NSVT45011MW6T1G [ONSEMI]
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
| 型号： | NSVT45011MW6T1G |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| 文件： | 总5页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST45011MW6T1G,
NSVT45011MW6T1G
Dual Matched General
Purpose Transistor
NPN Matched Pair
http://onsemi.com
These transistors are housed in an ultra−small SOT−363 package
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
SOT−363
CASE 419B
STYLE 1
Features
• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to 2 mV
• Drop−In Replacement for Standard Device
• AEC−Q101 Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
(3)
(2)
(1)
Q
Q
1
2
(4)
(5)
(6)
MARKING DIAGRAMS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
45
Unit
V
V
CEO
V
CBO
V
EBO
2F MG
G
50
V
6.0
V
Collector Current − Continuous
I
C
100
mAdc
2F = Device Code
M
G
= Date Code
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
ORDERING INFORMATION
†
Characteristic
Symbol
Max
Unit
Device
Package
Shipping
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
P
380
250
mW
NST45011MW6T1G
SOT−363
(Pb−Free) Tape & Reel
3,000 /
D
NSVT45011MW6T1G SOT−363 3,000 /
T = 25°C
A
(Pb−Free) Tape & Reel
Derate Above 25°C
3.0
mW/°C
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance,
Junction to Ambient
R
328
q
JA
Junction and Storage
Temperature Range
T , T
J
−55 to +150
°C
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 2
NST45011MW6/D
NST45011MW6T1G, NSVT45011MW6T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (I = 10 mA)
V
45
50
50
6.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage, (I = 10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage, (I = 10 mA)
V
V
C
Emitter−Base Breakdown Voltage, (I = 1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = 30 V)
−
−
−
−
15
5.0
nA
mA
CB
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
FE
(I = 10 mA, V = 5.0 V)
150
200
0.9
−
300
1.0
−
500
1.1
C
CE
(I = 2.0 mA, V = 5.0 V)
C
CE
CE
(I = 2.0 mA, V = 5.0 V) (Note 2)
h h
FE(1)/ FE(2)
C
Collector−Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
mV
mV
mV
CE(sat)
−
−
−
−
250
600
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
BE(sat)
700
850
750
890
800
950
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter On Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
−
660
−
1.0
700
770
2.0
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
(I = 2.0 mA, V = 5.0 V) (Note 3)
V V
BE(1) − BE(2)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product, (I = 10 mA, V = 5 Vdc, f = 100 MHz)
f
100
−
−
−
−
−
MHz
pF
C
CE
T
Output Capacitance, (V = 10 V, f = 1.0 MHz)
C
4.5
10
CB
ob
Noise Figure, (I = 0.2 mA, V = 5 Vdc, R = 2 kW, f = 1 kHz, BW = 200Hz)
NF
−
dB
C
CE
S
2. h
/h
BE(1)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator.
BE(2)
FE(1) FE(2) FE
3. V
− V
is the absolute difference of one transistor compared to the other transistor within the same package.
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2
NST45011MW6T1G, NSVT45011MW6T1G
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
-55°C to +125°C
A
I = 200 mA
C
I =
I = I = 50 mA
C
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
NST45011MW6T1G, NSVT45011MW6T1G
TYPICAL CHARACTERISTICS
200
100
50
The safe operating area curves indicate I −V limits
C
CE
1 s
3 ms
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
T = 25°C
T = 25°C
A
J
The data of Figure 7 is based upon T
= 150°C; T
J(pk)
C
or T is variable depending upon conditions.
A
10
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
1.0
5.0
10
30 45 65 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Active Region Safe Operating Area
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4
NST45011MW6T1G, NSVT45011MW6T1G
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
NOTES:
e
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
6
1
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
0.80
INCHES
NOM MAX
1.10 0.031 0.037 0.043
0.10 0.000 0.002 0.004
0.008 REF
MIN
H
−E−
E
A
0.95
0.05
A1 0.00
A3
0.20 REF
0.21
0.14
2.00
1.25
0.65 BSC
0.20
2.10
b
C
D
E
e
0.10
0.10
1.80
1.15
0.30 0.004 0.008 0.012
0.25 0.004 0.005 0.010
2.20 0.070 0.078 0.086
1.35 0.045 0.049 0.053
0.026 BSC
0.30 0.004 0.008 0.012
2.20 0.078 0.082 0.086
b 6 PL
M
M
E
0.2 (0.008)
L
0.10
2.00
H
E
A3
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
C
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
A
6. COLLECTOR 2
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NST45011MW6/D
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