NTBL080N60S5H [ONSEMI]
MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 32 A, 80 mΩ, TOLL;
| 型号： | NTBL080N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 32 A, 80 mΩ, TOLL |
| 文件： | 总7页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
80 mW @ 10 V
32 A
FAST, TOLL-4L
600 V, 80 mW, 32 A
NTBL080N60S5H
N−CHANNEL MOSFET
D
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application. The TOLL package offers improved thermal performance
and excellent switching performance by providing a Kelvin Source
configuration and lower parasitic source inductance.
Features
G
S1: Driver Source
S2: Power Source
S1
S2
• 650 V @ T = 150°C
J
• Typ. R
= 64 mW
• 100% Avalanche Tested
DS(ON)
• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
H−PSOF8L
CASE 100DC
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
Gate−to−Source Voltage
DC
V
GS
V
MARKING DIAGRAM
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
I
32
A
C
D
T
C
20
AYWWZZ
Power Dissipation
T
T
P
208
112
112
W
A
C
D
Pulsed Drain Current (Note 1)
I
DM
C
NTBL080
N60S5H
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
A
= Assembly Location
Y
= Year
Source Current (Body Diode)
I
S
32
A
WW
ZZ
= Work Week
= Assembly Lot Code
Single Pulse Avalanche
Energy
I = 5.8 A
G
E
AS
287
mJ
L
R
= 25 W
NTBL080N60S5H = Specific Device Code
Avalanche Current
I
5.8
2.08
120
20
A
AS
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
ORDERING INFORMATION
dv/dt
V/ns
†
Device
Package
Shipping
Peak Diode Recovery dv/dt (Note 2)
NTBL080N60S5H
H−PSOF8L
2000 / Tape
& Reel
Lead Temperature for Soldering Purposes
(1/8″ from Case for 10 Seconds)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 16 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 1
NTBL080N60S5H/D
NTBL080N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.6
43
Units
°C/W
°C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
θ
JC
JA
R
θ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
600
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 10 mA, Referenced to 25°C
630
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25°C
2
mA
DSS
GSS
DS
J
I
V
GS
=
30 V, V = 0 V
100
nA
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 16 A, T = 25°C
64
80
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 3.3 mA, T = 25°C
2.7
4.3
GS(TH)
DS
D
J
Forward Transconductance
g
FS
V
DS
= 20 V, I = 16 A
32.8
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
GS
= 0 V, f = 250 KHz,
DS
3127
46
pF
ISS
V
= 400 V
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
D
= Constant, V = 0 to 400 V,
719
OSS(tr)
DS
V
= 0 V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V, V = 0 to 400 V
77.1
55.8
15.1
14.6
1.17
OSS(er)
GS
DS
Q
V
= 10 V, V = 400 V,
nC
G(TOT)
GS DD
I
D
= 16 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
22.9
6.15
67
ns
d(ON)
GS
D
DD
I
= 16 A, R = 4.7 W
G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
2.54
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
= 0 V, I = 16 A, T = 25°C
1.2
V
SD
RR
GS
SD
J
t
V
GS
= 0 V, I = 16 A,
383
ns
nC
SD
dI /dt = 100 A/ms, V = 400 V
S
DD
Q
6092
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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2
NTBL080N60S5H
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
1000
T
VDS=20V
J=25°C
100
10
VGS=4V
VGS=4.5V
V
GS=5V
V
GS=6V
GS=7V
=10V
T
J=−55°C
V
T
J=25°C
V
T
J=150°C
GS
1
0
5
10
15
20
2
3
4
5
6
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
160
140
120
100
80
1000
100
10
T
VGS=0V
J=25°C
60
40
1
T
J=150°C
20
V
GS=10V
T
J=25°C
V
GS=20V
T
J=−55°C
0
0.1
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD , Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
104
103
102
101
100
10−1
10
8
ID=16A
VGS=0V
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
T
J=25°C
f=250KHz
6
4
2
C
ISS
C
VDD=130V
VDD=400V
OSS
C
RSS
0
0
100
200
300
400
500
600
0
10
20
30
40
50
60
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTBL080N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS =0V
ID=10mA
ID=16A
VGS=10V
2.5
2
1.5
1
1.05
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
35
30
25
20
15
10
5
102
101
T
C=25°C
T
J=150°C
Single Pulse
Limited by RDS(ON)
100
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
10−1
0
0.1
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
12
10
8
6
4
2
EOSS
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTBL080N60S5H
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
0.001
Notes:
ZθJC (t)=0.6°C/W Max
P
DM
TJM =PDM xZθJC (t)+TC
t1
Duty Cycle,D=t1 /t2
t2
0.0001
10 −6
10 −5
10 −4
10 −3
10 −2
10 −1
10 0
t,Rectangular Pulse Duration(s)
Figure 12. Transient Thermal Impedance
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5
NTBL080N60S5H
PACKAGE DIMENSIONS
H−PSOF8L 9.90x11.68, 1.20P
CASE 100DC
ISSUE O
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6
NTBL080N60S5H
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