NTD20N03L27T4G [ONSEMI]
Power MOSFET; 功率MOSFET
| 型号： | NTD20N03L27T4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
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Features
20 A, 30 V, RDS(on) = 27 mW
• Pb−Free Packages are Available
N−Channel
• Ultra−Low R , Single Base, Advanced Technology
DS(on)
• SPICE Parameters Available
D
• Diode is Characterized for use in Bridge Circuits
• I
and V
Specified at Elevated Temperatures
DSS
DS(on)
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
G
Typical Applications
S
• Power Supplies
• Inductive Loads
• PWM Motor Controls
MARKING
DIAGRAMS
• Replaces MTD20N03L in many Applications
4
Drain
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
4
DPAK
Rating
Symbol
Value
Unit
CASE 369C
STYLE 2
Drain−to−Source Voltage
V
30
30
Vdc
Vdc
Vdc
DSS
2
1
Drain−to−Gate Voltage (R = 1.0 MW)
V
DGR
GS
3
Gate−to−Source Voltage
− Continuous
2
1
Gate
3
V
V
"20
"24
GS
GS
Drain
− Non−Repetitive (t v10 ms)
Source
p
Drain Current
4
− Continuous @ T = 25_C
I
I
20
16
60
Adc
Apk
A
D
D
Drain
− Continuous @ T = 100_C
A
− Single Pulse (t v10 ms)
p
4
I
DM
DPAK−3
CASE 369D
STYLE 2
Total Power Dissipation @ T = 25_C
P
74
0.6
1.75
W
W/°C
W
A
D
Derate above 25°C
Total Power Dissipation @ T = 25°C (Note 1)
C
Operating and Storage Temperature Range
T , T
−55 to
150
°C
J
stg
1
2
3
Single Pulse Drain−to−Source Avalanche
E
AS
288
mJ
1
2
3
Energy − Starting T = 25°C
J
Gate Drain Source
(V = 30 Vdc, V = 5 Vdc, L = 1.0 mH,
DD
GS
I
= 24 A, V = 34 Vdc)
L(pk)
DS
20N3L
A
Y
= Device Code
= Assembly Location
= Year
Thermal Resistance
− Junction−to−Case
°C/W
R
R
R
1.67
100
71.4
q
JC
JA
JA
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
q
q
WW
= Work Week
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
°C
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 2
NTD20N03L27/D
NTD20N03L27
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
V
Vdc
(BR)DSS
(V = 0 Vdc, I = 250 mAdc)
Temperature Coefficient (Positive)
30
−
−
43
−
−
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
GSS
(V = 30 Vdc, V = 0 Vdc)
−
−
−
−
10
100
DS
GS
(V = 30 Vdc, V = 0 Vdc, T =150°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
Vdc
GS
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V = V , I = 250 mAdc)
V
GS(th)
DS(on)
DS(on)
1.0
−
1.6
5.0
2.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 2)
R
V
(V = 4.0 Vdc, I = 10 Adc)
−
−
28
23
31
27
GS
D
(V = 5.0 Vdc, I = 10 Adc)
GS
D
Static Drain−to−Source On−Voltage (Note 2)
(V = 5.0 Vdc, I = 20 Adc)
Vdc
−
−
0.48
0.40
0.54
−
GS
D
(V = 5.0 Vdc, I = 10 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 2) (V = 5.0 Vdc, I = 10 Adc)
g
FS
−
21
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
1005
271
87
1260
420
112
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
−
−
−
−
−
−
−
17
137
38
25
160
45
40
18.9
−
ns
d(on)
(V = 20 Vdc, I = 20 Adc,
DD
D
t
r
V
GS
= 5.0 Vdc,
Turn−Off Delay Time
Fall Time
t
d(off)
R
= 9.1 W) (Note 2)
G
t
f
31
Gate Charge
Q
T
Q
1
Q
2
13.8
2.8
6.6
nC
(V = 48 Vdc, I = 15 Adc,
DS
D
V
GS
= 10 Vdc) (Note 2)
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
V
Vdc
ns
SD
(I = 20 Adc, V = 0 Vdc) (Note 2)
−
−
1.0
0.9
1.15
−
S
GS
(I = 20 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
23
13
−
−
−
−
rr
t
(I =15 Adc, V = 0 Vdc,
a
S
GS
dl /dt = 100 A/ms) (Note 2)
S
t
10
b
Reverse Recovery Stored Charge
Q
0.017
mC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
†
Device
Package
Shipping
NTD20N03L27
DPAK
75 Units/Rail
75 Units/Rail
NTD20N03L27G
DPAK
(Pb−Free)
NTD20N03L27−1
NTD20N03L27−1G
DPAK−3
75 Units/Rail
75 Units/Rail
DPAK
(Pb−Free)
NTD20N03L27T4
NTD20N03L27T4G
DPAK
2500 Tape & Reel
2500 Tape & Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD20N03L27
40
35
30
40
V
> = 10 V
V
= 10 V
DS
GS
36
32
28
24
20
16
V
= 4 V
GS
V
GS
= 8 V
V
= 4.5 V
GS
V
V
= 5 V
GS
25
20
15
10
T = 100°C
J
V
= 3.5 V
GS
= 6 V
GS
T = 25°C
J
T = −55°C
J
V
GS
= 3 V
12
8
T = 25°C
J
V
= 2.5 V
5
0
GS
4
0
0.5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
1
1.5
2
2.5
3
3.5
4
4.5
5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.03
0.025
0.02
V
= 5 V
T = 25°C
GS
J
T = 100°C
J
V
V
= 5 V
GS
T = 25°C
J
T = −55°C
J
= 10 V
GS
0.015
0.01
2
5
8
12 15 18 22 25 28 32 35 38
I , DRAIN CURRENT (AMPS)
0
4
8
12 16 20 24 28 32 36 40
I , DRAIN CURRENT (AMPS)
D
D
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.4
1.2
1
1000
100
I
V
= 10 A
V
= 0 V
D
GS
= 5 V
GS
T = 125°C
J
T = 100°C
J
10
1
0.8
0.6
−50
−25
0
25
50
75
100 125
150
0
3
6
9
12 15 18 21 24
27 30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTD20N03L27
2500
200
1500
1000
500
0
12
10
8
V
− V
DS
GS
Q
V
GS
6
C
C
iss
Q
Q
2
1
4
2
oss
I
= 20 A
D
C
rss
T = 25°C
J
0
10 8
6
4
2
0
2
4
6
8 10 12 14 16 18 20 23 25
0
2
4
6
8
10
12
14
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
20
18
16
14
12
V
= 0 V
GS
T = 25°C
J
t
r
100
10
1
t
f
10
8
t
d(off)
t
d(on)
6
V
= 20 V
= 20 A
= 5.0 V
DS
4
I
D
V
GS
2
T = 25°C
J
0
1
10
R , GATE RESISTANCE (W)
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
350
300
250
200
150
100
50
I
D
= 24 A
0
25
50
75
100
125
150
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD20N03L27
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
STYLE 2:
PIN 1. GATE
2. DRAIN
G
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NTD20N03L27
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
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NTD20N03L27/D
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