
CB
E
Emitter−Base Cutoff Current
(V = 6.0 Vdc, I = 0)
−
MSD42WT1 SC−70/SOT−323 3000/Tape & Reel
MSD42WT1G SC−70/SOT−323 3000/Tape & Reel
EBO
EB
B
DC Current Gain (Note 2)
(V = 10 Vdc, I = 1.0 mAdc)
h
FE1
h
FE2
25
40
−
−
CE
C
MSD42T1
SC−59
3000/Tape & Reel
(V = 10 Vdc, I = 30 mAdc)
CE
C
Collector-Emitter Saturation Voltage
(Note 2) (I = 20 mAdc,
V
−
0.5
Vdc
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CE(sat)
C
I
B
= 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommendedfootprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. 6
MSD42WT1/D
MSD42WT1, MSD42T1
120
100
V
CE
= 10 Vdc
T = +125°C
J
80
60
25°C
40
20
0
−55°C
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
10
C
@ 1MHz
eb
1.0
0.1
C
@ 1MHz
cb
0.1
1.0
10
100
1000
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
C B
@ 125°C, I /I = 10
C B
CE(sat)
CE(sat)
CE(sat)
BE(sat)
V
V
@ −55°C, I /I = 10
C B
@ 25°C, I /I = 10
C
B
V
V
V
@ 125°C, I /I = 10
C B
BE(sat)
BE(sat)
BE(on)
@ −55°C, I /I = 10
C
B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
CE
@ −55°C, V = 10 V
CE
BE(on)
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 3. “ON” Voltages
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2
MSD42WT1, MSD42T1
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE L
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.80
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.00
0.40
1.40
0.10
0.25
A
B
C
D
G
H
J
0.071
0.045
0.032
0.012
0.047
0.000
0.004
0.087
0.053
0.040
0.016
0.055
0.004
0.010
D
G
K
L
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
J
N
C
N
S
0.079
0.095
2.00
2.40
STYLE 3:
PIN 1. BASE
0.05 (0.002)
K
H
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.7
0.028
SC−70/SOT−323
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
MSD42WT1, MSD42T1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
3
S
B
A
B
C
D
G
H
J
2.70
1.30
1.00
0.35
1.70
0.013
0.09
0.20
1.25
2.50
3.10 0.1063 0.1220
1.70 0.0512 0.0669
1.30 0.0394 0.0511
0.50 0.0138 0.0196
2.10 0.0670 0.0826
0.100 0.0005 0.0040
0.18 0.0034 0.0070
0.60 0.0079 0.0236
1.65 0.0493 0.0649
3.00 0.0985 0.1181
2
1
D
G
K
L
S
J
C
K
H
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
SC−59
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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MSD42WT1/D
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